LED - Chip ELC-875-19-20 25.02.2008 rev. 08 Radiation Type Technology Electrodes Infrared Point Source AlGaAs/GaAs P (anode) up typ. dimensions (µm) 360 310 typ. thickness 300 (± 20) µm 210 anode gold alloy, 1.5 µm cathode gold alloy, 0.5 µm +7 Ø50 -2 PS-11 Maximum Ratings Tamb = 25°C, unless otherwise specified Test Parameter conditions Forward current (DC) Peak forward current tP ≤ 50 µs, tP/T = 1/2 Symbol Min Typ Max Unit IF 50 mA IFM 100 mA Typ Max Unit VF 1.4 1.8 V 1.5 Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions IF = 20 mA Forward voltage Symbol Min Forward voltage IF = 50 mA VF Reverse voltage IR = 10 µA VR 5 Radiant power* IF = 20 mA Φe 0.4 Radiant power* IF = 50 mA Φe Peak wavelength IF = 20 mA λp Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 40 nm Switching time IF = 20 mA tr , tf 16 ns 865 V V 0.6 mW 1.9 mW 875 885 nm *Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Φe(typ) [mW] VF(typ) [V] Quantity ELС-875-19-20 Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545