BTC2411S3

Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 1/8
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2411S3
Description
• The BTC2411S3 is designed for general purpose amplifier applications. It is housed in the
SOT-323/SC-70 package which is designed for low power surface mount applications.
• Low VCE(sat)
• Low leakage current
• High cutoff frequency
• Complementary to BTA1036S3
• Pb-free package
Symbol
Outline
BTC2411S3
SOT-323
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation @Ta=25℃
Derate above 25℃
Operating Junction and Storage Temperature Range
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
75
50
6
600
V
V
V
mA
Pd
200
Tj; Tstg
-55~+150
(Note 1)
mW
°C
Note 1: when mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTC2411S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 2/8
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
hFE1
hFE2
hFE3
*hFE4
*hFE5
fT
Cob
Min.
75
50
6
35
50
75
100
40
-
Typ.
0.2
230
8.3
Max.
10
10
100
0.25
0.45
1.0
1.2
300
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=60V
VCE=60V,VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTC2411S3
BTC2411S3
Package
SOT-323
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
P1
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
0.15
500uA
400uA
300uA
0.1
0.05
5mA
0.6
1mA
0.2
Collector Current---IC(A)
Collector Current---IC(A)
0.25
200uA
IB=100uA
0
0.5
0.4
2.5mA
2mA
0.3
1.5mA
0.2
1mA
0.1
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
Ta=125°C
Current Gain---HFE
Current Gain---HFE
Ta=125°C
100
Ta=75°C
Ta=25°C
100
Ta=25°C
Ta=75°C
VCE=2V
VCE=1V
10
10
1
10
100
Collector Current---IC(mA)
1
1000
Current Gain vs Collector Current
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
VCESAT=10IB
Saturation Voltage---(mV)
Current Gain---HFE
6
100
Ta=25°C
Ta=75°C
100
125°C
75°C
25°C
VCE=10V
10
10
1
BTC2411S3
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 4/8
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT=38IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT=20IB
100
125°C
75°C
25°C
10
100
125°C
75°C
25°C
10
1
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
[email protected]=10V
Ta=75°C
On Voltage---(mV)
Saturation Voltage---(mV)
[email protected]=10IB
Ta=25°C
1000
75°C
25°C
1000
125°C
125°C
100
100
1
10
100
Collector Current---IC(mA)
1
1000
Capacitance vs Reverse-biased Voltage
10
100
Collector Current---IC(mA)
1000
Transition Frequency vs Collector Current
100
Transition Frequency---fT(MHz)
1000
Cib
Capacitance---(pF)
1000
10
Cob
VCE=5V
100
10
1
0.1
BTC2411S3
1
10
Reverse-biased Voltage---VR(V)
100
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 5/8
Typical Characteristics(Cont.)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
BTC2411S3
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTC2411S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2411S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C203S3-R
Issued Date : 2003.11.18
Revised Date : 2010.11.12
Page No. : 8/8
SOT-323 Dimension
Marking:
3
A
Q
A1
1
C
TE
P1
Lp
2
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
2 mm
1
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2411S3
CYStek Product Specification