MMBTA06 TRANSISTOR(NPN) SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 4 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Test Collector-base breakdown voltage Parameter V(BR)CBO IC=0.1mA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=0.1mA, IC=0 4 V Collector cut-off current ICBO VCB=80V, IE=0 0.1 µA Collector cut-off current ICES VCE=60V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA hFE(1) VCE=1V, IC=10mA 100 hFE(2) VCE=1V, IC=100mA 100 DC current gain conditions Min Typ Max Unit 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1.2 V Transition frequency fT VCE=2V,IC=10mA, f=100MHz 100 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５