DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1701A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion 8 battery application. 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • 2.5 V gate drive and low on-resistance RDS(on)1 = 27 mΩ (MAX.) (VGS = 4.0 V, ID = 3.5 A) • Small and surface mount package (Power SOP8) 4.4 0.8 +0.10 –0.05 0.05 MIN. • Built-in G-S protection diode 6.0 ±0.3 4 5.37 MAX. 0.15 1.8 MAX. • Low Ciss : Ciss = 1040 pF (TYP.) 1.44 1 RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A) 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1701AG Power SOP8 EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±7.0 A ID(pulse) ±28 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note1 Total Power Dissipation (TA = 25°C) Note2 Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. G12711EJ1V0DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan © 1998 µ PA1701A ELECTRICAL CHARACTERISTICS (TA = 25 °C ) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 4.0 V, ID = 3.5 A 19 27 mΩ RDS(on)2 VGS = 2.5 V, ID = 3.5 A 25 40 mΩ VGS(off) VDS = 10 V, ID = 1 mA 0.5 0.9 1.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 6.0 13 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 1040 pF Output Capacitance Coss VGS = 0 V 340 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) ID = 3.5 A 25 ns VGS(on) = 4.0 V 120 ns td(off) VDD = 15 V 73 ns tf RG = 10 Ω 77 ns Total Gate Charge QG ID = 7.0 A 13.2 nC Gate to Source Charge QGS VDD = 24 V 1.8 nC Gate to Drain Charge QGD VGS = 4.0 V 5.8 nC VF(S-D) IF = 7.0 A, VGS = 0 V 0.77 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 31 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 58 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff µ PA1701A TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200mm 2 ×1.7mm 2.4 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 o ID - Drain Current - A S( 10 ID(pulse) = 28 A Pw R D VG ( 20 = 1 ID - Drain Current - A d ite Lim 0 V) 1 = S n) m s 10 ID(DC) = 7 A m s 10 0 m s Po we rD iss 1 ipa tio n Lim ite d Pulsed VGS = 10 V 4V 2.5 V 10 TC = 25 ˚C Single Pulse 0.1 0.1 1 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 1 TA = 125˚C 75˚C 25˚C -25˚C 0.1 0 1 2 VDS = 10 V 3 4 VGS - Gate to Source Voltage - V 3 µ PA1701A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5˚C/W 100 10 1 0.1 0.01 0.001 Mounted on ceramic substrate of 1200mm2 × 1.7mm Single Pulse 10 µ 100 µ 1m 10 m 100 m 1 10 100 1 000 |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS =10 V Pulsed 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 1 10 100 RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 70 60 ID = 3.5 A 50 40 30 20 10 5 0 15 10 VGS - Gate to Source Voltage - V 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 VGS = 2.5 V 30 4V 20 10 V 10 0 1 10 ID - Drain Current - A 100 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.8 VDS =10 V ID =1 mA 1.5 1.0 0.5 0 − 20 0 20 40 60 80 100 120 140 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 VGS = 2.5 V 30 4V Pulsed IF - Diode Forward Current - A 10 V 20 10 0 100 0V 10 1 0.1 ID = 3.5 A − 20 0 0 20 40 60 80 100 120 VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 1000 Ciss Coss 100 10 0.1 Crss 1 10 30 1 000 td(on), tr, td(off), tf - Switching Time - ns 10000 100 tr tf td(off) 100 td(on) 10 VDS = 15 V VGS = 4 V RG = 10 Ω 1 0.1 1 trr - Reverse Recovery Diode - ns di/dt = 100A/µs VGS = 0 V 100 10 1 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 000 1.0 0.5 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF VGS =10 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 7 A 30 VDD = 24 V 15 V 6V 6 VGS 5 4 20 3 10 2 VDS 0 2 4 6 1 8 10 12 14 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1701A 0 16 QG - Gate Charge - nC 5 µ PA1701A [MEMO] 6 µ PA1701A [MEMO] 7 µ PA1701A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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