DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES • Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 730 pF (TYP.) • Built-in gate protection diode PART NUMBER PACKAGE 2SK3366 TO-251 2SK3366-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) ID(DC) ±20 A ID(pulse) ±80 A Total Power Dissipation (TC = 25 °C) PT 30 W Total Power Dissipation (TA = 25 °C) PT 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (Pulse) Note Note PW ≤ 10 µs, Duty cycle ≤ 1 % THERMAL RESISTANCE Channel to case Channel to ambient Rth(ch-C) Rth(ch-A) 4.17 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14256EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan © 1999 2SK3366 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 10 A 17.2 21 mΩ RDS(on)2 VGS = 4.5 V, ID = 10 A 26 33 mΩ RDS(on)3 VGS = 4.0 V, ID = 10 A 33 43 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 10 A 5 10 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz Output Capacitance Gate to Source Cut-off Voltage S 730 pF Coss 250 pF Reverse Transfer Capacitance Crss 120 pF Turn-on Delay Time td(on) ID = 10 A, VGS(on) = 10 V, VDD = 15 V, 28 ns RG = 10 Ω 420 ns td(off) 47 ns tf 64 ns 15 nC Rise Time tr Turn-off Delay Time Fall Time Total Gate Charge QG Gate to Source Charge QGS 2.8 nC Gate to Drain Charge QGD 4.1 nC Body Diode forward Voltage ID = 20 A, VDD = 24 V, VGS = 10 V VF(S-D) IF = 20 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 30 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 26 nC TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Ω Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 0 10 % 10 % tr td (on) ton td (off) tf toff Data Sheet D14256EJ1V0DS00 50 Ω RL VDD 2SK3366 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 35 100 80 60 40 20 0 20 40 60 80 30 25 20 15 10 5 0 100 120 140 160 20 S( ID - Drain Current - A =1 00 1m s Po 10 10 we rD ipa µs ms iss tio nL im ite d 1.0 0.1 100 120 140 160 Pulsed VGS =10 V PW RD t VG (a ID(DC) =20 A 80 80 ID(PULSE) = 80 A d ite m V) 0 =1 S Li ID - Drain Current - A ) on 60 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 40 TC - Case Temperature - ˚C TC - Case Temperature - ˚C 60 4.5 V 40 20 4.0 V TC = 25˚C Single Pulse 1.0 10 100 0 1 2 3 4 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 10 1 Pulsed TA = 150˚C 75˚C 25˚C −25˚C −50˚C 0.1 0.01 0.001 0 1 2 3 4 5 6 VGS - Gate to Source Voltage - V Data Sheet D14256EJ1V0DS00 3 2SK3366 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 4.17 ˚C/W 1 Single Pulse 0.1 100µ 1m 10 m 100 m 1 10 100 1000 | yfs | - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed Tch = −50˚C −25˚C 25˚C 10 75˚C 150˚C 1 0.1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 Pulsed VGS = 4.0 V 80 4.5 V 60 40 10 V 20 0 0.1 1 10 100 VGS(off) - Gate to Source Cut-off Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 Pulsed 40 30 ID = 10 A 20 10 0 5 15 GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 VDS = 10 V ID = 1 mA 2.5 2 1.5 1 0.5 0 − 50 0 50 100 150 Tch - Channel Temperature - ˚C ID - Drain Current - A 4 10 VGS - Gate to Source Voltage - V Data Sheet D14256EJ1V0DS00 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 50 VGS = 10 V VGS = 4.0 V 40 ISD - Diode Forward Current - A 4.5 V 30 10 V 20 10 0 4.5 V 10 0V 1 0.1 Pulsed ID = 10 A − 50 0 50 100 0 150 0.4 0.8 1.0 1.2 1.4 1.6 Tch - Channel Temperature - ˚C SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 Ciss Coss 100 10 0.01 Crss 0.1 1 10 10000 td(on), tr, td(off), tf - Switching Time - ns 10000 tr 1000 tf td(on) td(off) 100 10 VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 100 1 10 ID - Drain Current - A VDS - Drain to Source Voltage - V 1000 di/dt = 100 A/µs VGS = 0 V 100 10 1 0.1 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT trr - Reverse Recovery Time - ns 0.6 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF 0.2 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 20 A 14 30 20 12 10 VDD = 24 V 15 V 6V 8 VGS 6 4 10 2 VDS 0 IF - Diode Current - A 5 10 15 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3366 0 QG - Gate Charge - nC Data Sheet D14256EJ1V0DS00 5 2SK3366 PACKAGE DRAWINGS (Unit : mm) 1) TO-251 (MP-3) 2) TO-252 (MP-3Z) 1.1±0.2 +0.2 +0.2 0.5-0.1 0.5-0.1 0.75 2.3 2.3 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 +0.2 2.3±0.2 1.0 MIN. 1.8 TYP. 0.5±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1±0.2 1.5-0.1 +0.2 13.7 MIN. 3 7.0 MAX. 2 5.5±0.2 1.6±0.2 1 4 5.5±0.2 10.0 MAX. 6.5±0.2 5.0±0.2 0.5±0.1 4 2.0 MIN. 5.0±0.2 2.3±0.2 1.5-0.1 6.5±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Remark Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14256EJ1V0DS00 2SK3366 [MEMO] Data Sheet D14256EJ1V0DS00 7 2SK3366 [MEMO] • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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