Inchange Semiconductor Product Specification 3DD523 Silicon NPN Power Transistor DESCRIPTION ·With TO-3 package ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V 10 A 100 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.52 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 3DD523 Silicon NPN Power Transistor CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 60 V VCER Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ω 70 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 3.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA ICEX Collector cut-off current VCE=100V; VBE(off)=1.5V TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 55 hFE-2 DC current gain IC=10A ; VCE=4V 5.0 Second breakdown collector current With base forward biased VCE=40Vdc,t=1.0s, Nonrepetitive 2.87 A Transition frequency IC=0.5A ; VCE=10V 2.5 MHz Is/b fT 2 80 Inchange Semiconductor Product Specification 3DD523 Silicon NPN Power Transistor PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3