DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low current : ICC = 15.5 mA TYP. @ VCC = 5.0 V • Medium output power : PO (sat) = +13.0 dBm TYP. @ f = 1.0 GHz : PO (sat) = +9.0 dBm TYP. @ f = 2.2 GHz • High linearity : PO (1dB) = +7.5 dBm TYP. @ f = 1.0 GHz : PO (1dB) = +5.7 dBm TYP. @ f = 2.2 GHz • Power gain : GP = 25.0 dB TYP. @ f = 1.0 GHz : GP = 26.0 dB TYP. @ f = 2.2 GHz • Noise Figure : NF = 5.3 dB TYP. @ f = 1.0 GHz : NF = 4.9 dB TYP. @ f = 2.2 GHz • Supply voltage : VCC = 4.5 to 5.5 V • Port impedance : input/output 50 Ω APPLICATIONS • IF amplifiers in LNB for DBS converters etc. ORDERING INFORMATION Part Number µPC3226TB-E3 Order Number Package µPC3226TB-E3-A 6-pin super minimold (Pb-Free) Note Marking C3N Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, please contact your nearby sales office Part number for sample order: µPC3226TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10558EJ01V0DS (1st edition) Date Published May 2005 CP(K) Printed in Japan NEC Compound Semiconductor Devices, Ltd. 2005 µPC3226TB PIN CONNECTIONS (Top View) C3N 3 (Top View) 2 1 (Bottom View) 4 3 4 4 3 5 2 5 5 2 6 1 6 6 1 Pin No. Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC PRODUCT LINE-UP OF 5 V-BIAS SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER (TA = +25°C, f = 1 GHz, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) fu PO (sat) GP NF ICC (GHz) (dBm) (dB) (dB) (mA) µPC2708TB 2.9 +10.0 15 6.5 26 µPC2709TB 2.3 +11.5 23 5.0 25 C1E µPC2710TB 1.0 +13.5 33 3.5 22 C1F µPC2776TB 2.7 +8.5 23 6.0 25 C2L µPC3223TB 3.2 +12.0 23 4.5 19 C3J 24.5 C3M 15.5 C3N Part No. µPC3225TB 2.8 µPC3226TB 3.2 +15.5 Note +13.0 32.5 Note 25 3.7 Note 5.3 Package 6-pin super minimold Note µPC3225TB is f = 0.95 GHz Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. 2 Data Sheet PU10558EJ01V0DS Marking C1D µPC3226TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25°C 6.0 V Total Circuit Current ICC TA = +25°C 40 mA Power Dissipation PD TA = +85°C 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Tstg −55 to +150 °C Input Power Pin +10 dBm Note TA = +25°C Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol Conditions MIN. TYP. MAX. Unit Supply Voltage VCC 4.5 5.0 5.5 V Operating Ambient Temperature TA −40 +25 +85 °C Data Sheet PU10558EJ01V0DS 3 µPC3226TB ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Circuit Current ICC No input signal 12.5 15.5 19.5 mA Power Gain 1 GP1 f = 0.1 GHz, Pin = −30 dBm 22.0 24.0 26.0 dB Power Gain 2 GP2 f = 1.0 GHz, Pin = −30 dBm 23.0 25.0 27.5 Power Gain 3 GP3 f = 1.8 GHz, Pin = −30 dBm 23.0 26.0 29.0 Power Gain 4 GP4 f = 2.2 GHz, Pin = −30 dBm 23.0 26.0 29.0 Power Gain 5 GP5 f = 2.6 GHz, Pin = −30 dBm 22.5 25.5 29.0 Power Gain 6 GP6 f = 3.0 GHz, Pin = −30 dBm 22.0 25.0 28.5 Saturated Output Power 1 PO (sat) 1 f = 1.0 GHz, Pin = −2 dBm +10.0 +13.0 − Saturated Output Power 2 PO (sat) 2 f = 2.2 GHz, Pin = −8 dBm +6.0 +9.0 − Gain 1 dB Compression Output Power 1 PO (1 dB) 1 f = 1.0 GHz +5.0 +7.5 − Gain 1 dB Compression Output Power 2 PO (1 dB) 2 f = 2.2 GHz +3.0 +5.7 − Noise Figure 1 NF1 f = 1.0 GHz − 5.3 6.0 Noise Figure 2 NF2 f = 2.2 GHz − 4.9 6.0 Isolation 1 ISL1 f = 1.0 GHz, Pin = −30 dBm 31 34 − Isolation 2 ISL2 f = 2.2 GHz, Pin = −30 dBm 33 36 − Input Return Loss 1 RLin1 f = 1.0 GHz, Pin = −30 dBm 10.0 14.0 − Input Return Loss 2 RLin2 f = 2.2 GHz, Pin = −30 dBm 9.0 13.0 − Output Return Loss 1 RLout1 f = 1.0 GHz, Pin = −30 dBm 10.0 13.0 − Output Return Loss 2 RLout2 f = 2.2 GHz, Pin = −30 dBm 10.0 13.0 − Input 3rd Order Distortion Intercept Point 1 IIP31 − −5.0 − − −11.0 − − +20.0 − − +15.0 − − 43.0 − dBc f1 = 1 000 MHz, f2 = 1 001 MHz, dBm dBm dB dB dB dB dBm Pin = −30 dBm Input 3rd Order Distortion Intercept Point 2 IIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm Output 3rd Order Distortion Intercept Point 1 OIP31 f1 = 1 000 MHz, f2 = 1 001 MHz, dBm Pin = −30 dBm Output 3rd Order Distortion Intercept Point 2 OIP32 f1 = 2 200 MHz, f2 = 2 201 MHz, Pin = −30 dBm 2nd Order Intermodulation Distortion IM2 f1 = 1 000 MHz, f2 = 1 001 MHz, Pin = −30 dBm K factor 1 K1 f = 1.0 GHz − 1.4 − − K factor 2 K2 f = 2.2 GHz − 1.6 − − 4 Data Sheet PU10558EJ01V0DS µPC3226TB TEST CIRCUIT VCC C4 1 000 pF 1 000 pF C3 L 100 nH 6 50 Ω IN C1 C2 4 1 50 Ω OUT 100 pF 100 pF 2, 3, 5 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS Type Value C1, C2 Chip Capacitor 100 pF C3 Chip Capacitor 1 000 pF C4 Feed-through Capacitor 1 000 pF Chip Inductor 100 nH L INDUCTOR FOR THE OUTPUT PIN The internal output transistor of this IC, to output medium power. To supply current for output transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select inductance, as the value listed above. The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum voltage drop to output enable high level. In terms of AC, the inductor makes output-port impedance higher to get enough gain. In this case, large inductance and Q is suitable. CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitances are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, C = 1/(2 πRfc). Data Sheet PU10558EJ01V0DS 5 µPC3226TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN C1 C2 OUT L C3 C4 COMPONENT LIST Notes Value 1. 30 × 30 × 0.4 mm double sided copper clad polyimide board. 2. Back side: GND pattern 1 000 pF 3. Solder plated on pattern 100 nH 4. : Through holes C1, C2 100 pF C3, C4 L1 6 Data Sheet PU10558EJ01V0DS µPC3226TB TYPICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω, unless otherwise specified) CURCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE CIRCUIT CURRENT vs. SUPPLY VOLTAGE 18 No Input Signal 17 20 Circuit Current ICC (mA) Circuit Current ICC (mA) 25 TA = +85°C 15 10 +25°C 5 1 2 3 4 15 14 13 –40°C 0 16 12 –50 6 5 Supply Voltage VCC (V) –25 0 25 75 50 100 Operating Ambient Temperature TA (°C) ISOLATION vs. FREQUENCY POWER GAIN vs. FREQUENCY 0 30 VCC = 5.5 V –10 Isolation ISL (dB) Power Gain GP (dB) 25 20 4.5 V 5.0 V 15 10 0.3 0.5 1.0 2.0 –40 –60 0.1 3.0 5.0 V 0.3 0.5 5.5 V 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) INPUT RETURN LOSS vs. FREQUENCY OUTPUT RETURN LOSS vs. FREQUENCY 0 0 –5 –10 VCC = 4.5 V –15 –20 5.0 V –25 5.5 V –30 0.1 0.3 0.5 1.0 2.0 3.0 Output Return Loss RLout (dB) Input Return Loss RLin (dB) VCC = 4.5 V –30 –50 5 0 0.1 –20 –5 VCC = 4.5 V –10 –15 –20 5.0 V 5.5 V –25 –30 0.1 Frequency f (GHz) 0.3 0.5 1.0 2.0 3.0 Frequency f (GHz) Remark The graphs indicate nominal characteristics. Data Sheet PU10558EJ01V0DS 7 µPC3226TB OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) +15 OUTPUT POWER vs. INPUT POWER +20 f = 1.0 GHz VCC = 5.5 V +10 +5 5.0 V 0 4.5 V –5 –10 –15 –20 –40 f = 2.2 GHz +15 Output Power Pout (dBm) +20 VCC = 5.5 V +10 +5 0 5.0 V –5 4.5 V –10 –15 –30 –20 0 –10 +10 –20 –40 +20 –30 Input Power Pin (dBm) 7.5 7.5 VCC = 4.5 V 5.0 V 6.0 5.5 5.0 4.5 5.5 V 3.5 7.0 TA = +85°C 6.5 +25°C 6.0 5.5 5.0 4.5 500 1 000 1 500 2 000 2 500 3.5 3.0 0 –40°C 500 1 000 1 500 Frequency f (MHz) Frequency f (MHz) Remark The graphs indicate nominal characteristics. 