Transistors SMD Type PNP Transistors 2SB929 TO-252 ● High forward current transfer ratio hFE Unit: mm +0.15 6.50-0.15 +0.2 5.30-0.2 which has satisfactory linearity +0.15 1.50 -0.15 ■ Features +0.1 2.30 -0.1 +0.8 0.50 -0.7 3 .8 0 ● Low collector to emitter saturation voltage VCE(sat) 0.60-+ 0.1 0.1 +0.15 5.55 -0.15 +0.25 2.65 -0.1 2.3 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 ● Complementary to 2SD1252 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3 Collector current - Pulse ICP -5 Collector Power Dissipation 1 Base Tc = 25°C 35 PC Ta = 25°C Junction Temperature Storage Temperature range 1.3 TJ 150 Tstg -55 to 150 Unit V A W ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -30 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60V , IE=0 Collector cutoff current ICES VCE= -60V ,VBE=0 -200 Collector cutoff current ICEO VCE= -30V ,IB=0 -300 IEBO Emitter cut-off current V -0.1 VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-375mA -1.2 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-375mA -1.2 Base - emitter voltage DC current gain Turn-on time VBE VCE= -4 V, IC= -3 A hFE(1) VCE= -4 V, IC= -1 A 70 hFE(2) VCE= -4 V, IC= -3 A 10 ton Storage time tstg Fall time tf Transition frequency fT Unit mA uA mA V -1.8 250 0.5 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A 1.2 us 0.3 VCE= -10V, IC= -500mA,f=10MHz 30 MHz ■ Classification of hfe(1) Type 2SB929-Q 2SB929-P Range 70-150 120-250 www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB929 ■ Typical Characterisitics PC — Ta 35 30 25 20 (1) 15 10 –5 IB=–100mA –4 –80mA –60mA –40mA –3 –30mA –20mA –2 –12mA 20 40 60 80 100 120 140 160 0 VCE(sat) — IC –2 –4 –6 –8 –10 –3 –1 TC=100˚C – 0.1 –25˚C 25˚C –1 –3 300 100 Collector current IC (A) –3 IC t=1ms 10ms –1 300ms – 0.3 – 0.1 – 0.01 –1 2SB929 – 0.03 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 2 www.kexin.com.cn –1.2 –1.6 TC=100˚C 25˚C –25˚C 30 10 3 –1 –3 VCE=–5V f=10MHz TC=25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 –3 Collector current IC (A) Rth(t) — t 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 –2.0 1000 Collector current IC (A) Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C – 0.8 3000 Area of safe operation (ASO) ICP – 0.4 10000 3000 Collector current IC (A) –10 0 Base to emitter voltage VBE (V) VCE=–4V 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 –25˚C –2 0 –12 1000 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –4 fT — I C 10000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 – 0.03 25˚C TC=100˚C hFE — IC IC/IB=10 – 0.3 –6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) –100 –8 –4mA –16mA Transition frequency fT (MHz) 0 0 VCE=–4V –8mA (2) (3) –10 TC=25˚C –1 5 0 –6 IC — VBE Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 40 IC — VCE 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10