STPS1100U POWER SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF(AV) 1.5 A VRRM 100 V VF (max) 0.70 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE CAPABILITY SMB (Plastic) DESCRIPTION High voltage Schottky rectifier suited for SLIC protection during the card insertion operation. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 100 V IF(RMS) RMS Forward Current 10 A IF(AV) Average Forward Current TL = 90°C δ = 0.5 VR = 60V 1.5 A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal 75 A IRRM Peak Repetitive Reverse Current tp = 2 µs F = 1KHz 1 A IRSM Non Repetitive Peak Reverse Current tp = 100 µs 1 A Tstg Tj Storage Temperature Range Max. Operating Junction Temperature - 65 to + 150 115 °C 1000 V/µs dV/dt Critical Rate of Rise of Reverse Voltage April 1997 - Ed: 3 1/5 STPS1100U THERMAL RESISTANCE Symbol Rth (j-I) Parameter Value Unit 20 °C/W Junction-leads ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * VF ** Parameter Tests Conditions Min. Unit 30 µA 5 mA V Tj = 25°C VR = VRRM Forward voltage drop Tj = 25°C IF = 100 mA 0.43 Tj = 25°C IF = 3 A 0.95 Tj = 100°C IF = 1.5 A 0.57 0.71 Tj = 100°C IF = 3 A 0.67 0.85 1 Tj = 100°C Fig. 1: Average forward power dissipation versus average forward current. C = 365pF Fig. 2: Average forward current versus ambient temperature (δ=0.5). IF(av)(A) PF(av)(W) 1.4 δ = 0.05 1.2 δ = 0.1 δ = 0.2 δ = 0.5 1.0 δ=1 0.8 0.6 T 0.4 0.2 δ=tp/T IF(av) (A) 0.2 Max. Reverse leakage current Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2% To evaluate the conduction losses use the following equation: P = 0.65 x IF(AV) + 0.067 IF2(RMS) Typical junction capacitance, VR = 0V F = 1MHz Tj = 25°C 0.0 0.0 Typ. 0.4 0.6 0.8 1.0 1.2 1.4 tp 1.6 1.8 2/5 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W T δ=tp/T 0 tp Tamb(°C) 10 20 30 40 50 60 70 80 90 100 110 120 STPS1100U Fig. 3: Non repetitive surge peak forward current versus overload duration; device mounted on printed circuit board S(Cu)=1cm2 (maximum values). IM(A) 10 9 8 7 6 5 4 3 IM 2 1 0 0.001 Ta=25°C Ta=50°C t t(s) δ=0.5 0.010 Ta=100°C 0.100 1.000 Fig. 5: Variation of thermal resistance junction to ambient versus copper surface under each lead. Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 Printed circuit board: SCu=1cm² (e=35 µm) 0.9 0.8 0.7 0.6 δ = 0.5 0.5 0.4 0.3 δ = 0.2 0.2 δ = 0.1 0.1 tp Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 δ=tp/T 1.0E+2 tp 1.0E+3 Fig. 6: Reverse leakage current versus reverse voltage applied (typical values). Rth(j-a) (°C/W) 100 T IR(µA) P=1.5W Printed circuit board epoxy (Cu thickness:35 µm) 1.0E+3 Tj=100°C 90 1.0E+2 80 Tj=75°C 70 1.0E+1 60 50 Tj=25°C 1.0E+0 40 30 20 0.0 S(Cu) (cm²) 1.0 2.0 3.0 1.0E-1 4.0 5.0 VR(V) 0 10 20 30 40 50 60 70 80 90 100 3/5 STPS1100U Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Fig. 8: Forward voltage drop versus forward current (maximum values). C(pF) VFM(V) 200 1.6 F=1MHz Tj=25°C 1.4 100 1.2 1.0 50 0.8 0.6 0.4 20 1 2 5 10 Tj=100°C 0.2 VR(V) 10 Tj=25°C 20 50 100 4/5 0.0 1E-4 IFM(A) 1E-3 1E-2 1E-1 1E+0 1E+1 STPS1100U PACKAGE MECHANICAL DATA SMB (plastic) DIMENSIONS E REF. B C J F H A A a1 B b1 C D E F H J Millimeters Inches Min. Max. Min. Max. 2.44 0.10 1.96 0.25 3.65 5.39 4.15 1.00 2.33 2.05 2.62 0.20 2.11 0.35 3.93 5.59 4.30 1.27 2.41 2.13 0.096 0.004 0.077 0.010 0.143 0.212 0.163 0.039 0.092 0.080 0.103 0.008 0.083 0.014 0.155 0.220 0.170 0.050 0.095 0.084 b1 a1 D FOOTPRINT DIMENSIONS (in millimeters) SMB (plastic) Voltage (V) 100 Marking E11 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5