LED - Chip ELС-525-31 Preliminary 10.04.2007 rev. 01/07 Radiation Type Technology Electrodes Green Standard InGaN/Al2O3 Both on top side typ. dimensions (±25) µm 1000 P typ. thickness 90 (±10) µm contact metalization gold alloy, 1.5 µm N backside metalization N aluminium alloy, 1.0 µm P Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Test Parameter conditions Symbol Min Typ Max Unit Forward voltage IF = 20 mA VF 2.5 3.1 V Forward voltage1 IF = 350 mA VF 3.19 3.7 V Reverse voltage IR = 10 µA VR 5 Luminous intensity1) IF = 20 mA ΙV 1300 1500 mcd Luminous intensity1) IF = 350 mA ΙV 12000 14000 mcd Peak wavelength IF = 20 mA λP 524 nm Dominant wavelength IF = 350 mA λD Spectral bandwidth at 50% IF = 20 mA ∆λ0.5 35 nm Switching time IF = 20 mA tr, tf 10 ns 515 V 525 535 nm 1) Measured on bare chip on TO-18 header with EPIGAP equipment Labeling Type Lot N° Ιv(typ) [mcd] VF(typ) [V] Quantity ELС-525-31 Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1