IXYS IXTT1N100

Advance Technical Information
High Voltage MOSFET
IXTH 1N100
IXTT 1N100
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
1000
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
1000
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
1.5
A
IDM
TC = 25°C, pulse width limited by TJM
6
A
Maximum Ratings
1.5
A
IAR
EAR
TC = 25°C
6
mJ
EAS
TC = 25°C
200
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 18 Ω
PD
TC = 25°C
3
V/ns
60
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Mounting torque (TO-247)
Weight
1.13/10 Nm/lb.in.
TO-268
TO-247
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
4
6
g
g
300
°C
TO-247 AD (IXTH)
D (TAB)
TO-268 Case Style
G
(TAB)
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
Ÿ International standard packages
Ÿ High voltage, Low RDS (on) HDMOSTM
process
Ÿ Rugged polysilicon gate
Ÿ Fast switching times
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 25 µA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 1.0A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
= 1000 V
= 1.5 A
= 11 Ω
RDS(on)
N-Channel Enhancement Mode
Avalanche Energy Rated
Md
VDSS
ID25
1000
2.5
TJ = 25°C
TJ = 125°C
V
4.5
V
±100
nA
25
500
µA
µA
11
Ω
cell structure
Applications
Ÿ Switch-mode
and resonant-mode
power supplies
Flyback inverters
Ÿ
Ÿ DC choppers
Ÿ High frequency
matching
Advantages
Ÿ Space savings
Ÿ High power density
98886 (1/2)
IXTH 1N100
IXTT 1N100
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 1.0A, pulse test
0.8
Ciss
Coss
1.5
S
480
pF
45
pF
15
pF
18
ns
19
ns
20
ns
18
ns
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
td(off)
RG
= 18Ω, (External)
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 1A
Qgd
23
nC
4.5
nC
14
nC
RthJC
RthCK
2.3
TO-247
Source-Drain Diode
0.25
TO-247 AD Outline
1
Test Conditions
IS
VGS = 0 V
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
K/W
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
IF = IS, -di/dt = 100 A/µs, VR = 100 V
A
6
A
1.8
V
710
2 - Drain
Tab - Drain
Dim.
K/W
1.5
3
Terminals: 1 - Gate
3 - Source
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
2
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
ns
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
L2
L3
L4
1.00
1.15
0.25 BSC
3.80
4.10
.039 .045
.010 BSC
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1