TOSHIBA 2SK3797_09

2SK3797
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3797
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
High forward transfer admittance: |Yfs| = 7.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 600 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
13
Pulse (t = 1 ms)
(Note 1)
IDP
52
Drain power dissipation (Tc = 25°C)
PD
50
W
JEDEC
Single pulse avalanche energy
(Note 2)
EAS
1033
mJ
JEITA
Avalanche current
IAR
13
A
Repetitive avalanche energy (Note 3)
EAR
5.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
DC
Drain current
1: Gate
2: Drain
3: Source
A
―
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.5
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
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2SK3797
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯
⎯
±10
μA
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
⎯
⎯
V
IDSS
VDS = 600 V, VGS = 0 V
⎯
⎯
100
μA
Gate leakage current
Gate-source breakdown voltage
Test Condition
Drain cutoff current
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
⎯
⎯
V
Vth
VDS = 10 V, ID = 1 mA
2.0
⎯
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 6.5 A
⎯
0.32
0.43
Ω
Forward transfer admittance
⎪Yfs⎪
VDS = 10 V, ID = 7.0 A
2.1
7.5
⎯
S
Input capacitance
Ciss
⎯
3100
⎯
Reverse transfer capacitance
Crss
⎯
20
⎯
Output capacitance
Coss
⎯
270
⎯
VOUT
⎯
60
⎯
RL =
30Ω
⎯
110
⎯
Drain-source breakdown voltage
Gate threshold voltage
Rise time
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
ton
50 Ω
Switching time
Fall time
ID = 6.5 A
10 V
VGS
0V
tf
Turn-off time
VDD ∼
− 200 V
Duty ≤ 1%, tw = 10 μs
toff
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDD ∼
− 400 V, VGS = 10 V, ID = 13 A
pF
ns
⎯
50
⎯
⎯
215
⎯
⎯
62
⎯
⎯
40
⎯
⎯
22
⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
⎯
⎯
⎯
13
A
Pulse drain reverse current
IDRP
⎯
⎯
⎯
52
A
(Note 1)
Forward voltage (diode)
VDSF
IDR = 13 A, VGS = 0 V
⎯
⎯
−1.7
V
Reverse recovery time
trr
IDR = 13 A, VGS = 0 V,
⎯
1050
⎯
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/μs
⎯
15
⎯
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3797
Part No. (or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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2SK3797
ID – VDS
ID – VDS
14
6.6V
10
(A)
7V
8V
6.2V
DRAIN CURRENT ID
DRAIN CURRENT ID
(A)
10V
12
30
COMMON SOURCE
Tc = 25°C
PULSE TEST
8
5.8V
6
5.4V
4
5V
2
25
7V
20
6.6V
15
6.2V
10
5.8V
5.4V
5
5V
VGS = 4V
0
0
2
6
4
8
DRAIN−SOURCE VOLTAGE
VDS
COMMON SOURCE
Tc = 25°C
PULSE TEST
8V
10V
0
0
10
(V)
VGS = 4 V
5
10
15
DRAIN−SOURCE VOLTAGE
ID – VGS
(V)
COMMON SOURCE
VDS = 20 V
DRAIN−SOURCE VOLTAGE
VDS (V)
(A)
DRAIN CURRENT ID
VDS
VDS – VGS
COMMON SOURCE
20
30
10
30
25
25
20
PULSE TEST
15
Tc = 100°C
Tc = 25°C
10
5
Tc = 25℃
8
PULSE TEST
6
ID = 13 A
4
ID = 6.5 A
2
ID = 3 A
Tc = −55°C
0
0
2
4
6
8
GATE−SOURCE VOLTAGE
VGS
0
0
10
(V)
4
8
COMMON SOURCE
VDS = 20 V
PULSE TEST
Tc = −55°C
0.1
0.1
VGS
20
(V)
RDS (ON) – ID
1
DRAIN−SOURCE ON RESISTANCE
RDS (ON) (Ω)
FORWARD TRANSIENT ADMITTANCE
⎪Yfs⎪ (S)
⎪Yfs⎪ – ID
100
16
GATE−SOURCE VOLTAGE
100
10
12
25
10
DRAIN CURRENT ID
100
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 V
0.3
VGS = 15 V
0.1
0.1
1
10
DRAIN CURRENT ID
3
100
(A)
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2SK3797
RDS (ON) – Tc
IDR – VDS
100
0.8
COMMON SOURCE
COMMON SOURCE
VGS = 10 V
Tc = 25°C
DRAIN REVERSE CURRENT
IDR (A)
DRAIN−SOURCE ON RESISTANCE
RDS (ON) ( Ω)
1
PULSE TEST
0.6
ID = 13A
6.5
0.4
3
0.2
0
−80
−40
0
40
80
CASE TEMPERATURE
120
Tc
PULSE TEST
10
1
5
3
0.1
0
160
10
(°C)
−0.2
VGS = 0, −1 V
1
−0.4
−0.6
−0.8
DRAIN−SOURCE VOLTAGE
Capacitance – VDS
−1
VDS
−1.2
(V)
Vth – Tc
5
10000
1000
Coss
100
COMMON SOURCE
VGS = 0 V
Crss
f = 1 MHz
10 Tc = 25°C
10
DRAIN−SOURCE VOLTAGE
COMMON SOURCE
1
(V)
ID = 1 mA
−40
0
40
80
CASE TEMPERATURE
120
Tc
160
(°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
PD – Tc
80
20
500
DRAIN−SOURCE VOLTAGE
VDS (V)
DRAIN POWER DISSIPATION
PD (W)
VDS = 10 V
PULSE TEST
0
−80
100
VDS
2
60
40
20
400
16
VDS
VDD = 100 V
300
12
200V
8
400V
200
COMMON SOURCE
VGS
ID = 13 A
100
4
Tc = 25°C
PULSE TEST
0
0
40
80
CASE TEMPERATURE
120
Tc
0
0
160
(°C)
20
40
TOTAL GATE CHARGE
4
80
60
Qg
(V)
1
3
VGS
0.1
4
GATE−SOURCE VOLTAGE
CAPACITANCE
C
(pF)
GATE THRESHOLD VOLTAGE
Vth (V)
Ciss
0
100
(nC)
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2SK3797
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
0.01
SINGLE PULSE
T
Duty = t/T
Rth (ch-c) = 2.5°C/W
0.001
10μ
1m
100μ
100m
10m
PULSE WIDTH
tw (s)
SAFE OPERATING AREA
100
EAS – Tch
1200
(mJ)
ID max (PULSED) *
100 μs *
AVALANCHE ENERGY EAS
(A)
ID max (CONTINOUS)
DRAIN CURRENT ID
10
1
10
1 ms *
1
DC OPERATION
Tc = 25°C
*SINGLE NONREPETITIVE
0.1
CURVES MUST BE
10
600
400
200
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
DERATED LINEARLY WITH
0.01
1
800
0
25
PULSE Tc = 25°C
INCREASE IN TEMPERATURE
1000
VDSS max
100
DRAIN−SOURCE VOLTAGE
15 V
1000
VDS
(V)
BVDSS
IAR
−15 V
VDD
TEST CIRCUIT
RG = 25 Ω
VDD = 90 V, L = 10.7mH
5
VDS
WAVEFORM
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
VDSS
DD
⎝
⎠
2009-09-29
2SK3797
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
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