FREESCALE MRF557

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by MRF557/D
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large signal predriver stages in the
800 MHz frequency range.
• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
1.5 W, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
• Cost Effective PowerMacro Package
• Electroless Tin Plated Leads for Improved Solderability
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16
Vdc
Collector–Base Voltage
VCBO
36
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
400
mAdc
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
PD
3.0
40
Watts
mW/°C
Storage Temperature Range
Tstg
– 55 to +150
°C
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
ICES
—
—
0.1
mAdc
hFE
50
90
200
—
Cob
—
3.5
5.0
pF
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF557 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1995
MRF557
1
ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz)
Figures 1, 2
Gpe
8.0
9.0
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W, f = 870 MHz)
Figures 1, 2
ηc
55
60
—
%
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 225 mW, f = 870 MHz,
VSWR ≥ 10:1 all phase angles)
Figures 1, 2
ψ
No Degradation in Output Power
L5
+
C8
B
B
+
C9
VCC
C10
–
L1
L4
C6
L3
Z3
RF
POWER
INPUT
Z4
L2
RF
POWER
OUTPUT
Z2
Z1
C3
C1
C4
D.U.T.
C5
C7
C2
C1, C2, C5, C7 — 0.8 – 8.0 pF Johanson Gigatrim*
C3, C4 — 15 pF Clamped Mica, Mini–Underwood
C6 — 27 pF Clamped Mica, Mini–Underwood
C8 — 91 pF Clamped Mica, Mini–Underwood
C9 — 68 pF Clamped Mica, Mini–Underwood
C10 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
PCB — 1/16″ Glass Teflon, εr = 2.56
L1, L4 — 5 Turns #21 AWG, 5/32″ ID
L2, L3 — 60 x 125 x 250 Mils Copper Tab on
L2, L3 — 27 Mil Thick Alumina Substrate
L5 — 7 Turns #21 AWG, 5/32″ ID
Z1 — 1.65 x 0.163″ Microstrip, Zo = 50 Ω
Z2 — 0.85 x 0.163″ Microstrip, Zo = 50 Ω
Z3 — 0.625 x 0.163″ Microstrip, Zo = 50 Ω
Z4 — 1.35 x 0.163″ Microstrip, Zo = 50 Ω
*Fixed tuned for broadband response.
Figure 1. 800 – 880 MHz Broadband Circuit
MRF557
2
MOTOROLA RF DEVICE DATA
80
70
ηc
12
IRL, INPUT RETURN LOSS (dB)
G pe , POWER GAIN (dB)
14
Gpe
10
8
6
4
IRL
2
0
800
820
840
860
f, FREQUENCY (MHz)
60
50
5
40
10 30
15 20
20 10
η c , COLLECTOR EFFICIENCY (%)
16
0
900
880
Figure 2. Performance in Broadband Circuit
Zin
Ohms
VCC = 7.5 V
ZOL*
Ohms
VCC = 12.5 V
VCC = 7.5 V
VCC = 12.5 V
Pout 806 MHz = 2.1 W
Pout 870 MHz = 1.8 W
Pout 960 MHz = 1.1 W
f
Frequency
MHz
Pin = 300 mW
Pin = 200 mW
Pout 806 MHz = 1.7 W
Pout 870 MHz = 1.4 W
Pout 960 MHz = 1.0 W
806
2.4 + j3.9
2.4 + j3.1
14.7 – j4.4
13.6 – j12.8
870
2.5 + j4.6
2.7 + j3.7
17.2 – j8.6
16 – j13.2
960
6.1 + j7.4
6.8 + j8.3
40 – j8.3
38 – j10.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MOTOROLA RF DEVICE DATA
MRF557
3
2.5
Pout , POWER OUTPUT (WATTS)
Pout , POWER OUTPUT (WATTS)
2.5
VCC = 12.5 Vdc
2
1.5
7.5 Vdc
1
0.5
VCC = 7.5 Vdc
2
Pin = 300 mW
1.5
200 mW
1
100 mW
0.5
f = 870 MHz
0
0
100
200
Pin, POWER INPUT (mW)
300
0
800
400
Figure 3. Power Output versus Power Input
820
840
860
880
900
f, FREQUENCY (MHz)
920
940
960
Figure 4. Power Output versus Frequency
2.5
4
Pout , POWER OUTPUT (WATTS)
Pout , POWER OUTPUT (WATTS)
Pin = 300 mW
2
200 mW
1.5
100 mW
1
0.5
f = 806 MHz
3
Pin = 300 mW
200 mW
2
100 mW
1
VCC = 12.5 Vdc
0
0
800
820
840
860
880
900
f, FREQUENCY (MHz)
920
940
960
6
Figure 5. Power Output versus Frequency
10
12
VCC, SUPPLY VOLTAGE (VOLTS)
14
16
Figure 6. Power Output versus Supply Voltage
4
Pout , POWER OUTPUT (WATTS)
4
Pout , POWER OUTPUT (WATTS)
8
f = 870 MHz
3
Pin = 300 mW
200 mW
2
100 mW
1
0
f = 960 MHz
3
Pin = 300 mW
2
200 mW
1
100 mW
0
6
8
10
12
VCC, SUPPLY VOLTAGE (VOLTS)
14
Figure 7. Power Output versus Supply Voltage
MRF557
4
16
6
8
10
12
14
VCC, SUPPLY VOLTAGE (VOLTS)
16
Figure 8. Power Output versus Supply Voltage
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
F
H
R
1
A
4
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD DIMENSIONS UNCONTROLLED WITHIN
DIMENSION N AND R.
3
D
K
N
T
SEATING
PLANE
C
DIM
A
C
D
F
H
J
K
N
R
T
INCHES
MIN
MAX
0.175
0.205
0.075
0.100
0.033
0.039
0.097
0.104
0.348
0.383
0.008
0.012
0.285
0.320
–––
0.065
–––
0.128
0.025
0.040
MILLIMETERS
MIN
MAX
4.45
5.20
1.91
2.54
0.84
0.99
2.46
2.64
8.84
9.72
0.24
0.30
7.24
8.12
–––
1.65
–––
3.25
0.64
1.01
J
STYLE 2:
PIN 1.
2.
3.
4.
COLLECTOR
EMITTER
BASE
EMITTER
CASE 317D–02
ISSUE C
MOTOROLA RF DEVICE DATA
MRF557
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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MRF557
6
◊
*MRF557/D*
MRF557/D
MOTOROLA RF DEVICE
DATA