Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SA2021 0.10+0.05 –0.02 0.33+0.05 –0.02 1 0.23+0.05 –0.02 0.15 min. 2 0.15 min. • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 5˚ ■ Features 1.20±0.05 0.80±0.05 3 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5˚ Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.01 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin) Marking Symbol: 3F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = 20 V, IE = 0 0.1 µA ICEO VCE = 10 V, IB = 0 100 µA Collector to base voltage VCBO IC = 10 µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 Forward current transfer ratio hFE1 VCE = 10 V, IC = 2 mA 180 hFE2 VCE = 2 V, IC = 100 mA 90 VCE(sat) IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF VCB = 10 V, IE = −2 mA, f = 200 MHz 80 MHz Collector cutoff current Collector to emitter saturation voltage Collector output capacitance Transition frequency Cob fT 7 V 390 0.3 V 1