SMD Type Transistors

Transistors
SMD Type
PNP Transistors
2SB736A
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
■ Features
1
0.55
● Complimentary to 2SD780A.
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● High DC current gain hFE:200(TYP)
0.4
3
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
1.Base
0-0.1
+0.1
0.38 -0.1
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Collector - Base Voltage
Parameter
VCBO
-80
Collector - Emitter Voltage
VCEO
-80
Emitter - Base Voltage
Unit
V
VEBO
-5
Collector Current - Continuous
IC
-300
mA
Collector Power Dissipation
PC
200
mW
TJ
150
Tstg
-55 to 150
Junction Temperature
Storage Temperature range
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-80
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-80
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= - 70V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -5V , IC=0
-0.1
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
(Note.1)
(Note.1)
(Note.1)
VCE(sat)
IC=-300 mA, IB=-30mA
VBE(sat)
IC=-300 mA, IB=-30mA
VBE
hFE
(Note.1)
Collector output capacitance
Cob
Transition frequency
fT
Unit
V
-0.35
-0.6
-1.2
VCE= -6V, IC= -10mA
-600
-660
-700
VCE= -1 V, IC= -50mA
110
200
400
VCE= -2V, IC= -300mA
30
uA
V
mV
VCB= -6V, IE= 0,f=1MHz
13
pF
VCE= -6V, IE = 10mA
100
MHz
Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
2SB736A-B51
2SB736A-B52
2SB736A-B53
2SB736A-B54
2SB736A-B55
Range
110-180
135-220
170-270
200-320
250-400
Marking
B51
B52
B53
B54
B55
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Transistors
SMD Type
PNP Transistors
■ Typical Characterisitics
2
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2SB736A
Transistors
SMD Type
PNP Transistors
2SB736A
■ Typical Characterisitics
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