PANASONIC UN1211

Transistors with built-in Resistor
UNR121x Series (UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
(1.0)
4.1±0.2
2.0±0.2
2.4±0.2
(0.85)
0.45±0.05
0.55±0.1
(R1)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R2)

10 kΩ
22 kΩ
47 kΩ
47 kΩ



5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
3
2
(2.5)
1.25±0.05
(UN1210)
(UN1211)
(UN1212)
(UN1213)
(UN1214)
(UN1215)
(UN1216)
(UN1217)
(UN1218)
(UN1219)
(UN121D)
(UN121E)
(UN121F)
(UN121K)
(UN121L)
4.5±0.1
R 0.9
R 0.7
■ Resistance by Part Number
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
UNR121D
UNR121E
UNR121F
UNR121K
UNR121L
3.5±0.1
(0.4)
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
(1.0)
(1.5)
1.0±0.1
■ Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
2.5±0.1
6.9±0.1
(1.5)
1
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R1
B
C
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00003BED
1
UNR121x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base
IEBO
VEB = 6 V, IC = 0
0.5
mA
UNR1211
Conditions
Min
Typ
Max
V
V
cutoff current UNR1212/1214/121D/121E
0.2
(Collector open) UNR1213
0.1
UNR1210/1215/1216/1217
0.01
UNR121F/121K
1.0
UNR1219
1.5
UNR1218/121L
2.0
Forward current UNR1211
transfer ratio
VCE = 10 V, IC = 5 mA
hFE
UNR1212/121E
Unit
µA

35
60
UNR1213/1214
80
UNR1210 */1215 */1216 */
1217 *
160
UNR1219/121D/121F
30
UNR1218/121K/121L
Collector-emitter saturation voltage
460
20
VCE(sat)
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
UNR1213/121K
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
UNR121D
VCC = 5 V, VB = 10 V, RL = 1 kΩ
0.25
4.9
V
V
0.2
V
VCC = 5 V, VB = 6 V, RL = 1 kΩ
UNR121E
Transition frequency
fT
Input resistance UNR1211/1214/1215/121K
R1
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
−30%
UNR1212/1217
10
MHz
+30%
kΩ

