UNITPOWER UM9926

UM9926
N-Ch 20V Fast Switching MOSFETs
General Description
Product Summery
The UM9926 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM9926 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
38mΩ
20V
6.5A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
D1
D1
D2
D2
8
7
6
5
1
2
3
S1
G1 S 2
z 100% EAS Guaranteed
z Green Device Available
S O-8
1
Absolute Maximum Ratings
S ymbol
Limit
Unit
Drain-S ource Voltage
V DS
20
V
Gate-S ource Voltage
V GS
10
V
P arameter
Drain C urrent-C ontinuous a @ T J =25 C
b
-P ulsed
ID
6.5
A
IDM
30
A
Drain-S ource Diode Forward C urrent a
IS
1.7
A
Maximum P ower Dissipation a
PD
2
W
T J , T S TG
-55 to 150
C
Operating Junction and S torage
Temperature R ange
Thermal Data
Thermal R esistance, Junction-to-Ambient a
R JA
1
62.5
C /W
4
G2
UM9926
N-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Parameter
Min Typ C Max Unit
S ymbol
Condition
Drain-S ource Breakdown Voltage
BV DS S
V GS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDS S
V DS = 16V, V GS = 0V
1
uA
Gate-Body Leakage
IGS S
V GS = 10V,V DS = 0V
10
uA
Gate Threshold Voltage
V GS (th)
V DS = V GS , ID = 250uA
0.9
1.5
V
Drain-S ource On-S tate R esistance
R DS (ON)
V GS = 4.0V, ID = 6.5A
23
28
m ohm
V GS = 2.5V, ID = 5A
30
38
m ohm
V DS = 5.0V, ID = 6.5A
16
S
540
PF
160
PF
100
PF
15
ns
20
ns
36
ns
11
ns
V DS =10V, ID =6.5A,V GS =4V
6.4
nC
V DS =10V, ID =6.5A,V GS =2.5V
4.6
nC
1.1
nC
2.8
nC
OFF CHAR ACTE R IS TICS
20
V
ON CHAR ACTE R IS TICS b
gFS
Forward Transconductance
0.5
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance
C IS S
Output Capacitance
C OS S
R everse Transfer Capacitance
CRSS
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
V DS =8V, V GS = 0V
f =1.0MH Z
c
tD(ON)
V DD = 10V,
ID = 1A,
V GE N = 4.5V,
R L = 10 ohm
R GE N = 10 ohm
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Q gs
Gate-Drain Charge
Q gd
V DS =10V, ID = 6.5 A
V GS =4V
S ymbol
Condition
Parameter
C
Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage
VSD
V GS = 0V, Is =1.7A
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
2
0.72
1.2
V
UM9926
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
20
15
V G S =8V
V G S =3V
12
V G S =2.5V
I D , Drain C urrent (A)
ID , Drain C urrent(A)
16
V G S =2V
12
8
4
V G S =1.5V
0
0
0.5
1.5
1.0
2.0
2.5
9
6
T j=125 C
3
V DS , Drain-to-S ource Voltage (V )
R DS (ON) , On-R es is tance
Normalized
R DS (on) (m W)
1.2
1.6
2.0
2.4
1.5
50
40
V G S =2.5V
30
20
V G S =4V
10
1
4
8
12
16
20
1.4
1.2
1.1
0
1.0
0.8
0.6
0.4
0.2
25
50
75
25
75
50
100
150
125
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V DS =V G S
I D =250uA
0
0
T j, J unction T emperature ( C )
1.4
-50 -25
V G S =2.5V
I D =5A
1.0
I D , Drain C urrent (A)
1.2
V G S =4V
I D =6.5A
1.3
T j( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
0.8
F igure 2. Trans fer C haracteris tics
60
0.0
0.4
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1
25 C
0
0.0
3.0
-55 C
100 125 150
1.20
I D =250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25
50
75
100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
60
I D =6.5A
Is , S ource-drain current (A)
R DS (on) (m W)
50
40
25 C
30
20
125 C
75 C
10
0
0
1
2
4
6
5.0
25 C
75 C
1.0
8
V G S , G ate-S ource Voltage (V )
125 C
10.0
0
0.3
0.6
0.9
1.2
1.5
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
3
UM9926
N-Ch 20V Fast Switching MOSFETs
Typical Characteristics
V G S , G ate to S ource V oltage (V )
600
C is s
C , C apacitance (pF )
500
6
400
300
C os s
200
C rs s
100
5
V DS =10V
I D =6.5A
4
3
2
1
0
0
0
2
4
8
6
10
0
12
1
4
5
6
7
8
Qg, T otal G ate C harge (nC )
V DS , Drain-to S ource Voltage (V )
F igure 10. G ate C harge
F igure 9. C apacitance
50
600
Tr
100
60
TD(off)
I D , Drain C urrent (A)
S witching T ime (ns )
3
2
TD(on)
Tf
10
V DS =10V ,ID=1A
1
30
10
R
60 100 300 600
im
it
10
10
0m
ms
s
DC
1
0.1
0.03
6 10
)L
1s
V G S =4.5V
1
D
ON
S(
V G S =10V
S ingle P ulse
T A =25 C
0.1
R g, G ate R es is tance ( W)
1
10
60
V DS , Drain-S ource V oltage (V )
F igure 12. Maximum S afe
O perating Area
F igure 11.s witching characteris tics
Thermal Resistance
Normalized Transient
9
1
0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
on
0.01
Single Pulse
0.01
0.00001
1.
2.
3.
4.
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
4
10
t2
R thJ A (t)=r (t) * R thJ A
R thJ A =S ee Datas heet
T J M-T A = P DM* R thJ A (t)
Duty C ycle, D=t1/t2
100
1000