ECH8667 Ordering number : ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8667 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)1=30mΩ(typ.) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit --30 V ±20 V --5.5 A --40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (900mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C PW≤10μs, duty cycle≤1% Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.25 Top View Packing Type : TL 2.9 Marking 0.15 8 5 TN 2.3 4 1 0.65 0.9 0.25 LOT No. TL Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 SANYO : ECH8 http://semicon.sanyo.com/en/network 72110PE TK IM TC-00002432 No. A1778-1/4 ECH8667 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--30V, VGS=0V typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--2.5A 5.2 RDS(on)1 ID=--2.5A, VGS=--10V 30 39 mΩ RDS(on)2 ID=--1.5A, VGS=--4.5V 55 77 mΩ RDS(on)3 ID=--1.5A, VGS=--4V 58 82 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 600 pF Output Capacitance Coss VDS=--10V, f=1MHz 145 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 110 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 7.2 ns See specified Test Circuit. 23 ns See specified Test Circuit. 63 ns Fall Time td(off) tf See specified Test Circuit. 42 ns Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--5.5A 13 nC 1.8 nC 3.2 nC Static Drain-to-Source On-State Resistance Rise Time Turn-OFF Delay Time --1.2 Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--15V, VGS=--10V, ID=--5.5A VDS=--15V, VGS=--10V, ID=--5.5A Diode Forward Voltage VSD IS=--5.5A, VGS=0V --1 μA ±10 μA --2.6 V S --0.82 --1.2 V Switching Time Test Circuit 0V --10V VIN VDD= --15V ID= --2.5A RL=6Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8667 .0 V VDS= --10V --8 --3 --1.5 --1.0 VGS= --2.5V --6 --5 --4 --3 --2 --0.5 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14855 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 25° C V -4.5 --7 Drain Current, ID -- A --4.0V V --3. 5V --10.0V --2.0 ID -- VGS --9 --6.0 Drain Current, ID -- A --2.5 S ID -- VDS --18.0V --3.0 50Ω Ta= 75° C --25 °C P.G --3.0 --3.5 Gate-to-Source Voltage, VGS -- V --4.0 IT14856 No. A1778-2/4 ECH8667 RDS(on) -- VGS Ta=25°C 120 100 80 60 40 20 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 7 3 1.0 7 25 °C 5 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A --40 --20 0 20 40 60 80 100 120 5 VGS=0V --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 f=1MHz 1000 2 tr 10 td(on) 7 Ciss 5 3 2 Coss Crss 100 5 VDD= --15V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 5 7 --10 2 IT14861 Drain Current, ID -- A VGS -- Qg --10 --100 7 5 3 2 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT14863 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --6A --9 --1.2 IT14860 Ciss, Coss, Crss -- VDS 2 3 3 --0.1 160 IT15728 Diode Forward Voltage, VSD -- V tf 7 140 IS -- VSD --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns .5A = --2 0V, I D --10. td(off) 7 Gate-to-Source Voltage, VGS -- V 5 7 1.5A 20 IT14859 SW Time -- ID 100 = VGS 30 2 10 °C -25 =a T °C 75 40 = -, ID 4.5V Ambient Temperature, Ta -- °C VDS= --10V 2 = -VGS 50 IT15727 | yfs | -- ID 2 4 = -V GS 60 10 --60 --16 A 1.5 = -, ID V 0 . 70 5°C 0 80 C --3.0A Ta= 7 140 90 --25 ° ID= --1.5A 160 25°C 180 0 RDS(on) -- Ta 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --30 IT14862 ASO IDP= --40A (PW≤10μs) 10 0μ 1m s ID= --5.5A s 10m DC s 100 ms ope rat ion Operation in this area is limited by RDS(on). (Ta =2 5°C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15729 No. A1778-3/4 ECH8667 PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.3 1.2 To t al 1.0 0.8 Di ss 1u nit ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15730 Note on usage : Since the ECH8667 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice. PS No. A1778-4/4