BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor (H2BIP). High dynamic characteristics and lot−to−lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. It’s characteristics make it also suitable for PFC application. http://onsemi.com POWER TRANSISTOR 5.0 AMPERES, 700 VOLTS, 75 WATTS Features • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector−Emitter Free Wheeling Diode • Fully Characterized and Guaranteed Dynamic VCE(sat) • “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads TO−220AB CASE 221A−09 STYLE 1 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 400 Vdc Collector−Base Breakdown Voltage VCBO 700 Vdc Collector−Emitter Breakdown Voltage VCES 700 Vdc Emitter−Base Voltage VEBO 12 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 5 10 Adc Base Current − Continuous − Peak (Note 1) IB IBM 2 4 Adc PD 75 0.6 W W/_C TJ, Tstg −65 to 150 _C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature 1 2 3 MARKING DIAGRAM BUL45D2G AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristics RqJC 1.65 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 5 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUL45D2G Package Shipping TO−220 (Pb−Free) 50 Units / Rail Publication Order Number: BUL45D2/D BUL45D2G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) VCEO(sus) 400 450 Vdc Collector−Base Breakdown Voltage (ICBO = 1 mA) VCBO 700 910 Vdc Emitter−Base Breakdown Voltage (IEBO = 1 mA) VEBO 12 14.1 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO 100 mAdc ICES 100 500 100 mAdc IEBO 100 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 500 V, VEB = 0) @ TC = 25°C @ TC = 125°C @ TC = 125°C Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0) ON CHARACTERISTICS Base−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) (IC = 2 Adc, IB = 0.4 Adc) Collector−Emitter Saturation Voltage (IC = 0.8 Adc, IB = 80 mAdc) @ TC = 25°C @ TC = 125°C VBE(sat) Vdc @ TC = 25°C @ TC = 125°C @ TC = 25°C @ TC = 125°C VCE(sat) 0.8 0.7 1 0.9 0.89 0.79 1 0.9 0.28 0.32 0.4 0.5 Vdc (IC = 2 Adc, IB = 0.4 Adc) @ TC = 25°C @ TC = 125°C 0.32 0.38 0.5 0.6 (IC = 0.8 Adc, IB = 40 mAdc) @ TC = 25°C @ TC = 125°C 0.46 0.62 0.75 1 DC Current Gain (IC = 0.8 Adc, VCE = 1 Vdc) (IC = 2 Adc, VCE = 1 Vdc) @ TC = 25°C @ TC = 125°C hFE @ TC = 25°C @ TC = 125°C 22 20 34 29 10 7 14 9.5 — DIODE CHARACTERISTICS Forward Diode Voltage (IEC = 1 Adc) @ TC = 25°C @ TC = 125°C VEC V 1.04 0.7 1.5 (IEC = 2 Adc) @ TC = 25°C @ TC = 125°C 1.2 1.6 (IEC = 0.4 Adc) @ TC = 25°C @ TC = 125°C 0.85 0.62 1.2 Forward Recovery Time (see Figure 27) (IF = 1 Adc, di/dt = 10 A/ms) @ TC = 25°C Tfr 330 (IF = 2 Adc, di/dt = 10 A/ms) @ TC = 25°C 360 (IF = 0.4 Adc, di/dt = 10 A/ms) @ TC = 25°C 320 http://onsemi.com 2 ns BUL45D2G ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) fT 13 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Cob 50 75 pF Input Capacitance (VEB = 8 Vdc) Cib 340 500 pF VCE(dsat) 3.7 9.4 V DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 1 ms and 3 ms respectively after rising IB1 reaches 90% of final IB1 IC = 1 A IB1 = 100 mA VCC = 300 V IC = 2 A IB1 = 0.8 A VCC = 300 V @ 1 ms @ TC = 25°C @ TC = 125°C @ 3 ms @ TC = 25°C @ TC = 125°C 0.35 2.7 V @ 1 ms @ TC = 25°C @ TC = 125°C 3.9 12 V @ 3 ms @ TC = 25°C @ TC = 125°C 0.4 1.5 V SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−on Time Turn−off Time Turn−on Time Turn−off Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 1 Adc VCC = 300 Vdc IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc @ TC = 25°C @ TC = 125°C ton 90 105 150 ns @ TC = 25°C @ TC = 125°C toff 1.15 1.5 