US2300 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The US2300 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The US2300 meet the RoHS and Green Product requirement with full function reliability approved. BVDSS RDS(ON) 20V 55m ID 6.0A Applications z Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Features Advanced high cell density Trench technology SOT23 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available S OT-23 D S G Absolute Maximum Ratings S ymbol Limit Unit Drain-S ource Voltage V DS 20 V Gate-S ource Voltage V GS 12 V P arameter Drain C urrent-C ontinuous @ T J =25 C b -P ulsed ID 6 A IDM 20 A Drain-S ource Diode Forward C urrent IS 1.25 A PD 1.25 W T J , T S TG -55 to 150 Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange 1 C US2300 N-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 , unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 16V, V GS = 0V Gate-Body Leakage IGS S V GS = 10V, V DS = 0V Gate Threshold Voltage V GS (th) Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS V DS = V GS , ID = 250uA V GS = 4.5V, ID = 4A V GS = 2.5V, ID= 2A V DS = 5V, V GS = 4.5V Min Typ C Max Unit OFF CHAR ACTE R IS TICS ON CHAR ACTE R IS TICS DYNAMIC CHAR ACTE R IS TICS 1 uA 100 nA V DS = 5V, ID =4A 0.5 0.8 30 38 1.0 40 55 V 6 m-ohm m-ohm A 18.1 S 803 PF 120 PF 85 PF 15 ns 18 ns 78 ns c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time V b Forward Transconductance Turn-On Delay Time 20 V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) V DD = 10V, ID = 1A, V GS = 4.5V, R GE N = 6 ohm tr Turn-Off Delay Time tD(OFF) Fall Time Total Gate Charge tf 27 ns Qg 8.8 nC Gate-S ource Charge Q gs 1.8 nC Gate-Drain Charge Q gd 3.9 nC V DS =10V, ID = 4A, V GS =4.5V 2 US2300 N-Ch 20V Fast Switching MOSFETs Typical Characteristics E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.8 V GS = 0V, Is = 1.25A VSD 1.2 Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 12.5 15 V G S =10V V G S =2.5V 12 V G S =4.5V I D , Drain C urrent (A) ID , Drain C urrent(A) 10 7.5 V G S =2V 5.0 2.5 9 6 -55 C 3 T j=125 C 25 C V G S =1.5V 0 0 0 0.5 1 2 1.5 3 2.5 0 V DS , Drain-to-S ource Voltage (V ) 1.5 2.0 2.5 3.0 F igure 2. Trans fer C haracteris tics 45 R DS (ON) , On-R es is tance Normalized 1.6 V G S =2.5V 40 R DS (on) (m Ω) 1.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 35 V G S =4.5V 30 25 20 0 0.5 0 2.5 5.0 7.5 10 1.2 1.0 V G S =2.5V I D =2A 0.8 0.6 0.4 25 12.5 V G S =4.5V I D =4A 1.4 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V US2300 N-Ch 20V Fast Switching MOSFETs B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 80 20.0 25 C I D =4A Is , S ource-drain current (A) 70 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage Typical Characteristics 60 50 125 C 40 75 C 30 25 C 0 10.0 5.0 125 C 75 C 1.0 0 2 4 6 8 10 0 V G S , G ate-S ource Voltage (V ) 0.4 0.8 1.2 1.6 2.0 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 US2300 N-Ch 20V Fast Switching MOSFETs Typical Characteristics V G S , G ate to S ource V oltage (V ) 1200 C , C apacitance (pF ) 1000 C is s 800 600 400 C os s 200 C rs s V DS =10V I D =4A 3.6 2.7 1.8 0.9 0 0 0 4.5 5 10 15 20 25 30 0 2 V DS , Drain-to S ource Voltage (V ) 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 80 600 100 60 I D , Drain C urrent (A) Tr S witching T ime (ns ) 6 4 T D(off) Tf T D(on) 10 V DS =10V ,ID=1A 1 10 R 60 100 300 600 R g, G ate R es is tance ( Ω) V G S =4.5V im i t 10 1s 0m ms s DC 0.1 V G S =4.5V S ingle P ulse T A =25 C 0.1 V DS =10V ,ID=1A )L 1 0.03 6 10 (O N 10 V G S =4.5V 1 DS 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 5 US2300 N-Ch 20V Fast Switching MOSFETs Typical Characteristics V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 t1 t2 0.05 0.02 Single Pulse 0.01 0.01 0.00001 1. 2. 3. 4. 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000