MP4411 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4411 Industrial Applications High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver Unit: mm For Solenoid Driver • 4-V gate drivability • Small package by full molding (SIP 12 pin) • High drain power dissipation (4-device operation) • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) • Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) : PT = 28 W (Tc = 25°C) IDSS = 100 µA (max) (VDS = 100 V) Maximum Ratings (Ta = 25°C) Characteristics JEDEC ― V JEITA ― 100 V TOSHIBA ±20 V Weight: 3.9 g (typ.) Symbol Rating Unit Drain-source voltage VDSS 100 Drain-gate voltage (RGS = 20 kΩ) VDGR Gate-source voltage VGSS DC Drain current Pulse Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation Ta = 25°C (4-device operation) Tc = 25°C ID 3 IDP 12 PD 2.2 PDT 4.4 28 A W W Single pulse avalanche energy (Note 1) EAS 140 mJ Avalanche current IAR 3 A EAR 0.22 EART 0.44 1 device operation Repetitive avalanche energy (Note 2) 4 devices operation 2-32C1D mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2004-07-01 MP4411 Array Configuration Thermal Characteristics 2 3 4 5 1 6 9 10 11 12 8 7 Characteristics Thermal resistance from channel to ambient Symbol Max Unit ΣRth (ch-a) 28.4 °C/W ΣRth (ch-c) 4.46 °C/W TL 260 °C (4-device operation, Ta = 25°C) Thermal resistance from channel to case (4-device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ― ― ±10 µA Drain cut-off current IDSS VDS = 100 V, VGS = 0 V ― ― 100 µA ― ― V V Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 Vth VDS = 10 V, ID = 1 mA 0.8 ― 2.0 VGS = 4 V, ID = 2 A ― 0.36 0.45 VGS = 10 V, ID = 2 A ― 0.28 0.35 VDS = 10 V, ID = 2 A 1.5 3.5 ― S ― 280 ― pF ― 50 ― pF ― 105 ― pF ― 20 ― ― 50 ― ― 40 ― ― 170 ― ― 13.5 ― nC ― 8.5 ― nC ― 5 ― nC Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ID = 2 A 10 V Turn-on time ton VGS 0V Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 50 Ω Switching time tf toff Qgs Gate-drain (“miller”) charge Qgd ns VDD ≈ 50 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 µs Qg Gate-source charge Ω VOUT RL = 25 Ω Drain-source breakdown voltage VDD ≈ 80 V, VGS = 10 V, ID = 3 A 2 2004-07-01 MP4411 Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IDR ― ― ― 3 A Pulse drain reverse current IDRP ― ― ― 12 A Diode forward voltage VDSF Reverse recovery time trr Reverse recovery charge Qrr Continuous drain reverse current IDR = 3 A, VGS = 0 V ― ― −1.5 V IDR = 3 A, VGS = 0 V, dIDR/dt = 50 A/µs ― 100 ― ns ― 0.2 ― µC Flyback-Diode Rating and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 3 A Reverse current IR VR = 100 V ― ― 0.4 µA Reverse voltage VR IR = 100 µA 100 ― ― V Forward voltage VF IF = 0.5 A ― ― 1.8 V Marking MP4411 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2004-07-01 MP4411 ID – VDS 2.0 ID – VDS 10 8 Tc = 25°C 4 1.6 2.6 2.4 0.4 0 0 0.4 0.6 Drain-source voltage 0.8 4 6 4 3.5 3 2 VGS = 2.2 V 0.2 VGS = 2.5 V 0 0 1.0 VDS (V) 2 4 ID – VGS 10 VDS (V) VDS – VGS Common source VDS = 10 V Tc = 25°C (V) Common source