GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMT thermistor (NTC) • Aluminum oxide DBC MTP • Very low stray inductance design for high speed operation • Short circuit 10 μs • Square RBSOA • Operating frequencies 8 kHz to 60 kHz • UL approved file E78996 PRODUCT SUMMARY • Compliant to RoHS directive 2002/95/EC VCES 1200 V VCE(on) typical at VGE = 15 V 2.51 V IC at TC = 100 °C 15 A tsc at TJ = 150 °C > 10 μs • Designed and qualified for industrial level BENEFITS • Optimized for inverter motor drive applications • Low EMI, requires less snubbing • Direct mounting to heatsink • PCB solderable terminals • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS TC = 25 °C TC = 100 °C MAX. UNITS 1200 V 30 15 Pulsed collector current ICM 60 Peak switching current ILM 60 Diode continuous forward current IF A TC = 100 °C 15 Peak diode forward current IFM 30 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation (including diode and IGBT) Document Number: 93913 Revision: 03-Aug-10 PD V Any terminal to case, t = 1 min 2500 TC = 25 °C 187 TC = 100 °C 75 W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Temperature coefficient of V(BR)CES Collector to emitter voltage Gate threshold voltage V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) TEST CONDITIONS MIN. TYP. MAX. 1200 - - V VGE = 0 V, IC = 1 mA - 1.11 - V/°C VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 15 A - 2.51 2.70 VGE = 15 V, IC = 30 A - 3.36 3.66 UNITS V VGE = 15 V, IC = 15 A, TJ = 125 °C - 2.94 3.16 VGE = 15 V, IC = 30 A, TJ = 125 °C - 4.12 4.46 IC = 250 μA 4 - 6 - - 10 - mV/°C S Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 1 mA Forward transconductance gfe VCE = 25 V, IC = 15 A - 12 - VGE = 0 V, VCE = 1200 V - - 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - - 1000 IF = 15 A, VGE = 0 V - 2.13 2.58 IF = 30 A, VGE = 0 V - 2.70 3.33 IF = 15 A, VGE = 0 V, TJ = 125 °C - 2.27 2.75 IF = 30 A, VGE = 0 V, TJ = 125 °C - 3.06 3.76 VGE = ± 20 V - - ± 250 nA MIN. TYP. MAX. UNITS 98 146 Collector to emitter leaking current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Total gate charge (turn-on) Qg IC = 15 A - Gate to emitter charge (turn-on) Qge 12 17 Qgc VCC = 600 V VGE = 15 V - Gate to collector charge (turn-on) - 46 69 Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time IC = 15 A, VCC = 600 V, VGE = 15 V Rg = 10 , L = 500 μH, TJ = 25 °C Energy losses include tail and diode reverse recovery IC = 15 A, VCC = 600 V, VGE = 15 V Rg = 10 , L = 500 μH, TJ = 125 °C Energy losses include tail and diode reverse recovery IC = 15 A, VCC = 600 V, VGE = 15 V L = 500 μH, LS = 100 nH Rg = 10 , TJ = 125 °C tf Reverse BIAS safe operating area RBSOA TJ = 150 °C, IC = 60 A Rg = 10 , VGE = 15 V to 0 Short circuit safe operating area SCSOA VCC = 600 V, VGE = + 15 V to 0 TJ = 150 °C, VP = 1200 V, Rg = 10 Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery energy Erec Diode reverse recovery time trr Diode peak reverse current Irr www.vishay.com 2 VGE = 0 V VCC = 30 V f = 1 MHz IC = 15 A, VCC = 600 V, VGE = 15 V L = 500 μH, LS = 100 nH Rg = 10 , TJ = 125 °C - 0.990 1.485 - 0.827 1.241 - 1.817 2.726 - 1.352 2.028 - 1.138 1.707 - 2.490 3.735 - 95 143 - 18 27 - 134 200 - 227 341 nC mJ mJ ns Fullsquare 10 - - μs - 1302 1953 - 717 1076 - 38 57 - 819 - μJ - 96 - ns - 35 - A For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] pF Document Number: 93913 Revision: 03-Aug-10 GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A THERMISTOR SPECIFICATIONS (T CODE ONLY) PARAMETER MIN. TYP. MAX. UNITS Resistance SYMBOL R0 (1) T0 = 25 °C TEST CONDITIONS - 30 - k Sensitivity index of the thermistor material (1)(2) T0 = 25 °C T1 = 85 °C - 4000 - K MIN. TYP. MAX. UNITS TJ - 40 - 150 TStg - 40 - 125 - - 1.1 - - 1.7 - 0.50 - - 0.1 - Notes (1) T , T are thermistor´s temperatures 0 1 R0 1 1 (2) ------- = exp ----- – ------ T R T 1 0 1 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case Diode RthJC Module Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK °C °C/W Mounting torque - - 4 Nm Weight - 65 - g 60 60 Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V Vge=18V Vge=15V Vge=12V Vge=10V Vge=8V 40 Ice (A) Ice (A) 40 20 20 0 0 0 2 4 Vce (V) Fig. 1 - Typical Output Characteristics TJ = 25 °C Document Number: 93913 Revision: 03-Aug-10 6 0 2 4 6 Vce (V) Fig. 2 - Typical Output Characteristics TJ = 125 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 1000 20 tF Ice=7.5A Ice=15A Ice=30A tdOFF Swiching Time (ns) Vce (V) 15 10 5 100 tdON 10 tR 1 0 5 10 15 5 20 10 15 Vge (V) 25 30 Fig. 6 - Typical Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCE = 600 V Rg = 10 ; VGE = 15 V Fig. 3 - Typical VCE vs. VGE TJ = 25 °C 4 20 ETOT Ice=7.5A Ice=15A Ice=30A 3 Energy (mJ) 15 Vce (V) 20 Ic (A) 10 EON 2 EOFF 1 5 0 0 5 10 15 20 0 10 20 Vge (V) 30 Rg ( ) 40 50 Fig. 7 - Typical Energy Loss vs. Rg TJ = 125 °C, L = 500 μH, VCE = 600 V IC = 15 A; VGE = 15 V Fig. 4 - Typical VCE vs. VGE TJ = 125 °C 4500 1000 ETOT 2500 Swiching Time (ns) Energy (mJ) 3500 EOFF EON 1500 tF tdOFF 100 tdON tR 10 500 5 15 25 Ic (A) Fig. 5 - Typical Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCE = 600 V Rg = 10 ; VGE = 15 V www.vishay.com 4 35 0 10 20 30 40 50 Rg ( ) Fig. 8 - Typical Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCE = 600 V IC = 15 A; VGE = 15 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93913 Revision: 03-Aug-10 GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 10000 120 Coes Ptot (W) Capacitance (pF) 90 Cies 1000 60 100 30 Cres 10 0 0 10 20 30 0 40 40 80 Tc (°C) Vce (V) 120 160 Fig. 12 - Power Dissipation vs. Case Temperature (IGBT only) Fig. 9 - Typical Capacitance vs. VCE VGE = 0 V; f = 1 MHz 16 100 600V 12 10 20 µs Ic (A) VGE (V) 100 µs 8 1 1 ms 4 10 ms 0.1 0 DC 0.01 0 20 40 60 80 QG, Total Gate Charge (nC) 100 1 10 100 1000 10000 Vce (V) Fig. 13 - Forward SOA TC = 25 °C, TJ 150 °C Fig. 10 - Typical Gate Charge vs. VGE ICE = 15 A 100 32 Ic (A) Ic (A) 24 10 16 8 1 0 0 40 80 Tc (°C) 120 160 Fig. 11 - Maximum DC Collector Current vs. Case Temperature Document Number: 93913 Revision: 03-Aug-10 10 100 1000 10000 Vce (V) Fig. 14 - Reverse BIAS