1.3 ms @ TC = 25°C @ TC = 125°C ton 90 110 150 ns @ TC = 25°C @ TC = 125°C toff 2.4 ms 2.1 3.1 SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time Storage Time Crossover Time IC = 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc Fall Time Storage Time Crossover Time IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc @ TC = 25°C @ TC = 125°C tf 90 93 150 ns @ TC = 25°C @ TC = 125°C ts 0.72 1.05 0.9 ms @ TC = 25°C @ TC = 125°C tc 95 95 150 ns @ TC = 25°C @ TC = 125°C tf 80 105 150 ns @ TC = 25°C @ TC = 125°C ts 2.25 ms @ TC = 25°C @ TC = 125°C tc 300 ns http://onsemi.com 3 1.95 2.9 225 450 BUL45D2G TYPICAL STATIC CHARACTERISTICS 100 100 VCE = 5 V TJ = 125°C 60 TJ = 25°C 40 TJ = -20°C TJ = 125°C 80 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 80 20 TJ = 25°C 60 TJ = -20°C 40 20 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0 0.001 10 Figure 1. DC Current Gain @ 1 Volt 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 2. DC Current Gain @ 5 Volt 4 10 TJ = 25°C IC/IB = 5 VCE , VOLTAGE (VOLTS) VCE , VOLTAGE (VOLTS) TJ = 25°C 3 2 5A 1 1A 2A 3A 1 TJ = 125°C 4A TJ = -20°C IC = 500 mA 0 0.001 0.01 1 0.1 IB, BASE CURRENT (AMPS) 0.1 0.001 10 Figure 3. Collector Saturation Region 10 Figure 4. Collector−Emitter Saturation Voltage 10 10 IC/IB = 20 VCE , VOLTAGE (VOLTS) IC/IB = 10 VCE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1 TJ = -20°C 1 TJ = -20°C TJ = 25°C TJ = 125°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.001 10 Figure 5. Collector−Emitter Saturation Voltage 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 6. Collector−Emitter Saturation Voltage http://onsemi.com 4 BUL45D2G TYPICAL STATIC CHARACTERISTICS 10 10 IC/IB = 10 VBE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) IC/IB = 5 TJ = 25°C TJ = -20°C 1 TJ = 125°C 1 TJ = -20°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 0.001 10 Figure 7. Base−Emitter Saturation Region 10 Figure 8. Base−Emitter Saturation Region 10 10 1 FORWARD DIODE VOLTAGE (VOLTS) IC/IB = 20 VBE , VOLTAGE (VOLTS) 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = -20°C TJ = 125°C TJ = 25°C 0.1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 25°C 1 125°C 0.1 0.01 10 Figure 9. Base−Emitter Saturation Region 1 0.1 REVERSE EMITTER-COLLECTOR CURRENT (AMPS) 10 Figure 10. Forward Diode Voltage 1000 1000 Cib (pF) TJ = 25°C f(test) = 1 MHz BVCER @ 10 mA 900 BVCER (VOLTS) 100 Cob (pF) 10 TJ = 25°C 800 700 600 BVCER(sus) @ 200 mA 500 400 1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 Figure 11. Capacitance 100 RBE (W) Figure 12. BVCER = f(ICER) http://onsemi.com 5 1000 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 5 1000 t, TIME (ns) 800 TJ = 125°C TJ = 25°C 600 IC/IB = 10 400 3 2 IC/IB = 5 0 0 0.5 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 3.5 4 0.5 1.5 2 2.5 3 3.5 4 Figure 14. Resistive Switch Time, toff 5 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH IC/IB = 5 2 1 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 4 t, TIME (s) μ 3 t, TIME (s) μ 1 IC, COLLECTOR CURRENT (AMPS) Figure 13. Resistive Switch Time, ton 3 2 1 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C 0 0 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 0 4 2 1 3 IC, COLLECTOR CURRENT (AMPS) 4 Figure 16. Inductive Storage Time, tsi @ IC/IB = 10 Figure 15. Inductive Storage Time, tsi @ IC/IB = 5 600 400 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 500 TJ = 125°C TJ = 25°C IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH 300 tc t, TIME (ns) 400 t, TIME (ns) IC/IB = 5 TJ = 125°C TJ = 25°C 1 200 IBon = IBoff VCC = 300 V PW = 20 ms IC/IB = 10 4 t, TIME (s) μ IBon = IBoff VCC = 300 V PW = 20 ms 300 200 200 100 100 TJ = 125°C TJ = 25°C tfi 0 0 1 2 3 IC, COLLECTOR CURRENT (AMPS) 0 4 0 Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5 1 2 3 IC, COLLECTOR CURRENT (AMPS) Figure 18. Inductive Switching, tfi @ IC/IB = 10 http://onsemi.com 6 4 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 1500 5 t, TIME (ns) 1000 TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C tsi , STORAGE TIME (μs) IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH 500 IC = 1 A 4 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 3 IC = 2 A 0 2 1 3 2 IC, COLLECTOR CURRENT (AMPS) 0 4 0 5 Figure 19. Inductive Switching, tc @ IC/IB = 10 15 20 Figure 20. Inductive Storage Time 450 1400 IBoff = IBon VCC = 15 V VZ = 300 V LC = 200 mH TJ = 125°C TJ = 25°C IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH 1200 t c , CROSSOVER TIME (ns) 350 t fi , FALL TIME (ns) 10 hFE, FORCED GAIN IC = 1 A 250 150 1000 TJ = 125°C TJ = 25°C IC = 2 A 800 600 400 200 IC = 2 A IC = 1 A 50 0 2 4 6 8 10 12 14 hFE, FORCED GAIN 16 18 2 20 Figure 21. Inductive Fall Time 8 10 12 14 hFE, FORCED GAIN 16 18 20 360 2000 IBon = IBoff VCC = 15 V VZ = 300 V LC = 200 mH t fr , FORWARD RECOVERY TIME (ns) IB1 = IB2 t, TIME (ns) 6 Figure 22. Inductive Crossover Time 3000 IB = 50 mA 1000 4 IB = 100 mA IB = 200 mA IB = 500 mA dI/dt = 10 A/ms TC = 25°C 340 320 IB = 1 A 0 0.5 300 1 1.5 2 2.5 3 IC, COLLECTOR CURRENT (AMPS) 3.5 4 0 Figure 23. Inductive Storage Time, tsi 0.5 1 1.5 IF, FORWARD CURRENT (AMP) Figure 24. Forward Recovery Time tfr http://onsemi.com 7 2 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS 10 VCE 9 dyn 1 ms IC 90% IC 8 dyn 3 ms tfi tsi 7 6 0V Vclamp 5 10% IC 10% Vclamp tc 4 IB 90% IB 3 1 ms 2 IB 90% IB1 1 3 ms 0 0 1 2 3 TIME Figure 25. Dynamic Saturation Voltage Measurements VFR (1.1 VF unless otherwise specified) VF VF tfr 0.1 VF 0 10% IF 0 2 5 6 7 Figure 26. Inductive Switching Measurements VFRM IF 4 TIME 4 6 Figure 27. tfr Measurements http://onsemi.com 8 8 10 8 BUL45D2G TYPICAL SWITCHING CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit +15 V 1 mF 150 W 3W 100 W 3W IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 RB1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A COMMON 50 W MJE210 MTP12N10 150 W 3W 500 mF IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 Volts IC(pk) = 100 mA 1 mF -Voff Inductive Switching L = 200 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 6 1 ms 10 10 ms 5 ms 1 DC 0.1 1 ms EXTENDED SOA IC, COLLECTOR CURRENT (AMPS) 100 0.01 TC ≤ 125°C GAIN ≥ 5 LC = 2 mH 5 4 3 2 -5 V 1 0V -1.5 V 0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 200 Figure 28. Forward Bias Safe Operating Area 300 400 500 600 700 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 29. Reverse Bias Safe Operating Area http://onsemi.com 9 800 BUL45D2G TYPICAL CHARACTERISTICS POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 80 120 60 100 TC, CASE TEMPERATURE (°C) 140 160 Figure 30. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC −VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30. TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.5 0.2 0.1 0.1 P(pk) 0.05 0.02 t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.1 1 10 RqJC(t) = r(t) RqJC RqJC = 2.5°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 100 t, TIME (ms) Figure 31. Typical Thermal Response (ZqJC(t)) for BUL45D2 http://onsemi.com 10 1000 BUL45D2G PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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