STB3NC90Z N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH III MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STB3NC90 900V < 3.5Ω 3.5 A TYPICAL RDS(on) = 3.2Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 1 D2PAK DESCRIPTION The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS ■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 900 V Drain-gate Voltage (RGS = 20 kΩ) 900 V Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 3.5 A ID Drain Current (continuos) at TC = 100°C 2.2 A IDM (●) Drain Current (pulsed) 14 A PTOT Total Dissipation at TC = 25°C 100 W Derating Factor 0.8 W/°C Gate-source Current (*) ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 2.5 KV IGS VESD(G-S) dv/dt Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature 3 V/ns –65 to 150 °C 150 °C (•)Pulse width limited by safe operating area (1)ISD ≤3.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX May 2001 (*).Limited only by maximum temperature allowed 1/9 STB3NC90Z THERMAL DATA 1.25 °C/W Thermal Resistance Junction-ambient Max 62 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 3.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 220 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 900 ID = 1 mA, VGS = 0 Unit V 1 V/°C µA IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Max. Unit 1 ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.75 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 Typ. 4 5 V 3.2 3.5 Ω 3.5 A DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Min. Typ. Max. Unit 3 S 1250 pF Output Capacitance 78 pF Reverse Transfer Capacitance 7 pF Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 1.75A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Crss STB3NC90Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Gate-Drain Charge Test Conditions Min. VDD = 450 V, ID = 1.5 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 720V, I D = 3A, VGS = 10V Typ. Max. Unit 28 ns 14 ns 27 38 nC 8 nC 10 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Condit ions Min. VDD = 720V, ID = 3 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 16 ns 10 ns 18 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 3.5 A ISDM (2) Source-drain Current (pulsed) 14 A VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 3 A, di/dt = 100A/µs, VDD = 100V, T j = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 712 ns 4450 µC 13 A GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) V αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA 90 Ω Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/9 STB3NC90Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/9 Static Drain-source On Resistance STB3NC90Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB3NC90Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB3NC90Z D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB3NC90Z D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B C TAPE MECHANICAL DATA mm MIN. MAX. inch MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D D1 1.5 1.59 1.6 1.61 0.059 0.063 0.062 0.063 E F 1.65 11.4 1.85 11.6 0.065 0.073 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 P2 11.9 1.9 12.1 2.1 0.468 0.476 0.075 0.082 R T 50 0.25 1.574 0.35 0.0098 0.0137 W 23.7 24.3 DIM. * on sales type 8/9 0.933 0.956 1.5 12.8 D 20.2 G 24.4 N T 100 MAX. 330 inch MIN. MAX. 12.992 13.2 0.059 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB3NC90Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9