IXYS IXFX48N60P

PolarHVTM HiPerFET
Power MOSFET
IXFK 48N60P
IXFX 48N60P
VDSS
ID2
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
VDSS
TJ = 25° C to 150° C
600
V
VDGR
TJ = 25° C to 150° C; RGS = 1 MΩ
600
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25° C
48
A
IDM
TC = 25° C, pulse width limited by TJM
110
A
IAR
TC = 25° C
48
A
EAR
TC = 25° C
70
mJ
EAS
TC = 25° C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 4 Ω
20
V/ns
PD
Maximum Ratings
TJ
TJM
Tstg
Mounting torque (TO-264)
Weight
TO-264
PLUS247
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
TO-264 (IXFK)
G
D
(TAB)
S
PLUS247 (IXFX)
830
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
Tab = Drain
1.13/10 Nm/lb.in.
10
6
g
g
300
260
°C
°C
Features
l
l
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 µA
600
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
VGS = ±30 VDC, VDS = 0
l
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
TJ = 125° C
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
5.0
V
±200
nA
Advantages
l
l
© 2006 IXYS All rights reserved
600 V
48 A
Ω
135mΩ
200 ns
(TAB)
TC = 25° C
Md
=
=
≤
≤
25
1000
µA
µA
135
mΩ
l
Easy to mount
Space savings
High power density
DS99375E(02/06)
IXFK 48N60P IXFX 48N60P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 20 V; ID = 0.5 ID25, pulse test
53
S
8860
pF
850
pF
Crss
60
pF
td(on)
30
ns
Ciss
Coss
35
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 ID25
25
ns
td(off)
RG = 2 Ω (External)
85
ns
22
ns
150
nC
50
nC
50
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
0.15 ° C/W
RthJC
RthCs
TO-264 (IXFK) Outline
TO-264 and PLUS247
° C/W
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
48
A
ISM
Repetitive
110
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.8
6.0
PLUS 247TM (IXFX) Outline
µC
A
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXFK 48N60P IXFX 48N60P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25ºC
@ 25ºC
50
VGS = 10V
45
40
VGS = 10V
120
8V
7V
8V
100
I D - Amperes
I D - Amperes
35
30
25
6V
20
15
7V
80
60
40
6V
10
20
5
5V
5V
0
0
0
1
2
3
4
5
0
6
4
8
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
20
24
3.1
VGS = 10V
45
R D S ( o n ) - Normalized
35
6V
30
25
20
15
10
VGS = 10V
2.8
7V
40
I D - Amperes
16
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
50
5V
2.5
2.2
I D = 48A
1.9
1.6
I D = 24A
1.3
1
0.7
5
0.4
0
0
2
4
6
8
V D S - Volts
10
12
-50
14
25
50
75
100
125
150
50
45
VGS = 10V
3.1
0
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
3.4
-25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
TJ = 125ºC
2.8
40
35
2.5
I D - Amperes
R D S ( o n ) - Normalized
12
V D S - Volts
2.2
1.9
1.6
1.3
30
25
20
15
10
TJ = 25ºC
1
5
0.7
0
0
20
40
60
80
I D - Amperes
© 2006 IXYS All rights reserved
100
120
140
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFK 48N60P IXFX 48N60P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
100
80
90
70
80
50
g f s - Siemens
I D - Amperes
60
TJ = 125ºC
25ºC
-40ºC
40
30
20
70
60
50
TJ = -40ºC
40
25ºC
125ºC
30
20
10
10
0
0
4
4.5
5
5.5
6
6.5
7
0
10
20
30
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
50
60
70
80
90
140
160
Fig. 10. Gate Charge
10
160
140
120
100
VG S - Volts
I S - Amperes
40
I D - Amperes
80
60
VDS = 300V
8
I D = 24A
7
I G = 10mA
6
5
4
3
TJ = 125ºC
40
9
2
TJ = 25ºC
20
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
V S D - Volts
1.1
1.2
0
1.3
20
40
60
80
100
120
Q G - nanoCoulombs
Fig. 13. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
100000
1.00
C iss
10000
R( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
C oss
1000
100
0.10
C rss
0.01
10
0
5
10
15
20
25
30
35
40
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
Pulse Width - milliseconds
1000