SEMICONDUCTOR KMB060N40BA TECHNICAL DATA N-Ch Trench MOSFET General Description K This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and power Supply. L A B F D P E J R FEATURES G Q H VDSS=40V, ID=60A. C Low Drain to Source ON Resistance. : RDS(ON)=8.5m (Max.) @ VGS=10V N : RDS(ON)=11m (Max.) @ VGS=4.5V O M Super High Dense Cell Design. DIM MILLIMETERS _ 0.05 A 9.95 + _ 0.1 9.2 + B 8.00 C _ 0.2 15.3 + D _ 0.2 E 4.9 + F Φ 1.5 _ 0.05 G 2.54 + _ 0.05 0.80 H + _ 0.10 J 1.27 + K 4.50 L 1.30 M 6.90 1.75 N O 4.40 _ 0.15 P 0.1 + 0.05 _ 0.1 Q 2.4 + R 2.0 MIN High Power and Current Handling Capability. MAXIMUM RATING (Ta=25 Unless otherwise Noted) CHARACTERISTIC SYMBOL N-Ch UNIT Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGSS Drain Current V DC@TC=25 (Note1) ID 60 Pulsed (Note2) IDP 100 IS 100 A EAS 153 mJ Drain to Source Diode Forward Current Single Pulsed Avalanche Energy Drain Power Dissipation 20 (Note3) @TC=25 (Note1) @Ta=25 (Note2) Maximum Junction Temperature Storage Temperature Range D2PAK Marking A 69 PD W 3.1 Tj 150 Tstg -55 150 Thermal Resistance, Junction to Case (Note1) RthJC 1.8 /W Thermal Resistance, Junction to Ambient (Note2) RthJA 40 /W KMB 060N40 BA Type Name Lot No Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″Pad of 2 oz copper. Note 3) L=42.5 H, IAS=60A, VDD=20V, VGS=10V, Starting Tj=25 PIN CONNECTION (TOP VIEW) D 2 2 1 2009. 1. 14 1 3 G S Revision No : 0 3 1/4 KMB060N40BA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 40 - - V Drain Cut-off Current IDSS VGS=0V, VDS=24V - - 1 A Gate to Source Leakage Current IGSS VGS= - - 100 nA Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 1 1.8 3 V Drain to Source Breakdown Voltage RDS(ON)* Drain to Source ON Resistance gfs* Forward Transconductance 20V, VDS=0V VGS=10V, ID=14A (Note4) - 5.7 8.5 VGS=4.5V, ID=11A (Note4) - 7.5 11 VDS=5V, ID=14A (Note4) - 58 - - 1280 - - 250 - - 125 - - 1.5 - - 25.4 - - 13.8 - - 5.7 - m S Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge VGS=10V Qg* VGS=5V Qg* VDS=20V, f=1MHz, VGS=0V f=1MHz VDS=20V, VGS=10V, ID=14A (Note4) nC Gate to Source Charge Qgs* Gate to Drain Charge Qgd* - 5.4 - Turn-On Delay Time td(on)* - 16 - - 14 - - 55 - - 14 - - 0.8 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time VDD=20V, VGS=10V ID=1A, RG=6 (Note4) tf* Turn-Off Fall Time pF ns Source to Drain Diode Ratings VSD* Source to Drain Forward Voltage Note 4) Pulse Test : Pulse width <300 2009. 1. 14 VGS=0V, IS=14A (Note4) V , Duty cycle < 2% Revision No : 0 2/4 Fig1. ID - VDS 100 Drain Current ID (A) 4.5V VGS=10, 5V 80 4.0V 60 40 3.5V 20 3.0V 0 0 1 2 3 4 Drain to Source On Resistance RDS(ON) (mΩ) KMB060N40BA Fig2. RDS(ON)-ID 20 16 12 VGS=4.5V 8 VGS=10V 4 0 0 20 40 Drain to Source Voltage VDS (V) Normalized On-Resistance RDS(ON) 60 Tj=-55 C Tj=25 C Tj=125 C 0 2 Normalized Gate to Source Threshold Voltage 1 1.6 3 4 1.8 1.6 VGS=10V,ID=14A 1.4 VGS=4.5V,ID=11A 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 175 Gate to Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig6. RDS(on) - VGS VGS=VDS, ID=250µA 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) 2009. 1. 14 5 Revision No : 0 Drain to Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 80 20 100 Fig4. RDS(on) - Tj VDS=5V 40 80 Drain Current ID (A) Fig3. ID - VGS 100 60 25 ID=7A 20 15 10 Tj=125 C Tj=25 C 5 2 4 6 8 10 Gate to Source Volatage VGS (V) 3/4 KMB060N40BA Fig 8. C - VDS Fig7. ID - VSD 103 2000 102 Tj=-55 C Tj=125 C 101 Capacitance (pF) Drain Current ID (A) f=1MHz 100 Tj=25 C 1500 Ciss 1000 500 10-1 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 Drain to Source Voltage VDS (V) Source to Drain Forward Voltage VSD (V) Fig9. Safe Operation Area 103 Drain Current ID (A) RDS(ON) Limited 102 100us 101 1ms 10ms DC 100 VGS= 10V SINGLE PULSE Tc= 25 C 10-1 10-1 100 101 102 Drain to Source Voltage VDS (V) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 1 10 0 10 D = 0.5 0.2 0.1 10 PDM t1 SINGLE t2 - Duty = t/T Tj(max) - Tc - RthJC = PD -2 10 2009. 1. 14 0.05 0.02 0.01 -1 -4 10 -3 10 Revision No : 0 10 -2 -1 10 1 1 10 4/4