SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and DC-DC Converter Applications. H T P D L G FEATURES A VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m (Max.) @VGS=10V RDS(ON)=42m (Max.) @VGS=4.5V 8 5 B1 B2 Super High Dense Cell Design 1 High Power and Current Handing Capability MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain Source Voltage VDSS 30 V Gate Source Voltage VGSS 20 V DC ID * 6 A Pulsed IDP 30 A IS 1.7 A PD * 2 W Tj 150 Tstg -50~150 RthJA* 62.5 Drain Current Drain Source Diode Forward Current Drain Power Dissipation 4 DIM A B1 B2 D G H L P T 25 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient FLP-8 KMB6D0DN 30QA /W Note> *Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) S1 1 8 D1 1 8 G1 2 7 D1 2 7 6 5 S2 3 6 D2 3 G2 4 5 D2 4 2008. 3. 21 Revision No : 1 1/5 KMB6D0DN30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) UNLESS OTHERWISE NOTED SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS ID=250 A, VGS=0V 30 - - V Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A Gate Leakage Current IGSS VGS= - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 1.7 2.5 VGS=10V, ID=6A - 24 28 VGS=4.5V, ID=5A - 35 42 VDS=5V, VGS=10V 20 - - A - 20 - S - 576 - - 111 - Drain-Source Breakdown Voltage 20V, VDS=0V RDS(ON)* Drain-Source ON Resistance ID(ON)* On-State Drain Current gfs* Forward Transconductance VDS=5V, ID=6A nA V m Dynamic Input Capacitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 75 - Total Gate Charge Qg* - 12.5 - Gate-Source Charge Qgs* - 2.0 - Gate-Drain Charge Qgd* - 2.8 - Turn-On Delay Time td(on)* - 7.8 - VDD=15V, VGS=10V - 11.6 - ID=1A, RG=6 - 15.3 - - 16 - - 0.75 1.2 tr* Turn-On Rise Time td(off)* Turn-Off Delay Time VDS=15V, f=1MHz, VGS=0V VDS=15V, VGS=10V, ID=2A tf* Turn-Off Fall Time pF nC ns Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage Note> * Pulse Test : Pulse width 2008. 3. 21 300 , Duty cycle Revision No : 1 IDR=1.7A, VGS=0V V 2% 2/5 KMB6D0DN30QA Fig2. RDS(on) - ID Drain Current ID (A) 10 8 VGS=10, 9, 8, 7, 6, 5, 4V 6 VGS=2.5V 4 2 VGS=1.5V 0 0 1.0 0.5 1.5 2.0 2.5 3.0 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 0.16 Common Source 0.14 Ta= 25 C Pulse Test 0.12 0.1 0.08 VGS=4.5 0.06 0.04 VGS=10.0 0.02 0 0 5 Drain - Source Voltage VDS (V) Normalized On Resistance RDS(ON) -55 C 10 5 0 1.0 2.0 3.0 4.0 5.0 1.4 VGS = 10V ID= 6A 1.2 1.0 0.8 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) Fig5. Vth - Tj Fig6. IS - VSDF 1.6 VDS = VGS ID = 250µA 1.4 1.2 1.0 0.8 0.6 0.4 -75 1.6 Gate - Source Voltage VGS (V) 40 10 1 -50 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C ) 2008. 3. 21 6.0 Reverse Drain Current IDR (A) Drain Current ID (A) Normalized Threshold Voltage Vth 25 C 15 0 20 Fig4. RDS(ON) - Tj 25 125 C 15 Drain Current ID (A) Fig3. ID - VGS 20 10 Revision No : 1 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSDF (V) 3/5 KMB6D0DN30QA Fig7. C - VDS Fig8. Qg - VGS 10 Gate - Source Voltage VGS (V) 1200 Capacitance (pF) 1000 800 600 Ciss 400 200 Coss Crss 0 0 5 10 15 20 25 VDS = 15V ID = 2A 8 6 4 2 0 0 30 3 Drain - Source Voltage VDS (V) 6 9 12 15 Gate - Charge Qg (nC) Fig9. Safe Operation Area 102 Operation in this Drain Current ID (A) area is limited by RDS(ON) 100µs 1ms 101 10ms 100ms 1s DC 10s 100 10-1 VGS= 10V SINGLE PULSE RθJA = 62.5 C/W 10-2 -1 10 100 101 102 Drain - Source Voltage VDS (V) Normalized Effective Transient Thermal Resistance Fig10. Transient Thermal Response Curve 1 0.5 0.2 10-1 0.1 0.05 0.02 0.01 PDM 10-2 t1 t2 Single Pluse RθJA= 62.5 C/W 10-3 10-4 10-3 10-2 10-1 1 101 102 103 Square Wave Pulse Duration (sec) 2008. 3. 21 Revision No : 1 4/5 KMB6D0DN30QA Fig11. Gate Charge VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig12. Resistive Load Switching RL VDS 90% 0.5 VDSS 6Ω 10 V VDS VGS VGS 10% td(on) tr ton 2008. 3. 21 Revision No : 1 td(off) tf toff 5/5