IXYS IXFX44N80P

PolarHVTM HiPerFET
Power MOSFET
IXFK 44N80P
IXFX 44N80P
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
44
100
A
A
IAR
EAR
EAS
TC = 25°C
TC = 25°C
TC = 25°C
22
80
3.4
A
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
10
V/ns
PD
TC = 25°C
1040
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TO-264 (IXFK)
G
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
(IXFK)
FC
Mounting force
(IXFX)
Weight
(IXFK)
(IXFX)
1.13.10 Nm/lb.in.
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
20..120 /4.5..25
N/lb
10
5
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 800 μA
800
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
= 800
V
= 44
A
Ω
≤ 190 mΩ
≤ 250
ns
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25, Note 1
© 2006 IXYS All rights reserved
V
5.0
V
± 200
nA
50
1.5
μA
mA
190
mΩ
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
Fast intrinsic diode
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99478E(01/06)
IXFK 44N80P
IXFX 44N80P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20 V; ID = 0.5 ID25, Note 1
27
Ciss
43
S
12
nF
910
pF
Crss
30
pF
td(on)
28
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
22
ns
td(off)
RG = 1 Ω (External)
75
ns
27
ns
198
nC
67
nC
65
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
TO-264 (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
0.12°C/W
RthCS
°C/W
0.15
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
44
A
ISM
Repetitive
100
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 22 A, -di/dt = 100 A/μs
250
ns
QRM
VR = 100 V, VGS = 0 V
IRM
0.8
μC
8.0
A
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS 247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXFK 44N80P
IXFX 44N80P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25° C
@ 25° C
100
45
VGS = 10V
40
7V
80
35
70
6V
30
I D - Amperes
I D - Amperes
VGS = 10V
90
7V
25
20
15
5V
60
6V
50
40
30
10
20
5
10
5V
0
0
0
1
2
3
4
5
6
7
0
8
3
6
9
V D S - Volts
18
21
24
27
30
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
@ 125° C
2.6
45
VGS = 10V
40
2.4
VGS = 10V
R D S ( o n ) - Normalized
7V
35
6V
I D - Amperes
15
V D S - Volts
Fig. 3. Output Characteristics
30
25
20
5V
15
10
5
2.2
2.0
1.8
I D = 44A
1.6
I D = 22A
1.4
1.2
1.0
0.8
0.6
0
0
2
4
6
8
10
12
14
-50
16
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
2.4
50
VGS = 10V
2.2
TJ = 125°C
45
40
2
I D - Amperes
R D S ( o n ) - Normalized
12
1.8
1.6
1.4
35
30
25
20
15
1.2
TJ = 25°C
10
1
5
0.8
0
0
10
20
30
40
50
60
I D - Amperes
© 2006 IXYS All rights reserved
70
80
90
100
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFK 44N80P
IXFX 44N80P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
70
90
80
60
TJ = - 40°C
70
g f s - Siemens
I D - Amperes
50
TJ = 125°C
40
25°C
- 40°C
30
25°C
60
125°C
50
40
30
20
20
10
10
0
0
3.5
4
4.5
5
5.5
6
0
6.5
10
20
30
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
50
60
70
80
150
175
200
Fig. 10. Gate Charge
10
140
9
VDS = 400V
8
I D = 22A
7
I G = 10mA
120
VG S - Volts
100
I S - Amperes
40
I D - Amperes
80
60
40
6
5
4
3
TJ = 125°C
2
TJ = 25°C
20
1
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
0
25
V S D - Volts
50
75
100
125
Q G - NanoCoulombs
Fig. 13. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
1.00
100000
C iss
10000
R( t h ) J C - ºC / W
Capacitance - PicoFarads
f = 1MHz
C oss
1000
100
0.10
0.01
C rss
10
0.00
0
5
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10