STMICROELECTRONICS STTH806TTI

STTH806TTI
®
TURBOSWITCH Tandem 600V ULTRA-FAST BOOST DIODE
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
8A
VRRM
600 V (in series)
Tj (max)
150 °C
VF (max)
2.6 V
IRM (typ.)
4A
1
2
3
1
2
3
Insulated TO-220AB
FEATURES AND BENEFITS
DESCRIPTION
The TURBOSWITCH "H" is an ultra high
performance diode composed of two 300V dice
in series. TURBOSWITCH "H" family drastically
cuts losses in the associated MOSFET when run at
high dIF/dt.
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS.
DESIGNED FOR HIGH DI/DT OPERATION.
ULTRA-FAST RECOVERY CURRENT TO
COMPETE WITH GaAs DEVICES. SIZE
DIMINUTION OF MOSFET AND HEATSINKS
ALLOWED.
INTERNAL CERAMIC INSULATED PACKAGE
ALLOWS FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT VOLTAGE BALANCE
NETWORK.
INSULATED VERSION: :
Insulated voltage = 2500 V(RMS)
Capacitance = 7 pF
ABSOLUTE RATINGS (limiting values for both diodes in series)
Symbol
VRRM
IF(RMS)
Parameter
Repetitive peak reverse voltage
RMS forward current
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
tp = 10 ms sinusoidal
Maximum operating junction temperature
Value
600
Unit
V
14
A
80
A
-65 +150
°C
+ 150
°C
TM: TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 3A
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STTH806TTI
THERMAL AND POWER DATA
Symbol
Parameter
Test conditions
Value
Unit
Rth (j-c)
Junction to case thermal resistance
Per diode
5
°C/W
Coupling
0.2
Junction to case thermal resistance
Total
2.6
Conduction power dissipation for
both diodes
IF(AV) = 8 A δ = 0.5
Tc = 80°C
27
Rth (c)
Rth (j-c)
P1
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
IR *
VF **
Parameter
Tests Conditions
Reverse leakage
current
VR = VRRM
Forward voltage drop
IF = 8 A
Min.
Typ.
Tj = 25°C
15
Tj = 125°C
Max.
Unit
10
µA
100
3.6
Tj = 25°C
Tj = 125°C
2.1
2.6
Typ.
Max.
V
Pulse test : * tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x IF(AV) + 0.1 IF2(RMS)
RECOVERY CHARACTERISTICS
Symbol
trr
Tests Conditions
IF = 0.5 A
IF = 1 A
IRM
Irr = 0.25 A
dIF/dt = - 50 A/µs
IR = 1 A
Min.
13
Tj = 25°C
ns
30
VR = 30 V
VR = 400 V IF = 8 A dIF/dt = -200 A/µs
Unit
4
Tj = 125°C
Sfactor
5.5
0.4
A
-
TURN-ON SWITCHING CHARACTERISTICS
Symbol
2/5
Tests Conditions
Min.
Typ.
Max.
Unit
tfr
IF = 8 A dIF/dt = 100 A/µs,
measured at 1.1 x VF max
Tj = 25°C
200
ns
VFP
IF = 8 A dIF/dt = 100 A/µs
Tj = 25°C
7
V
STTH806TTI
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
P1(W)
30
δ = 0.2
δ = 0.1
δ = 0.05
25
100
δ = 0.5
Tj=125°C
Maximum values
δ=1
20
Tj=125°C
Typical values
10
T
5
δ=tp/T
IF(av) (A)
0
Tj=25°C
Maximum values
10
15
0
1
2
3
4
5
6
7
VFM(V)
tp
8
9
1
10
Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.
0
1
2
Zth(j-c)/Rth(j-c)
0.8
8
VR=400V
Tj=125°C
δ = 0.5
7
8
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
4
δ = 0.1
T
2
Single pulse
0.0
1E-3
6
6
δ = 0.2
0.2
5
IRM(A)
10
0.4
4
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
1.0
0.6
3
tp(s)
1E-2
δ=tp/T
1E-1
dIF/dt(A/µs)
tp
1E+0
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
0
0
50
100 150 200 250 300 350 400 450 500
Fig. 6: Reverse charges versus dIF/dt (90%
confidence).
140
Qrr(nC)
80
VR=400V
Tj=125°C
70
120
VR=400V
Tj=125°C
IF=2*IF(av)
100
60
50
IF=IF(av)
IF=2*IF(av)
80
40
IF=IF(av)
IF=0.5*IF(av)
60
30
40
20
IF=0.5*IF(av)
10
0
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
0
0
50
100 150 200 250 300 350 400 450 500
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STTH806TTI
Fig. 7:
values).
Softness factor versus dIF/dt (typical
S factor
0.6
0.5
0.4
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
0
50
IF<2xIF(av)
VR=400V
Tj=125°C
100 150 200 250 300 350 400 450 500
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
IRM
Tj(°C)
50
75
100
125
Fig. 10: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
VFP(V)
20
18
16
14
12
10
8
6
4
2
0
S factor
300
IF=IF(av)
Tj=125°C
VFR=1.1*VF max.
IF=IF(av)
Tj=125°C
250
200
150
100
dIF/dt(A/µs)
0
4/5
50
100 150 200 250 300 350 400 450 500
50
0
dIF/dt(A/µs)
0
50
100 150 200 250 300 350 400 450 500
STTH806TTI
PACKAGE MECHANICAL DATA
TO-220AB
B
C
DIMENSIONS
b2
REF.
L
F
I
A
l4
c2
a1
l3
l2
a2
b1
M
c1
e
A
a1
a2
B
b1
b2
C
c1
c2
e
F
I
I4
L
l2
l3
M
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
15.20
15.90 0.598
0.625
3.50
4.20 0.137
0.165
13.00
14.00 0.511
0.551
10.00
10.40 0.393
0.409
0.61
0.88 0.024
0.034
1.23
1.32 0.048
0.051
4.40
4.60 0.173
0.181
0.49
0.70 0.019
0.027
2.40
2.72 0.094
0.107
2.40
2.70 0.094
0.106
6.20
6.60 0.244
0.259
3.75
3.85 0.147
0.151
16.40
0.646
2.65
2.95 0.104
0.116
1.14
1.70 0.044
0.066
1.14
1.70 0.044
0.066
2.60
0.102
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH806TTI
STTH806TTI
TO-220AB
2.3 g.
50
Tube
Cooling method: C
Recommended torque value: 0.8 N.m.
Maximum torque value: 1 N.m.
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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