Drain-source voltage VDS (A) ID Drain current 8 3.2 4 2 6 Drain-source voltage 5 3 Tc = 25°C (A) (A) ID Drain current 2.8 0.8 Common source 6 8 10 1.2 8 10 3 ID 6 Drain current Common source 25 1 100 2.4 1.6 ID = 5 A 3 0.8 1.5 ) Ta = −55°C 0 0 1 2 3 Gate-source voltage 4 VGS 0 0 5 0.8 4 8 Gate-source voltage (V) |Yfs| – ID (V) Common source VDS = 10 V Drain-source on resistance RDS(ON) (Ω) Forward transfer admittance |Yfs| (S) VGS 20 3 Common source Ta = −55°C 3 100 25 1 0.5 0.3 0.1 16 RDS (ON) – ID 10 5 12 0.3 0.5 1 Drain current 3 5 Tc = 25°C 1 0.5 10 0.1 0.1 10 ID (A) VGS = 4 V 0.3 0.3 0.5 1 3 5 10 Drain current ID (A) 4 2004-07-01 MP4411 IDR – VDS 10 Common source Drain reverse current IDR (A) Drain-source on resistance RDS (ON) (Ω) RDS (ON) – Tc 1.0 0.8 1.5 0.8 0.6 0.4 ID = 3 A 3 VGS = 4 V 0.8, 1.5 VGS = 10 V 0.2 5 VGS = 10 V 3 3 1 0.5 1 0 0.3 Common source Tc = 25°C 0 −80 −40 0 40 80 Case temperature Tc 120 0.1 0 160 −0.5 (°C) −1.0 −1.5 Drain-source voltage Capacitance – VDS −2.0 VDS (V) Vth – Tc 3000 4 Vth (V) Common source 500 Ciss 300 Gate threshold voltage Capacitance C (pF) 1000 Coss 100 50 Common source 30 VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 0.3 0.5 Crss 1 3 5 10 Drain-source voltage 30 50 100 3 VDS = 10 V ID = 1 mA 2 1 0 −80 VDS (V) −40 0 40 Case temperature Dynamic Input/Output Characteristics Tc 120 160 (°C) Safe Operating Area 20 100 80 40 8 20 0 0 Common source VDD = 80 V VGS 4 4 ID = 3 A Tc = 25°C 8 12 16 100 µs* (A) ID 12 Drain current Drain-source voltage 60 VGS (V) 16 10 Gate-source voltage 80 VDS (V) IDP max VDS 0 20 3 ID max 1 ms* 1 100 ms* *: Single nonrepetitive pulse Tc = 25°C 0.3 Curves must be derated linearly with increase in temperature. 0.1 1 3 10 30 Drain-source voltage Total gate charge Q g (nC) 5 10 ms* 100 VDS 300 (V) 2004-07-01 MP4411 rth – tw (°C/W) 300 Curves should be applied in thermal Transient thermal resistance rth 100 (3) limited area. (sSngle nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (1) 30 (2) 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation 1 (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.5 0.001 0.01 0.1 1 Circuit board 10 Pulse width tw 100 EAS – TcH EAS (mJ) (2) 2-device operation (3) 3-device operation (W) (4) 4-device operation Attached on a circuit board (4) (3) Avalanche energy PDT Total power dissipation 200 (1) 1-device operation 6 Circuit board (2) 2 0 0 (1) 40 80 120 Ambient temperature 1000 (s) PDT – Ta 8 4 (4) 160 Ta 160 120 80 40 0 25 200 50 (°C) 75 100 Channel temperature 125 Tch 150 (°C) ∆Tch – PDT Channel temperature increase ∆Tch (°C) 160 (1) (2) (3) (4) 120 15 V 80 IAR −15 V VDD Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation TEST CIRCUIT (3) 3-device operation (4) 4-device operation 0 0 BVDSS 2 4 6 Total power dissipation 8 PDT Peak IAR = 3 A, RG = 25 Ω VDD = 50 V, L = 20 mH 10 VDS TEST WAVE FORM ⎞ 1 2 ⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜⎜ ⎟ − 2 V DD ⎠ ⎝ B VDSS (W) 6 2004-07-01 MP4411 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2004-07-01