22
UNR1210/1213/121D/121E
47
UNR1216/121F/121L
4.7
UNR1218
0.51
UNR1219
1
Resistance ratio UNR1211/1212/1213/121L
0.8
1.0
1.2
UNR1214
R1/R2
0.17
0.21
0.25
UNR1218/1219
0.08
0.1
0.12
UNR121D
4.7
UNR121E
2.14
UNR121F
0.47
UNR121K
2.13
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
2
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
SJH00003BED
UNR121x Series
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
500
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics charts of UNR1210
Ta = 25°C
Collector current IC (mA)
50
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
12
IC / IB = 10
1
Ta = 75°C
25°C
0.1
Ta = 75°C
25°C
200
−25°C
100
0
0.01
0.1
1
10
100
1
IO  VIN
104
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
300
−25°C
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
100
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00003BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
3
UNR121x Series
Characteristics charts of UNR1211
VCE(sat)  IC
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
0.3 mA
80
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
1
25°C
−25˚C
0.01
0.1
1
10
300
200
25°C
−25°C
100
0
100
Ta = 75°C
1
Collector current IC (mA)
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
0.1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
1
0.4
100
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1212
VCE(sat)  IC
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
4
100
hFE  IC
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
0.1
1
10
Collector current IC (mA)
SJH00003BED
100
400
VCE = 10 V
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
120
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
300
Ta = 75°C
200
25°C
−25°C
100
0
1
10
100
Collector current IC (mA)
1 000
UNR121x Series
IO  VIN
4
3
2
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
0.1
1
10
1
0.4
100
0.6
0.8
1.0
1.2
0.01
1.4
0.1
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
10
100
Output current IO (mA)
Characteristics charts of UNR1213
VCE(sat)  IC
Collector current IC (mA)
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
1
−25°C
0.01
0.1
1
10
25°C
−25°C
200
100
0
100
Ta = 75°C
300
1
Collector current IC (mA)
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
25°C
0.1
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00003BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
5
UNR121x Series
Characteristics charts of UNR1214
VCE(sat)  IC
Collector current IC (mA)
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
1
10
Ta = 75°C
200
25°C
−25°C
100
0
100
1
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
300
Collector current IC (mA)
Cob  VCB
5
VCE = 10 V
−25°C
0.01
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
1
0.4
100
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1215
VCE(sat)  IC
Collector current IC (mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
6
100
hFE  IC
400
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
0.01
0.1
1
10
Collector current IC (mA)
SJH00003BED
100
0
1
10
100
Collector current IC (mA)
1 000
UNR121x Series
IO  VIN
4
3
2
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
1
0.4
100
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1216
VCE(sat)  IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
25°C
−25°C
200
100
10
100
1
IO  VIN
104
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 75°C
300
0
1
Cob  VCB
5
VCE = 10 V
−25°C
0.01
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
160
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00003BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
7
UNR121x Series
Characteristics charts of UNR1217
80
0.4 mA
0.3 mA
0.2 mA
60
40
20
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
1
Ta = 75°C
25°C
0.1
200
Ta = 75°C
25°C
−25°C
100
0.01
0.1
1
10
0
100
1
Collector current IC (mA)
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
300
−25°C
Cob  VCB
5
VCE = 10 V
10
Collector-emitter voltage VCE (V)
6
hFE  IC
400
Forward current transfer ratio hFE
T = 25°C
a
IB =1 .0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
100
Collector current IC (mA)
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
120
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
1
0.4
100
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1218
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
160
120
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0
0.1 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
8
100
hFE  IC
160
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
VCE = 10 V
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
0.01
0.1
0
1
10
Collector current IC (mA)
SJH00003BED
100
1
10
100
Collector current IC (mA)
1 000
UNR121x Series
IO  VIN
4
3
2
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN  IO
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
1
0.4
100
Collector-base voltage VCB (V)
0.6
0.8
1.0
1.2
0.01
0.1
1.4
1
10
100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR1219
VCE(sat)  IC
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
0.5 mA
0.4 mA
0.3 mA
80
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
100
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
Ta = 75°C
80
25°C
−25°C
40
10
100
1
IO  VIN
104
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
120
0
1
Cob  VCB
5
VCE = 10 V
−25°C
0.01
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00003BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
9
UNR121x Series
Characteristics charts of UNR121D
VCE(sat)  IC
20
15
0.2 mA
0.1 mA
10
5
0
0
2
4
6
8
10
12
100
IC / IB = 10
10
1
−25°C
0.01
0.1
1
120
80
40
1
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
10
Collector current IC (mA)
IO  VIN
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 75°C
25°C
−25°C
0
100
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
10
VCE = 10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
25°C
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
160
Forward current transfer ratio hFE
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA 0.5 mA
0.7 mA
0.4 mA
25
0.6 mA
0.3 mA
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
30
102
10
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
0.1
1
10
1
1.5
100
Collector-base voltage VCB (V)
2.0
2.5
3.0
3.5
0.01
0.1
4.0
Input voltage VIN (V)
1
10
100
Output current IO (mA)
Characteristics charts of UNR121E
VCE(sat)  IC
Collector current IC (mA)
50
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
30
20
10
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
10
100
hFE  IC
160
IC / IB = 10
10
1
VCE = 10 V
Forward current transfer ratio hFE
IB = 1.0 mA 0.7 mA
Ta = 25°C
0.9 mA
0.6 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
60
Ta = 75°C
25°C
0.1
Ta = 75°C
120
25°C
−25°C
80
40
−25°C
0.01
0.1
1
10
Collector current IC (mA)
SJH00003BED
100
0
1
10
100
Collector current IC (mA)
1 000
UNR121x Series
IO  VIN
104
5
4
3
2
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1MHz
IE = 0
Ta = 25°C
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
102
10
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
0.1
1
10
1
1.5
100
2.0
2.5
3.0
3.5
0.01
0.1
4.0
Input voltage VIN (V)
Collector-base voltage VCB (V)
1
10
100
Output current IO (mA)
Characteristics charts of UNR121F
VCE(sat)  IC
Collector current IC (mA)
200
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
IB = 1.0 mA
0.5 mA
80
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
100
10
Ta = 75°C
1
25°C
0.1
1
10
Ta = 75°C
80
25°C
−25°C
40
0
100
1
4
3
2
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
10
Collector current IC (mA)
IO  VIN
104
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
120
Collector current IC (mA)
Cob  VCB
5
VCE = 10 V
−25°C
0.01
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
160
IC / IB = 10
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00003BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
11
UNR121x Series
Characteristics charts of UNR121K
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.2 mA
120
1.0 mA
0.8 mA
80
0.6 mA
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
100
IC / IB = 10
10
1
25°C
−25°C
0.01
12
1
100
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
1 000
1
10
100
1 000
Collector current IC (mA)
VIN  IO
100
f = 1 MHz
IE = 0
Ta = 25°C
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
10
VCE = 10 V
Collector current IC (mA)
Cob  VCB
5
Ta = 75°C
0.1
Collector-emitter voltage VCE (V)
6
hFE  IC
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
10
1
0.01
0.1
100
1
10
100
Output current IO (mA)
Collector-base voltage VCB (V)
Characteristics charts of UNR121L
VCE(sat)  IC
Collector current IC (mA)
200
160
IB = 1.0 mA
0.8 mA
120
0.6 mA
80
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
12
100
hFE  IC
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
−25°C
0.01
240
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
240
200
10
100
Collector current IC (mA)
SJH00003BED
1 000
Ta = 75°C
160
25°C
120
−25°C
80
40
0
1
VCE = 10 V
1
10
100
Collector current IC (mA)
1 000
UNR121x Series
VIN  IO
100
f = 1 MHz
IE = 0
Ta = 25°C
5
Input voltage VIN (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob  VCB
6
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
1
10
Collector-base voltage VCB (V)
100
0.01
0.1
1
10
100
Output current IO (mA)
SJH00003BED
13
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP