DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3108 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC PART NUMBER PACKAGE 2SK3108 Isolated TO-220 converter. FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A) •Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V) •Avalanche capability rated •Built-in gate protection diode •Isolated TO-220 package ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±8.0 A ID(pulse) ±24 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current(pulse) Note1 Single Avalanche Current Note2 IAS 8.0 A Single Avalanche Energy Note2 EAS 51 mJ Note1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω , VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13331EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan The mark ★ shows major revised points. © 1998,2000 2SK3108 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Drain Leakage Current IDSS VDS = 200 V, VGS = 0 V 100 µA Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±10 µA Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 1.5 S Ω Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 4.0 A 0.32 Input Capacitance Ciss VDS = 10 V 400 pF Output Capacitance Coss VGS = 0 V 110 pF Reverse Transfer Capacitance Crss f = 1 MHz 55 pF Turn-on Delay Time td(on) VDD = 100 V, ID = 4.0 A 12 ns Rise Time tr VGS(on) = 10 V 25 ns Turn-off Delay Time td(off) RG = 10 Ω 40 ns Fall Time tf 20 ns ★ Total Gate Charge 0.4 QG VDD = 160 V 18 nC Gate to Source Charge QGS VGS = 10 V 3.5 nC Gate to Drain Charge QGD ID = 8.0 A 10 nC Diode Forward Voltage VF(S-D) IF = 8.0 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 8.0 A, VGS = 0 V 250 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 1.0 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS(on) 10 % 90 % VDD ID 90 % 90 % IAS ID VGS 0 BVDSS ID VDS ID τ VDD Starting Tch τ = 1 µs Duty Cycle ≤ 1 % TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10 % 10 % Wave Form RL VDD Data Sheet D13331EJ1V0DS00 td(on) tr ton td(off) tf toff 2SK3108 ★ TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD TRANSFER CHARACTERISTICS DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 30 ID - Drain Current - A ID - Drain Current - A VGS = 30 V 25 20 VGS = 10 V 15 10 Pulsed 10 1 0.1 0.01 Tch =125˚C 75˚C 25˚C -25˚C 0.001 VDS = 10 V 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 5 0 Pulsed 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VGS - Gate to Source Voltage - V 5.0 VDS = 10 V ID = 1 mA 4.5 4.0 3.5 3.0 2.5 |yfs| - Forward Transfer Admittance - s GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 0 25 50 75 100 125 150 − 50 − 25 Tch - Channel Temperature - ˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.0 Pulsed 0.8 ID = 8.0 A 4.0 A 1.6 A 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 18 20 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 1 VDS =10 V Pulsed Tch = -25˚C Tch = 25˚C Tch = 75˚C Tch = 125˚C 0.1 0.01 0.01 0.1 100 10 1 ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω RDS(on) - Drain to Source On-state Resistance - Ω VGS(off) - Gate to Source Cut-off Voltage - V VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.0 Pulsed 0.8 VGS = 10 V 0.6 0.4 VGS = 30 V 0.2 0 0.1 1 10 100 ID - Drain Current - A VGS - Gate to Source Voltage - V Data Sheet D13331EJ1V0DS00 3 2SK3108 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1.2 ID = 8.0 A 0.8 0.6 ID = 4.0 A 0.4 0.2 VGS = 10 V Pulsed 0 − 50 − 25 ISD - Diode Forward Current - A 100 1.0 Pulsed 10 VGS = 10 V 1 VGS = 0 V 0.1 0.0 0 25 50 75 100 125 150 Tch - Channel Temperature - ˚C 100 Coss Crss 1 10 100 VDS - Drain to Source Voltage - V 100 10 di/dt = 50A / µs VGS = 0 V 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1.4 1.6 100 tf td(off) td(on) 10 1 VDD = 100 V VGS = 10 V RG = 10 Ω 10 100 1 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 200 ID = 8.0 A 14 150 12 VDD = 160 V 100 V 40 V 10 100 8 6 VDD = 160 V 100 V 40 V 50 0 0 5 10 4 2 15 QG - Gate Charge - nC ID - Drain Current - A 4 1.2 ID - Drain Current - A 1000 10 1.0 tr 1000 REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.8 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss 1 0.1 0.6 SWITCHING CHARACTERISTICS 1000 10 0.1 0.4 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 0.2 Data Sheet D13331EJ1V0DS00 0 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 2SK3108 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 40 100 80 60 40 20 0 0 20 40 60 80 30 20 10 0 100 120 140 160 TC - Case Temperature - ˚C 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ited 10 n) S(o ID(pulse) Lim 10 0 RD PW µs = 10 µs 1 ID(DC) m s 10 3 m r D 10 m s iss 0 m s ip s at io n Li m ite d Po we 1 TC = 25 ˚C 0.1 Single Pulse 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 100 Rth(ch-A) = 62.5˚C/W 10 Rth(ch-C) = 5˚C/W 1 0.1 0.01 Single Pulse 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s Data Sheet D13331EJ1V0DS00 5 2SK3108 IAS - Single Avalanche Energy - A 100 10 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 100 V VGS = 20 V 0 V RG = 25 Ω Starting Tch = 25˚C IAS = 8.0 A EA S =5 1m J 1 0.01 0.1 1 10 Energy Defrating Factor - % SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD VDD = 100 V VGS = 20 V 0 V RG = 25 Ω IAS 8.0 A 100 80 60 40 20 0 25 L - Inductive Load - mH 6 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D13331EJ1V0DS00 2SK3108 PACKAGE DRAWING(Unit : mm) Isolated TO-220 (MP-45F) 10.0±0.3 φ 3.2±0.2 4.5±0.2 2.7±0.2 0.7±0.1 2.54 TYP. 12.0±0.2 Drain 1.3±0.2 1.5±0.2 2.54 TYP. Body Diode Gate 13.5 MIN. 4±0.2 3±0.1 15.0±0.3 EQUIVALENT CIRCUIT Gate Protection Diode Source 2.5±0.1 0.65±0.1 1.Gate 2.Drain 3.Source 1 2 3 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D13331EJ1V0DS00 7 2SK3108 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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