Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 150N15P IXFK 150N15P VDSS = 150 V ID25 = 150 A Ω RDS(on) ≤ 13 mΩ N-Channel Enhancement Mode TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 150 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 150 A ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 340 A IAR TC = 25°C 60 A EAR TC = 25°C 80 mJ EAS TC = 25°C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 714 W -55 ... +175 °C TJM 175 °C Tstg -55 ... +175 °C 300 °C G TJ ≤ 175°C, RG = 4 Ω PD TC = 25°C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-3P TO-264 1.13/10 Nm/lb.in. 5.5 10 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) 150 TJ = 175°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved V 5.0 V ±100 nA 25 500 µA µA 13 mΩ (TAB) S TO-264(SP) (IXTK) G D D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z z z g g Characteristic Values Min. Typ. Max. 3.0 D International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density DS99328(02/05) IXFH 150N15P IXFK 150N15P TO-247 AD Outline Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 55 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 80 S 5800 pF 1730 pF 400 pF 30 ns 33 ns 100 ns 28 ns 190 nC 40 nC 105 nC C rss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 td(off) RG = 3.3 Ω (External) tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-247 0.21 K/W RthCK TO-264 0.15 K/W Source-Drain Diode Test Conditions IS VGS = 0 V 150 A ISM Repetitive 340 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V 3 2 - Drain Tab - Drain Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol 2 Terminals: 1 - Gate 3 - Source 0.21 K/W RthCK QRM 1 TO-264 Outline 150 n s 0.8 µC Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S Millimeter Min. Max. Min. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 IXTK 150N15P IXTQ 150N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 330 150 VGS = 10V 9V 8V 120 270 9V 240 I D - Amperes 7V I D - Amperes VGS = 10V 300 90 6V 60 210 180 8V 150 120 7V 90 30 60 5V 6V 30 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characteristics @ 150ºC 6 7 8 9 10 2.8 VGS = 10V 9V 8V 2.6 VGS = 10V 2.4 90 R D S ( o n ) - Normalized 120 I D - Amperes 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Te m perature 150 7V 60 6V 30 2.2 2 I D = 150A 1.8 1.6 I D = 75A 1.4 1.2 1 0.8 5V 0 0.6 0 1 2 3 4 5 -50 -25 0 V D S - Volts 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3.4 90 TJ = 175ºC 3.1 2.8 70 2.5 60 2.2 External Lead Current Limit 80 I D - Amperes R D S ( o n ) - Normalized 4 V D S - Volts V D S - Volts VGS = 10V 1.9 VGS = 15V 1.6 50 40 30 20 1.3 10 1 TJ = 25ºC 0 0.7 0 50 100 150 200 I D - Amperes © 2005 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 150N15P IXFK 150N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 110 225 100 200 90 80 g f s - Siemens I D - Amperes 175 150 125 100 75 TJ = 150ºC 50 25ºC TJ = -40ºC 60 50 25ºC 40 150ºC 30 20 -40ºC 25 70 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 8.5 25 50 75 V G S - Volts Fig. 9. Source Curre nt vs. Source -To-Drain Voltage Fig. 10. Gate Charge 350 10 VDS = 75V 9 300 I D = 75A 8 I G = 10mA 7 VG S - Volts I S - Amperes 250 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 20 40 V S D - Volts 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Are a Fig. 11. Capacitance 100,000 1000 f = 1MHz TJ = 175ºC R DS(on) Limit I D - Amperes Capacitance - picoFarads 100 125 150 175 200 225 250 I D - Amperes Ciss 10,000 Coss TC = 25ºC 25µs 100µs 100 1ms 1,000 10ms Crss DC 10 100 0 5 10 15 20 25 V DS - Volts 30 35 40 10 100 V D S - Volts 1000 IXFH 150N15P IXFK 150N15P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2005 IXYS All rights reserved 1000