Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 1/9 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTD7521J3 BVDSS ID RCE(SAT) 90V 10A 0.1Ω Features • High BVCEO • Very high current gain • Pb-free lead plating package Symbol Outline BTD7521J3 TO-252(DPAK) B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits 90 90 7 10 20 (Note 1) 1.75 (Note 2) 30 71.4 (Note 2) 4.2 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦300μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTD7521J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 2/9 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(sat) *hFE *hFE Cob Min. 90 90 7 1000 500 - Typ. 130 Max. 10 10 0.5 0.1 1.2 - Unit V V V μA μA V Ω V pF Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IC=100μA, IC=0 VCB=90V, IE=0 VEB=7V, IC=0 IC=5A, IB=50mA IC=5A, IB=50mA IC=5A, IB=50mA VCE=5V, IC=1A VCE=5V, IC=5A VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTD7521J3-0-T3-G BTD7521J3 Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel CYStek Product Specification Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 3/9 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 7 2 1mA 5mA 6 1.6 Collector Current---IC(A) Collector Current---IC(A) 1.8 1.4 1.2 1 500uA 400uA 300uA 0.8 0.6 0.4 200uA IB=100uA 0.2 0 5 4 2.5mA 3 2mA 1.5mA 2 1mA 1 IB=500uA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 10 14 8 6mA 6 50mA 12 10mA Collector Current---IC(A) Collector Current---IC(A) 20mA 4mA 4 IB=2mA 2 10 20mA 8 10mA 6 IB=5mA 4 2 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 10000 10000 VCE=1V 125℃ Current Gain---HFE 125℃ Current Gain---HFE 6 1000 75℃ 25℃ 100 10 VCE=2V 1000 75℃ 25℃ 100 10 BTD7521J3 100 1000 Collector Current---IC(mA) 10000 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 4/9 CYStech Electronics Corp. Current Gain vs Collector Current Current Gain vs Collector Current 10000 10000 125℃ 125℃ VCE=10V Current Gain---HFE Current Gain---HFE VCE=5V 1000 25℃ 75℃ 1000 75℃ 100 100 10 100 1000 Collector Current---IC(mA) 10 10000 100 1000 Collector Current---IC(mA) 1000 1000 VCESAT=100IB VCESAT=50IB Saturation Voltage---(mV) 125℃ 125℃ 100 75℃ 75℃ 100 25℃ 25℃ 10 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VCESAT=500IB Saturation Voltage---(mV) VCESAT=250IB Saturation Voltage---(mV) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current Saturation Voltage---(mV) 25℃ 125℃ 1000 75 ℃ 100 1000 125 75℃ 100 25℃ 25℃ 10 10 1 BTD7521J3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 5/9 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 1000 VCESAT=1000I B 125℃ Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT=666IB 75℃ 100 25℃ 75℃ 1000 100 25℃ 10 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBESAT=300IB 75℃ Saturation Voltage---(mV) VBESAT=10IB Saturation Voltage---(mV) 125℃ 25℃ 1000 125℃ 75℃ 25℃ 1000 125℃ 100 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 On Voltage vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Capacitance vs Reverse-biased Voltage 10000 10000 VCE=5 75℃ Capacitance---(pF) On Voltage---(mV) Cib 25℃ 1000 1000 Cob 100 125℃ 100 10 1 BTD7521J3 10 100 1000 Collector Current---IC(mA) 10000 0.1 1 10 Reverse-biased Voltage---VR(V) 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve Power Derating Curve 2 35 30 1.6 Power Dissipation---PD(W) Power Dissipation---PD(W) 1.8 1.4 1.2 1 0.8 0.6 0.4 25 20 15 10 5 0.2 0 0 0 BTD7521J3 50 100 150 Ambient Temperature---TA(℃) 200 0 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 7/9 Reel Dimension Carrier Tape Dimension BTD7521J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD7521J3 CYStek Product Specification Spec. No. : C615J3 Issued Date : 2009.05.08 Revised Date : 2011.10.03 Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 Device Name D7521 Date Code □□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD7521J3 CYStek Product Specification