isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line (220V mains) switching power supplies for consumer applications like sets VCR’s and monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage(VBE= -2.5V) 1000 V VCES Collector-Emitter Voltage(VBE=0) 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 3 A IBM Base Current-Peak 6 A PD Total Power Dissipation@TC=25℃ 70 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Rresistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.78 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; L= 25mH VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.1A IC= 1 A ;IB= 0.1A ;TC=125℃ 0.5 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.4 A IC= 2A ;IB= 0.4 A ;TC=125℃ 0.45 0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A 0.75 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.1 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.25 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5 A 1.3 V ICES Collector Cutoff Current VCE= 1000V;VBE= 0 VCE= 1000V;VBE= 0;TC=125℃ 0.01 0.1 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2.5V IC= 1A ; VCE= 2.5V;TC=125℃ 12 hFE-2 DC Current Gain IC= 1A ; VCE= 5V IC= 1A ; VCE= 5V;TC=125℃ 15 hFE-3 DC Current Gain IC= 2A ; VCE= 1V IC= 2A ; VCE= 1V;TC=125℃ 6 hFE-4 DC Current Gain IC= 5mA; VCE= 5V 10 450 UNIT V B B B 25 45 28 12 Switching Times; Resistive Load ton Turn-on Time tS Storage Time tf Turn-off Time isc Website：www.iscsemi.cn VCC=250V ,IC=2.5A IB1= 0.5A;IB2= -1A 0.5 1 μs 1.5 2.5 μs 0.18 0.3 μs