KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 TO-220 1 1.Base Absolute Maximum Ratings * Symbol 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC Collector Dissipation ( TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55~150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Condition MIN MAX MAX Units ICBO Collector Cut-off Current VCB = 80V, IE = 0 30 μA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 100 μA BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V hFE DC Current Gain VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A 40 15 240 50 VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.45 1.5 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 3A 1 1.5 V fT Current Gain - Bandwidth Product VCE = 5V, IC = 0.5A Ccb Collector Output Capacitance VCB = 10V, IE = 0, f = 1MHz 3 8 MHz 90 pF hFE Classification Classification R O Y hFE 40∼80 70∼140 120∼240 ©2006 Fairchild Semiconductor Corporation KSD526 Rev. A1 1 www.fairchildsemi.com KSD526 NPN Epitaxial Silicon Transistor April 2006 1000 IB = 240mA IB = 120mA IB = 100mA IB = 200mA IB = 160mA VCE = 5V IB = 80mA 3.2 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 4.0 IB = 60mA 2.4 IB = 40mA 1.6 IB = 20mA 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 100 10 1E-3 5.0 0.01 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC[A], COLLECTOR CURRENT VCE = 5V 3 2 1 0.4 0.6 0.8 10 Figure 2. DC current Gain 4 0.2 1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 0 0.0 0.1 1.0 1.2 1.4 1.6 10 IC = 10 IB 1 VCE(sat) 0.1 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage 40 100 PC[W], POWER DISSIPATION ICMAX. (pulse) 10 1 s m 10 s 0m 10 s m IC MAX. (continuous) 1 0.1 VCEO MAX 1S É) C D 25¡ = (T C IC[A], COLLECTOR CURRENT 35 25 20 15 10 5 0 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area KSD526 Rev. A1 30 Figure 6. Power Derating 2 www.fairchildsemi.com KSD526 Power Amplifier Applications Typical Characteristics KSD526 Power Amplifier Applications Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters KSD526 Rev. A1 3 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 4 KSD526 Rev. A1 www.fairchildsemi.com KSD526 Power Amplifier Applications TRADEMARKS