Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC2295 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High transition frequency fT. 1 0.55 Optimum for RF amplification of FM/AM radios. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and +0.05 0.1-0.01 +0.1 0.97-0.1 automatic insertion through the tape packing and the magazine 0-0.1 +0.1 0.38-0.1 packing. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector cutoff current ICBO VCB = 10 V, IE = 0 Forward current transfer ratio hFE VCB = 10 V, IC = -1 mA 70 100 Typ Max Unit 0.1 ìA 220 Transition frequency fT VCB = 10 V, IE = -1 mA, f = 200 MHz Noise figure NF VCB = 10 V, IE = -1 mA, f = 5 MHz 2.8 4.0 dB Reverse transfer impedance Zrb VCB = 10 V, IE = -1 mA, f = 2 MHz 22 50 Ù Reverse transfer capacitance Cre VCB = 10 V, Ic = -1 mA, f = 10.7 MHz 0.9 1.5 pF 250 MHz hFE Classification Marking VB VC hFE 70 140 110 220 www.kexin.com.cn 1