PANASONIC 2SC5609

Transistors
2SC5609
Silicon PNP epitaxial planer type
Unit: mm
For general amplification
Complementary to 2SA2021
0.10+0.05
–0.02
0.33+0.05
–0.02
1
0.23+0.05
–0.02
0.15 min.
2
0.15 min.
• High foward current transfer ratio hFE
• SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
5˚
■ Features
1.20±0.05
0.80±0.05
3
(0.40) (0.40)
0.80±0.05
1.20±0.05
0.52±0.03
5˚
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
7
V
Peak collector current
ICP
200
mA
Collector current
IC
100
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0 to 0.01
■ Absolute Maximum Ratings Ta = 25°C
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
Marking Symbol: 3F
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ICBO
VCB = 20 V, IE = 0
0.1
µA
ICEO
VCE = 10 V, IB = 0
100
µA
Collector to base voltage
VCBO
IC = 10 µA, IE = 0
60
V
Collector to emitter voltage
VCEO
IC = 2 mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 10 µA, IC = 0
Forward current transfer ratio
hFE1
VCE = 10 V, IC = 2 mA
180
hFE2
VCE = 2 V, IC = 100 mA
90
VCE(sat)
IC = 100 mA, IB = 10 mA
0.1
VCB = 10 V, IE = 0, f = 1 MHz
3.5
pF
VCB = 10 V, IE = −2 mA, f = 200 MHz
80
MHz
Collector cutoff current
Collector to emitter saturation voltage
Collector output capacitance
Transition frequency
Cob
fT
7
V
390
0.3
V
1