ISC 3DD523

Inchange Semiconductor
Product Specification
3DD523
Silicon NPN Power Transistor
DESCRIPTION
·With TO-3 package
·DC Current Gain -hFE = 20–70 @ IC = 4 Adc
·Collector–Emitter Saturation Voltage VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
·Excellent Safe Operating Area
APPLICATIONS
·Designed for general–purpose switching
and amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
7
V
10
A
100
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.52
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
3DD523
Silicon NPN Power Transistor
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
60
V
VCER
Collector-emitter sustaining voltage
IC=0.2A ;RBE=100Ω
70
V
VCEsat-1
Collector-emitter saturation voltage
IC=4A ;IB=0.4A
1.1
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A ;IB=3.3A
3.0
V
VBE
Base-emitter on voltage
IC=4A ; VCE=4V
1.5
V
ICEO
Collector cut-off current
VCE=30V; IB=0
0.7
mA
ICEX
Collector cut-off current
VCE=100V; VBE(off)=1.5V
TC=150℃
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE-1
DC current gain
IC=5A ; VCE=5V
55
hFE-2
DC current gain
IC=10A ; VCE=4V
5.0
Second breakdown collector current
With base forward biased
VCE=40Vdc,t=1.0s,
Nonrepetitive
2.87
A
Transition frequency
IC=0.5A ; VCE=10V
2.5
MHz
Is/b
fT
2
80
Inchange Semiconductor
Product Specification
3DD523
Silicon NPN Power Transistor
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3