STSA851 ® LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA ■ ■ ■ Ordering Code Marking STSA851 SA851 STSA851-AP SA851 Package / Shipment TO-92 / Bulk TO-92 / Ammopack VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED APPLICATIONS: EMERGENCY LIGHTING ■ VOLTAGE REGULATORS ■ RELAY DRIVERS ■ HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS ■ DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. TO-92 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) V CEO Collector-Emitter Voltage (I B = 0) V EBO IC I CM IB Unit 150 V 60 V Emitter-Base Voltage (I C = 0) 7 V Collector Current 5 A Collector Peak Current (t p < 5 ms) Base Current P tot Total Dissipation at T amb = 25 o C T stg Storage Temperature Tj Value Max. Operating Junction Temperature September 2003 15 A 1 A 1.1 W -65 to 150 o C 150 o C 1/8 STSA851 THERMAL DATA R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max o 114 83.3 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = 120 V V CB = 120 V I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V Min. Typ. T j = 100 o C Max. Unit 50 1 nA µA 10 nA V (BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) I C = 100 µA 150 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA 60 V V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) I E = 100 µA 7 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage V BE(on) ∗ h FE ∗ fT C CBO t ON ts tf I B = 5 mA I B = 50 mA I B = 50 mA I B = 200 mA 10 70 140 320 50 120 200 450 mV mV mV mV IC = 4 A I B = 200 mA 1 1.15 V Base-Emitter On Voltage IC = 4 A V CE = 1 V 0.89 1 V DC Current Gain IC IC IC IC V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V = = = = = = = = 10 mA 2A 5A 10 A Transition frequency V CE = 10 V I C = 100 mA Collector-Base Capacitance V CB = 10 V IC = 1 A I B1 = - I B2 = 0.1 A RESISTIVE LOAD Turn- on Time Storage Time Fall Time ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/8 100 mA 1A 2A 5A 150 150 90 30 300 270 140 50 350 130 MHz f = 1 MHz 47 pF V CC = 10 V 50 1.35 120 ns µs ns STSA851 Derating Curve DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage 3/8 STSA851 Switching Times Resistive Load Switching Times Resistive Load Switching Times Resistive Load Switching Times Inductive Load Switching Times Inductive Load 4/8 STSA851 Figure 1: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/8 STSA851 TO-92 MECHANICAL DATA mm DIM. MIN. 6/8 TYP. inch MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree STSA851 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. mm TYP. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.00 6.00 9.00 18.50 15.50 16.00 3.80 4.00 3.00 -1.00 12.70 6.35 2.54 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 MIN. inch TYP. 0.492 0.222 0.096 -0.079 0.689 0.224 0.335 0.709 0.236 0.354 0.728 0.610 0.630 0.150 0.157 0.118 -0.039 0.500 0.250 0.100 MAX. 0.189 0.150 0.063 0.091 0.019 0.508 0.278 0.116 0.079 0.748 0.248 0.364 0.020 0.807 0.650 0.984 0.165 0.035 0.433 0.039 7/8 STSA851 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8