SOA TJ = 150 °C, VGE = 15 V For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A 160 55 Rg=4.7Ω Tj = 25°C Tj = 125°C Irr (A) Ice (A) 120 Rg=10Ω 45 80 Rg=22Ω 35 25 Rg=47Ω 40 15 0 5 0 4 8 12 16 5 10 Vge (V) 15 20 25 30 35 If (A) Fig. 15 - Typical Transfer Characteristics VCE = 50 V; tp = 10 μs Fig. 17 - Typical Diode Irr vs. IF TJ = 125 °C 50 45 40 Tj = 25°C Tj = 125°C 40 Irr (A) If (A) 35 30 30 20 25 10 20 0 15 0 1 2 3 0 4 10 Vf (V) Fig. 16 - Typical Diode Forward Characteristics tp = 80 μs 20 30 Rg ( ) 40 50 Fig. 18 - Typical Diode Irr vs. Rg TJ = 125 °C; IF = 10 A 45 40 Irr (A) 35 30 25 20 15 400 550 700 850 1000 1150 1300 dif/dt (A/µs) Fig. 19 - Typical Diode Irr vs. dIF/dt; VCC = 600 V; VGE = 15 V; ICE = 10 A, TJ = 125 °C www.vishay.com 6 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93913 Revision: 03-Aug-10 GB15XP120KTPbF Three Phase Inverter Module in MTP Package Vishay Semiconductors 1200 V NPT IGBT and HEXFRED® Diodes, 15 A Thermal Response (ZthJC) 10 1 0.5 0.3 0.1 0.1 R1 R1 0.05 τJ τ1 0.02 0.01 0.01 R2 R2 τ2 τ1 τ2 τ3 τ3 Ci= τi/Ri Ci i/Ri SINGLE PULSE (THERMAL RESPONSE) 0.001 1E-05 Ri (°C/W) τi (sec) 0.000547 0.196 0.025615 0.515 0.037176 0.389 R3 R3 1E-04 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc 1E-03 1E-02 t1 , Rectangular Pulse Duration (sec) 1E-01 1E+00 Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Thermal Response (ZthJC) 10 1 0.5 0.3 0.1 0.1 R1 R1 0.05 τJ τ1 0.02 0.01 τ2 τ2 R3 R3 τ3 Ri (°C/W) τi (sec) 0.001245 0.390 0.03327 1.023 0.052639 0.287 τ3 Ci= τi/Ri Ci i/Ri 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.001 1E-05 τ1 R2 R2 1E-04 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + tc 1E-03 1E-02 t1 , Rectangular Pulse Duration (sec) 1E-01 1E+00 Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode) Document Number: 93913 Revision: 03-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 7 GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 15 A ORDERING INFORMATION TABLE Device code GB 15 XP 120 K T PbF 1 2 3 4 5 6 7 1 - IGBT module 2 - Nominal current rating (15 = 15 A) 3 - Circuit configuration (XP = Three phase inverter) 4 - Voltage code (120 = 1200 V) 5 - Speed/type (K = Ultrafast IGBT/inverter motor drive application) 6 - Special option: None = No special option T = Thermistor - 7 PbF = Lead (Pb)-free CIRCUIT CONFIGURATION 13 7 5 3 8 6 4 9 10 11 1 2 12 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 www.vishay.com/doc?95175 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 93913 Revision: 03-Aug-10 Outline Dimensions Vishay Semiconductors MTP Ø 1.1 20.5 12 ± 0.5 2.5 4 Ø5 3.5 DIMENSIONS in millimeters 31.8 33 2 8 7 6 5 4 3 1 13 9 10 11 1.8 12 8.1 1.2 ± 0.1 7.2 ± 0.1 7.8 ± 0.1 R2.6 (x 3) 5.7 ± 0.1 11.35 ± 0.1 5.4 ± 0.1 11.35 ± 0.1 27.5 3 ± 0.1 45° 8.7 ± 0.1 R5.8 (x 2) 8.5 ± 0.1 6 ± 0.1 3 ± 0.1 39.5 ± 0.1 44.5 48.7 1.3 63.5 ± 0.25 Note • Unused terminals are not assembled in the package Document Number: 95175 Revision: 18-Mar-08 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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