IXYS 98984

Advanced Technical Information
HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFK 60N55Q2
IXFX 60N55Q2
Q-Class
=
=
=
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
60
240
60
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
75
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
20
V/ns
PD
TC = 25°C
735
W
PLUS 247TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
°C
°C
°C
-55 ... +150
150
-55 ... +150
TJ
TJM
Tstg
G
D
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
550 V
60 A
Ω
88 mΩ
°C
300
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6
10
G = Gate
S = Source
D (TAB)
S
D = Drain
TAB = Drain
g
g
Features
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
550
VGS(th)
VDS = VGS, ID = 8 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2002 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
4.5
V
±200
nA
50
2
µA
mA
88 mΩ
z
z
z
z
Double metal process for low gate
resistance
International standard packages
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS98984(12/02)
IXFK 60N55Q2
IXFX 60N55Q2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
44
S
6900
pF
1150
pF
240
pF
C rss
td(on)
22
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
14
ns
td(off)
RG = 1.0 Ω (External),
57
ns
9
ns
200
nC
48
nC
99
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.17
RthJC
RthCK
TO-264
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
0.15
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
60
A
Repetitive; pulse width limited by TJM
240
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
1
10
PLUS 247TM Outline
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
TO-264 AA Outline
Dim.
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1