PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 44 100 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 22 80 3.4 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω 10 V/ns PD TC = 25°C 1040 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TO-264 (IXFK) G TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (IXFK) FC Mounting force (IXFX) Weight (IXFK) (IXFX) 1.13.10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C unless otherwise specified) 20..120 /4.5..25 N/lb 10 5 g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 800 μA 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) = 800 V = 44 A Ω ≤ 190 mΩ ≤ 250 ns TJ = 125°C VGS = 10 V, ID = 0.5 ID25, Note 1 © 2006 IXYS All rights reserved V 5.0 V ± 200 nA 50 1.5 μA mA 190 mΩ D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99478E(01/06) IXFK 44N80P IXFX 44N80P Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, Note 1 27 Ciss 43 S 12 nF 910 pF Crss 30 pF td(on) 28 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 1 Ω (External) 75 ns 27 ns 198 nC 67 nC 65 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC TO-264 (IXFK) Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 0.12°C/W RthCS °C/W 0.15 Source-Drain Diode Characteristic Values TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 22 A, -di/dt = 100 A/μs 250 ns QRM VR = 100 V, VGS = 0 V IRM 0.8 μC 8.0 A Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. A A1 A2 b b1 b2 C D E e L L1 Q R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXFK 44N80P IXFX 44N80P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25° C @ 25° C 100 45 VGS = 10V 40 7V 80 35 70 6V 30 I D - Amperes I D - Amperes VGS = 10V 90 7V 25 20 15 5V 60 6V 50 40 30 10 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125° C 2.6 45 VGS = 10V 40 2.4 VGS = 10V R D S ( o n ) - Normalized 7V 35 6V I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 30 25 20 5V 15 10 5 2.2 2.0 1.8 I D = 44A 1.6 I D = 22A 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 -50 16 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 2.4 50 VGS = 10V 2.2 TJ = 125°C 45 40 2 I D - Amperes R D S ( o n ) - Normalized 12 1.8 1.6 1.4 35 30 25 20 15 1.2 TJ = 25°C 10 1 5 0.8 0 0 10 20 30 40 50 60 I D - Amperes © 2006 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFK 44N80P IXFX 44N80P Fig. 8. Transconductance Fig. 7. Input Adm ittance 70 90 80 60 TJ = - 40°C 70 g f s - Siemens I D - Amperes 50 TJ = 125°C 40 25°C - 40°C 30 25°C 60 125°C 50 40 30 20 20 10 10 0 0 3.5 4 4.5 5 5.5 6 0 6.5 10 20 30 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 50 60 70 80 150 175 200 Fig. 10. Gate Charge 10 140 9 VDS = 400V 8 I D = 22A 7 I G = 10mA 120 VG S - Volts 100 I S - Amperes 40 I D - Amperes 80 60 40 6 5 4 3 TJ = 125°C 2 TJ = 25°C 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 25 V S D - Volts 50 75 100 125 Q G - NanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance Fig. 11. Capacitance 1.00 100000 C iss 10000 R( t h ) J C - ºC / W Capacitance - PicoFarads f = 1MHz C oss 1000 100 0.10 0.01 C rss 10 0.00 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10