PANASONIC XP03389

Composite Transistors
XP03389
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
(0.425)
For digital circuits
0.20±0.05
5
0.12+0.05
–0.02
4
5˚
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
0.2±0.1
1.25±0.10
2.1±0.1
■ Features
1
3
2
(0.65) (0.65)
■ Basic Part Number
1.3±0.1
2.0±0.1
• UNR2211 + UNR2118
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
IC
100
mA
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
−100
mA
Total power dissipation
PT
150
mW
Collector current
Tr2
Overall
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Publication date: June 2003
SJJ00160BED
0 to 0.1
Parameter
Tr1
0.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
0.9+0.2
–0.1
10˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SMini5-G1 Package
Marking Symbol: DX
Internal Connection
5
4
Tr1
Tr2
1
2
3
1
XP03389
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
mA
hFE
VCE = 10 V, IC = 5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
Unit
V
V
0.1
µA

35
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
Max
0.25
4.9
V
V
0.2
V
Input resistance
R1
−30%
10
+30%
kΩ
Resistance ratio
R1 / R 2
0.8
1.0
1.2

Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
−2.0
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
Min
Typ
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
Unit
V
V
µA

20
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Max
− 0.25
V
− 0.2
V
−4.9
V
Input resistance
R1
−30%
0.51
+30%
kΩ
Resistance ratio
R1 / R 2
0.08
0.10
0.12

Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT  Ta
Total power dissipation PT (mW)
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00160BED
XP03389
Characteristics charts of Tr1
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Collector current IC (mA)
120
100
0.3 mA
80
60
0.2 mA
40
20
0
0.1 mA
0
2
4
6
8
10
12
100
IC / IB = 10
10
1
25°C
0.1
Ta = 75°C
0.01
1
30
Collector-base voltage VCB (V)
−25°C
100
50
1 000
1
100
1 000
VIN  IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
104
103
102
10
0.4
10
Collector current IC (mA)
IO  VIN
f = 1 MHz
Ta = 25°C
20
25°C
150
Collector current IC (mA)
Output current IO (µA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
100
105
10
Ta = 75°C
200
0
10
1
Cob  VCB
0
VCE = 10 V
−25°C
Collector-emitter voltage VCE (V)
10
hFE  IC
250
Forward current transfer ratio hFE
Ta = 25°C
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
140
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.8
1.2
1.6
2.0
Input voltage VIN (V)
SJJ00160BED
2.4
0.01
0.1
1
10
100
Output current IO (mA)
3
XP03389
Characteristics charts of Tr2
VCE(sat)  IC
− 0.9 mA
Collector current IC (mA)
−100
− 0.8 mA
− 0.7 mA
−80
− 0.6 mA
−60
− 0.5 mA
− 0.4 mA
−40
− 0.3 mA
−20
− 0.2 mA
0
−1
0
−2
−3
−4
−5
−6
−10
IC / IB = 10
−1
Ta = 75°C
25°C
− 0.1
−25°C
− 0.01
− 0.001
−1
Collector-emitter voltage VCE (V)
−10
10
−10
−20
−30
Collector-base voltage VCB (V)
4
−25°C
80
40
0
−1
−1 000
−40
VO = − 0.2 V
Ta = 25°C
−1
0
− 0.2
− 0.4
− 0.6
− 0.8
Input voltage VIN (V)
SJJ00160BED
−100
−1 000
VIN  IO
−100
−10
− 0.1
−10
Collector current IC (mA)
Input voltage VIN (V)
Output current IO (mA)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
100
0
25°C
120
IO  VIN
−100
f = 1 MHz
Ta = 25°C
1
−100
Ta = 75°C VCE = −10 V
160
Collector current IC (mA)
Cob  VCB
1 000
hFE  IC
200
Forward current transfer ratio hFE
IB = −1.0 mA
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC  VCE
−120
−1.0
VO = −5 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
−1
−10
−100
Output current IO (mA)
−1 000
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL