KEXIN KTS1C1S250

IC
IC
SMD Type
Mesh Overlay Power MOSFET
KTS1C1S250
Features
Typical RDS(on) (N-Channel)=0.9
Typical RDS(on) (N-Channel)=2.1
Gate-source zener diode
Standard outline for easy
automated surface mount assembly
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 k
)
Gate-to-Source Voltage
Symbol
N-Channel
P-Channel
VDS
250
250
VDGR
250
250
V
25
VGS
V
Continuous Drain Current, @ Tc = 25
ID
0.75
0.60
Continuous Drain Current, @ Tc = 100
ID
0.47
0.38
Pulsed Drain Current
IDM
3
2.4
Total Dissipation at TC = 25
Single Operation
Total Dissipation at TC = 25
Dual Operation
PTOT
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance Junction-ambient Max (Single Operating)
(Dual Operating)
Rthj-amb *
1.6
2
Unit
A
W
-65 to 150
62.5
78
/W
* Mounted on 0.5 in²pad of 2oz. copper.
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IC
IC
SMD Type
KTS1C1S250
Electrical Characteristics Ta = 25
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (VGS = 0)
Gate-body Leakage Current (VDS = 0)
Gate Threshold Voltage
Static Drain-source On Resistance
Input Capacitance
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
Rise Time
Total Gate Charge
Rg
td(on)
tr
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed) *1
2
V(BR)DSS
Output Capacitance
Gate Input Resistance
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Testconditons
Symbol
td(off)
tf
ISD
ISDM
ID = 250
A, VGS = 0
ID = 250
A, VGS = 0
Min
N-Ch
250
P-Ch
250
Typ
Max
Unit
V
V
N-Ch
1
A
VDS = Max Rating
P-Ch
1
A
VDS = Max Rating, TC = 125
N-Ch
10
A
P-Ch
10
A
VGS =
20V
N-Ch
10
A
P-Ch
10
A
VDS = VGS, ID = 250 A
N-Ch
2
3
4
V
VDS = VGS, ID = 250 A
P-Ch
2
3
4
V
VGS = 10V, ID = 0.40A
N-Ch
0.9
1.4
VGS = 10V, ID = 0.30A
P-Ch
2.1
2.8
N-Ch
325
N-Channel
P-Ch
260
pF
pF
VDS = 25V, f = 1 MHz, VGS = 0
N-Ch
51
pF
P-Channel
P-Ch
52
pF
VDS = 25V, f = 1 MHz, VGS = 0
N-Ch
24
pF
P-Ch
25.5
pF
f=1 MHz Gate DC Bias=0 Test
Signal Level=20mV Open Drain
N-Ch
6
P-Ch
6
N-Channel
N-Ch
9
ns
P-Ch
12
ns
N-Ch
11
ns
ns
VDD=125V,ID=1.5A,RG=4.7 , VGS =
10V
P-Channel
VDD=125V,ID=1.5A,RG=4.7 ,
VGS=10V
N-Channel
P-Ch
22
N-Ch
15
20
nC
VDD =200V, ID=1.5A,VGS = 10V
P-Ch
16
21
nC
N-Ch
1.9
nC
P-Channel
P-Ch
1.4
nC
VDD = 200V, ID= 1.5A,VGS = 10V
N-Ch
7
nC
P-Ch
7.6
nC
N-Channel
N-Ch
31
ns
VDD = 125V, ID = 1.5A,RG = 4.7 ,
VGS = 10V
P-Ch
29.5
ns
P-Channel
N-Ch
11
ns
VDD = 200V, ID = 1.5A,RG = 4.7 ,
VGS = 10V
P-Ch
7
ns
N-Ch
0.75
A
P-Ch
0.6
A
N-Ch
3
A
P-Ch
2.4
A
IC
IC
SMD Type
KTS1C1S250
Electrical Characteristics Ta = 25
Parameter
Forward On Voltage *2
VSD
trr
Reverse Recovery Time
Reverse Recovery Charge
Qrr
Reverse Recovery Curren
IRRM
Gate-Source Breakdown Voltage
*1 Pulsed: Pulse duration = 300
Testconditons
Symbol
BVGSO
ISD = 3A, VGS = 0
Min
Typ
N-Ch
ISD = 3A, VGS = 0
P-Ch
N-Channel
N-Ch
127
ISD = 0.8A, di/dt = 100A/
s,
VDD = 50V, Tj = 150
P-Channel
ISD = 0.60A, di/dt = 100A/
s,
VDD = 40V, Tj = 150
Igs=
500
A (Open Drain)
Max
Unit
1.5
V
1.5
V
ns
P-Ch
143
ns
N-Ch
450
nC
P-Ch
806
nC
N-Ch
7
A
P-Ch
11
25
A
V
s, duty cycle 1.5 %.
*2 Pulse width limited by safe operating area
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