P3055LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage TC = 25 °C Continuous Drain Current Pulsed Drain Current TC = 100 °C 2 Repetitive Avalanche Energy UNITS VGS ±20 V 12 8 IDM 45 L = 0.1mH EAS 60 L = 0.05mH EAR 3 TC = 25 °C Power Dissipation LIMITS ID 1 Avalanche Energy SYMBOL Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) mJ 43 PD TC = 100 °C A W 15 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 2.6 Junction-to-Ambient RθJA 60 Case-to-Heatsink RθCS UNITS °C / W 0.6 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 25 VGS(th) VDS = VGS, ID = 250µA 0.8 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage 1.2 2.5 ±250 nA VDS = 20V, VGS = 0V 25 VDS = 20V, VGS = 0V, TJ = 125 °C 250 1 V µA DEC-03-2001 P3055LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM On-State Drain Current1 ID(ON) Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 VDS = 10V, VGS = 10V gfs TO-263 12 A VGS = 5V, ID = 12A 70 120 VGS = 10V, ID = 12A 50 90 VDS = 15V, ID = 12A 16 mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 60 Total Gate Charge2 Qg 15 Gate-Source Charge 2 Gate-Drain Charge2 Turn-On Delay Time 2 450 VGS = 0V, VDS = 15V, f = 1MHz Qgs VDS = 0.5V(BR)DSS, VGS = 10V, 2.0 Qgd ID = 6A 7.0 td(on) tr VDS = 15V, RL = 1Ω 6.0 Turn-Off Delay Time2 td(off) ID ≅ 12A, VGS = 10V, RGS = 2.5Ω 20 Fall Time2 nC 6.0 2 Rise Time pF 200 tf nS 5.0 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS 12 Pulsed Current ISM 20 Forward Voltage1 VSD 3 Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = IS, VGS = 0V trr IRM(REC) IF = IS, dlF/dt = 100A / µS Qrr 1.5 A V 30 nS 15 A 0.043 µC 1 Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 2 REMARK: THE PRODUCT MARKED WITH “P3055LS”, DATE CODE or LOT # 2 DEC-03-2001 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor 3 P3055LS TO-263 DEC-03-2001 P3055LS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 TO-263 (D2PAK) MECHANICAL DATA Dimension mm Min. Typ. Max. A 14.5 15 15.8 B 4.2 C 1.20 D Dimension Min. Typ. Max. H 1.0 1.5 1.8 4.7 I 9.8 1.35 J 6.5 K 1.5 2.8 E 0.3 F -0.102 G 8.5 0.4 9 mm 0.5 L 0.7 0.203 M 4.83 9.5 N 4 10.3 1.4 5.08 5.33 DEC-03-2001