8 +10 4.0 4.0 3.0 0 0 NOISE FIGURE vs. FREQUENCY 8.0 Noise Figure NF (dB) Noise Figure NF (dB) NOISE FIGURE vs. FREQUENCY 6.5 –10 Input Power Pin (dBm) 8.0 7.0 –20 Data Sheet PU10558EJ01V0DS 2 000 2 500 +20 +10 f1 = 1 000 MHz f2 = 1 001 MHz Pout 0 –10 IM3 –20 –30 –40 –50 –60 –70 –80 –90 –40 –30 –20 –10 0 Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER +20 +10 f1 = 2 200 MHz f2 = 2 201 MHz Pout 0 –10 –20 IM3 –30 –40 –50 –60 –70 –40 –35 –20 –25 –30 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, IM2 vs. INPUT POWER IM2 vs. INPUT POWER +20 +10 f1 = 1 000 MHz f2 = 1 001 MHz Pout 0 –10 IM2 –20 –30 –40 –50 –60 –70 –40 –30 –20 –10 0 2nd Order Intermodulation Distortion IM2 (dBc) Output Power Pout (dBm) 2nd Order Intemodulation Distortion IM2 (dBm) Output Power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) µPC3226TB –15 60 50 VCC = 5.5 V 40 30 20 5.0 V 10 4.5 V 0 –10 –40 Input Power Pin (dBm) –30 –20 –10 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10558EJ01V0DS 9 µPC3226TB S-PARAMETERS (TA = +25°C, VCC = Vout = 5.0 V, Pin = −30 dBm) S11−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 73.191 Ω − 12.578 Ω 2 : 2 200 MHz 61.383 Ω − 32.15 Ω S22−FREQUENCY START : 100.000 000 MHz STOP : 5 100.000 000 MHz 1 2 1 : 1 000 MHz 80.102 Ω − 13.164 Ω 2 : 2 200 MHz 56.375 Ω − 30.771 Ω 10 Data Sheet PU10558EJ01V0DS µPC3226TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PU10558EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 11 µPC3226TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground terminals must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC line. (4) The inductor (L) must be attached between VCC and output pins. The inductance value should be determined in accordance with desired frequency. (5) The DC cut capacitor must be attached to input and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260°C or below Time at peak temperature : 10 seconds or less IR260 WS260 Preheating temperature (package surface temperature) : 120°C or below Partial Heating Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 12 Data Sheet PU10558EJ01V0DS HS350 µPC3226TB When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. • The information in this document is current as of May, 2005. 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M8E 00. 4 - 0110 Data Sheet PU10558EJ01V0DS 13 µPC3226TB For further information, please contact NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: [email protected] (sales and general) [email protected] (technical) Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579 NEC Compound Semiconductor Devices Hong Kong Limited E-mail: [email protected] (sales, technical and general) FAX: +852-3107-7309 TEL: +852-3107-7303 Hong Kong Head Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Taipei Branch Office FAX: +82-2-558-5209 TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0504