BSP 170 P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •dv/dt rated Type VDS ID RDS(on) BSP 170 P 60 V -1.9 A 0.3 Ω Pin 1 Pin 2/4 Pin 3 G D S Package @ VGS VGS = -10 V SOT-223 Ordering Code Q67041-S4018 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA = 25 °C -1.9 TA = 70 °C Pulsed drain current -1.5 -7.6 IDpulse Unit TA = 25 °C Avalanche energy, single pulse EAS 70 mJ ID = -1.9 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax IAR -1.9 A EAR 0.18 mJ dv/dt 6 Tjmax = 150 °C Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W TA = 25 °C Operating temperature Tj -55 ... +150 °C Storage temperature Tstg -55...+150 Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt kV/µs IS = -1.9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs, IEC climatic category; DIN IEC 68-1 Semiconductor Group 55/150/56 1 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Values Unit min. typ. max. - - tbd @ min. footprint - tbd - @ 6 cm2 cooling area1) - - 70 V(BR)DSS 60 - - VGS(th) -2.1 -3 -4 Thermal resistance, junction -soldering point (Pin 4 ) RthJS SMD version, device on PCB: RthJA K/W Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA Zero gate voltage drain current IDSS µA VDS = -60 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS - -10 -100 -100 nA VGS = -20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) - 0.175 0.3 Ω VGS = -10 V, ID = -1.9 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Values Unit min. typ. max. Transconductance gfs 1 2.5 - S VDS≥2*ID*RDS(on)max , ID = -1.9 A Input capacitance Ciss - 335 420 pF VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance Coss - 105 135 Crss - 65 85 td(on) - 14 21 tr - 30 45 td(off) - 125 190 tf - 65 100 VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Rise time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Fall time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Ω Semiconductor Group 3 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Symbol Parameter at Tj = 25 °C, unless otherwise specified Dynamic Characteristics Values Unit min. typ. max. QG(th) - 0.36 0.54 nC Gate charge at Vgs=7V Qg(7) - 7.8 11.7 nC VDD = -24 V, ID = -1.9 A, VGS = 0 to-7 V Gate charge total Qg - 10 15 V(plateau) - 3.85 - V IS - - -1.9 A ISM - - -7.6 VSD - -0.85 -1.2 V Reverse recovery time trr - 60 90 ns VR = -30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge Qrr - 100 150 nC Gate charge at threshold VDD = -48 V, ID≥− 0,1 A, VGS = 0 to - 1 V VDD = -48 V, ID = -1.9 A, VGS = 0 to -10 V Gate plateau voltage VDD = -48 V, ID = -1.9 A Reverse Diode Inverse diode continuous forward current T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VGS = 0 V, IF = -3.8 A VR = -30 V, IF=l S , di F/dt = 100 A/µs Semiconductor Group 4 07 / 1998 BSP 170 P Preliminary data Power Dissipation Drain current Ptot = f(TA) ID = f (TA) parameter:VGS≥ -10V BSP 170 P BSP 170 P 2.0 1.8 A W 1.6 Ptot 1.4 ID 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.0 0 0.2 20 40 60 80 100 120 °C 0.0 0 160 TA Semiconductor Group 20 40 60 80 100 120 °C 160 TA 5 07 / 1998 BSP 170 P Preliminary data Typ. output characteristics Drain-source on-resistance I D = f (VDS) RDS(on) = f (Tj) parameter: tp = 80 µs parameter : ID = -1.9 A, VGS = -10 V BSP 170 P -4.5 A ID BSP 170 P 0.70 Ptot = 2W Ω j l k ihg f e d VGS [V] a -3.5 b c -3.0 -2.5 b -2.0 -1.5 a 0.60 -4.0 0.55 RDS(on) -4.5 c -5.0 0.50 d -5.5 0.45 e -6.0 f -6.5 0.40 g -7.0 0.35 h -7.5 i -8.0 j -9.0 k -10.0 l -20.0 98% 0.30 0.25 typ 0.20 -1.0 0.15 0.10 -0.5 0.05 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.00 -60 -5.0 VDS Semiconductor Group -20 20 60 100 °C 160 Tj 6 07 / 1998 BSP 170 P Preliminary data Gate threshold voltage Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 µs VGS(th) = f (Tj) parameter: V GS = VDS, ID = -460 µA VDS≥ 2 x I D x R DS(on)max BSP 170 P -10 -4.6 V A -4.0 98% -3.6 VGS(th) -8 ID typ -3.2 -7 -2.8 2% -6 -2.4 -5 -2.0 -4 -1.6 -3 -1.2 -0.8 -2 -0.4 -1 0.0 -60 0 0 -1 -2 -3 -4 -5 -6 -7 V -8 -20 20 60 100 °C -10 160 150 V GS Typ. capacitances Forward characteristics of reverse diode C = f(V DS) IF = f (VSD) Parameter: V GS=0 V, f=1 MHz parameter: T , tp = 80 µs BSP 170 Pj 10 3 10 1 A pF Ciss C IF 10 0 10 2 Coss Crss 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 25 30 V 10 -2 0.0 40 - V DS Semiconductor Group 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 07 / 1998 BSP 170 P Preliminary data Avalanche Energy E AS = f (Tj) Typ. gate charge parameter: ID = -1.9 A,VDD = -25 V VGS = f (QGate) RGS = 25 Ω parameter: ID puls =-1.9A BSP 170 P 16 70 mJ V 60 EAS 55 VGS 50 45 12 10 40 8 35 0,2 VDS max 30 0,8 VDS max 6 25 20 4 15 10 2 5 0 20 40 60 80 100 120 °C Tj 0 0 150 2 4 6 8 10 14 nC QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 170 P 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 8 07 / 1998 BSP 170 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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