IXYS DSEI60-10A

Fast Recovery
Epitaxial Diode (FRED)
VRSM
V
1000
VRRM
DSEI 60 IFAVM = 60 A
VRRM = 1000 V
= 35 ns
trr
C
A
Type
TO-247 AD
V
1000
DSEI 60-10A
C
C
A
Symbol
Test Conditions
I FRMS
I FAVM ¬
I FRM
TVJ = TVJM
TC = 60°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
100
60
800
A
A
A
I FSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
540
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
450
480
A
A
1250
1200
A2s
A2s
1000
950
2
As
A2s
-40...+150
150
-40...+150
°C
°C
°C
189
W
∫ i2 dt
TVJ = 45°C
Maximum Ratings
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A = Anode, C = Cathode
Features
l
l
l
l
l
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Weight
6
Nm/lb.in.
Nm/lb.in.
l
l
Applications
l
g
l
l
Symbol
Test Conditions
Characteristic Values
typ.
max.
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
3
0.5
14
mA
mA
mA
VF
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
1.8
2.3
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.43
6.1
V
mΩ
0.66
35
K/W
K/W
K/W
l
l
RthJC
RthCK
RthJA
0.2
l
l
l
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C
35
50
ns
I RM
VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs
L ≤ 0.05 µH; TVJ = 100°C
32
36
A
¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to DIN/IEC 747
IXYS reserves the right to change limits, test conditions and dimensions
© 1997 IXYS All rights reserved
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
l
l
l
t rr
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meet UL 94V-0
l
l
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
96504A
27
DSEI 60, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF /dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus
-diF/dt.
Dimensions
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Fig. 7 Transient thermal impedance junction to case.
28
© 1997 IXYS All rights reserved