MCMA140P1800TA Thyristor Module VRRM = 2x 1800 V I TAV = 140 A VT = 1.28 V Phase leg Part number MCMA140P1800TA Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability ● Direct Copper Bonded Al2O3-ceramic ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control ● Isolation Voltage: 4800 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120802b MCMA140P1800TA Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25°C max. 1900 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25°C 1800 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1800 V TVJ = 25°C 100 µA VR/D = 1800 V TVJ = 140°C 10 mA I T = 150 A TVJ = 25°C 1.29 V 1.63 V 1.28 V I T = 300 A TVJ = 125 °C I T = 150 A I T = 300 A I TAV average forward current TC = 85°C 180° sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current I²t value for fusing 1.70 V T VJ = 140 °C 140 A 220 A TVJ = 140 °C 0.85 V 520 W t = 10 ms; (50 Hz), sine TVJ = 45°C 2.40 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.59 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 2.04 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 2.21 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 28.8 kA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 27.9 kA²s TVJ = 140 °C 20.8 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25°C PGM max. gate power dissipation t P = 30 µs T C = 140 °C 20.2 kA²s 119 t P = 300 µs average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr mΩ K/W TC = 25°C CJ PGAV 2.8 0.22 TVJ = 140°C; f = 50 Hz repetitive, IT = 450 A pF 10 W 5 W 0.5 W 150 A/µs t P = 200 µs; di G /dt = 0.45 A/µs; I G = 0.45 A; VD = ⅔ VDRM non-repet., IT = 150 A 500 A/µs (dv/dt) cr critical rate of rise of voltage TVJ = 140°C VGT gate trigger voltage VD = 6 V TVJ = 25 °C TVJ = -40 °C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 °C 150 mA TVJ = -40 °C 200 mA TVJ = 140 °C 0.2 V 10 mA TVJ = 25 °C 200 mA VD = ⅔ VDRM 1000 V/µs R GK = ∞; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = ⅔ VDRM t p = 10 µs 1.5 V IG = 0.45 A; di G /dt = 0.45 A/µs IH holding current VD = 6 V R GK = ∞ TVJ = 25 °C 200 mA t gd gate controlled delay time VD = ½ VDRM TVJ = 25 °C 2 µs tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/µs VR = 100 V; I T = 150 A; VD = ⅔ VDRM TVJ = 140 °C di/dt = 10 A/µs; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 185 µs 20 V/µs; t p = 200 µs Data according to IEC 60747and per semiconductor unless otherwise specified 20120802b MCMA140P1800TA Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 140 °C -40 125 °C 125 °C Weight 90 g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App d Spb/Apb VISOL terminal to terminal 13.0 terminal to backside 16.0 creepage distance on surface | striking distance through air t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 9.7 mm 16.0 mm 4800 V 4000 V Part description M C M A 140 P 1800 TA Ordering Standard Ordering Number MCMA140P1800TA Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA140P1800TA * on die level = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] TO-240AA-1B Delivery Mode Box Code No. 512880 T VJ = 140 °C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 1.6 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved Quantity 6 Data according to IEC 60747and per semiconductor unless otherwise specified 20120802b MCMA140P1800TA Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20120802b MCMA140P1800TA Thyristor 105 2000 300 VR = 0 V 50 Hz, 80% VRRM 250 1600 200 IT ITSM TVJ = 45°C 2 It TVJ = 45°C TVJ = 140°C 104 150 [A] TVJ = 125°C 100 [A] 2 [A s] 1200 140°C TVJ = 140°C 50 TVJ = 25°C 0 0.5 103 800 1.0 1.5 2.0 0.01 0.1 VT [V] 1 1 t [s] 100 Fig. 3 I t versus time (1-10 s) 200 tp = 30 µs tp = 500 µs PGM = 120 W 60 W 8W TVJ = 125°C 10.0 ITAVM120 tgd [V] lim. [μs] 1.0 [A] 80 typ. IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 25°C 125°C 1 0.1 dc = 1 0.5 0.4 0.33 0.17 0.08 160 10 P = GAV IGD 4 5 6 7 8 910 t [ms] 100.0 0.1 0.01 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 1 Forward characteristics VG 2 1 40 0.1 0.01 10 0 0.10 1.00 10.00 0 40 IG [A] IG [A] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 80 120 160 Tcase [°C] Fig. 6 Max. forward current at case temperature 0.24 250 dc = 1 0.5 0.4 0.33 0.17 0.08 200 Ptot 150 [W] 0.20 RthHA 0.1 0.2 0.4 0.6 0.8 1.0 0.16 ZthJC 0.12 [K/W] 100 i Rthi (K/W) 1 0.0073 2 0.0128 3 0.1329 4 0.067 0.08 50 0.04 ti (s) 0.0001 0.0031 0.084 0.42 0.00 0 0 40 80 120 160 IT(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. © 2012 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [°C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20120802b