DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch. 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain FEATURES • Low on-resistance RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A) • Built-in G-S protection diode 0.05 MIN. • Small and surface mount package (Power SOP8) 4.4 5.37 MAX. 0.8 +0.10 –0.05 • Low Ciss : Ciss = 730 pF (TYP.) 6.0 ±0.3 4 0.15 1.8 MAX. RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A) 1.44 1 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1708G Power SOP8 EQUIVARENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage Gate to Source Voltage Note1 Note2 Drain Current (DC) VDSS 40 V VGSS ±25 V ID(DC) ±7.0 A ID(pulse) ±28 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Drain Current (pulse) Note3 Total Power Dissipation (TA = 25°C) Note4 Drain Body Diode Gate Gate Protection Diode Source Notes 1. VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 4. Mounted on ceramic substrate of 1200 mm x 1.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Document No. G13603EJ1V0DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan © 1998 µ PA1708 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 3.5 A 18.0 24.0 mΩ RDS(on)2 VGS = 4.5 V, ID = 3.5 A 28.0 40.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 3.5 A 4.0 8.4 Drain Leakage Current IDSS VDS = 40 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 730 pF Output Capacitance Coss VGS = 0 V 340 pF Reverse Transfer Capacitance Crss f = 1 MHz 150 pF Turn-on Delay Time td(on) ID = 3.5 A 16 ns VGS(on) = 10 V 96 ns td(off) VDD = 20 V 49 ns tf RG = 10 Ω 30 ns Total Gate Charge QG ID = 7.0 A 20 nC Gate to Source Charge QGS VDD = 32 V 2.5 nC Gate to Drain Charge QGD VGS = 10 V 6.8 nC VF(S-D) IF = 7.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 7.0 A, VGS = 0 V 32 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 25 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID 90 % 90 % 10 % 0 10 % Wave Form τ = 1µ s Duty Cycle ≤ 1 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff µ PA1708 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 TA - Ambient Temperature - ˚C 60 80 100 120 140 160 Mounted on ceramic substrate of 1200mm2 × 1.7mm Pulsed ID(pulse) = 28 A Pw 10 ID(DC) = 7 A 0 Po = 1 m s m s 10 m s we rD iss 1 ipa tio n Lim ite VGS = 10 V 30 4.5 V 20 10 d TA = 25 ˚C Single Pulse 0.1 0.1 40 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A ID - Drain Current - A 10 d ite Lim 0 V) n) o 1 = S( RD VGS ( 20 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of 1200mm 2 ×1.7mm 2.4 1 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 1 TA = 75˚C 125˚C 150˚C TA = 25˚C -25˚C -50˚C 0.1 VDS = 10 V 0 1 2 3 4 5 6 7 8 VGS - Gate to Source Voltage - V 3 µ PA1708 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(ch-a) = 62.5˚C/W 100 10 1 0.1 0.01 0.001 100 µ Mounted on ceramic substrate of 1200mm2 × 1.7mm Single Pulse 1m 10 m 100 m 1 10 100 1 000 10 000 |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 VDS =10 V Pulsed TA = −50˚C −25˚C 25˚C 75˚C 125˚C 150˚C 1 0.1 10 1 100 RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 70 60 50 40 30 ID = 3.5 A 20 10 5 0 15 10 VGS - Gate to Source Voltage - V 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed 70 60 50 40 VGS = 4.5 V 30 20 10 V 10 0 1 10 ID - Drain Current - A 100 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID- Drain Current - A GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 4 3 2 1 0 -50 0 50 100 150 Tch - Channel Temperature - ˚C SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 40 IF - Diode Forward Current - A VGS = 4.5 V 30 10 V 20 10 100 VGS =10 V 10 0V 1 0.1 ID = 3.5 A 0 -40 -20 0 0 20 40 60 80 100 120 140 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 Ciss Coss 0.1 Crss 1 100 tf 100 td(off) td(on) 10 VDS = 20 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100A/µs VGS = 0 V 100 10 1 0.1 tr VDS - Drain to Source Voltage - V 1 000 trr - Reverse Recovery Diode - ns 10 td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz 100 1.5 1 000 1 10 ID - Drain Current - A 100 VDS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 10000 1.0 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C ID = 7 A VDD = 32 V 20 V 8V VGS 10 40 8 30 6 20 4 10 0 2 VDS 5 10 15 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1708 0 20 QG - Gate Charge - nC 5 µ PA1708 [MEMO] 6 µ PA1708 [MEMO] 7 µ PA1708 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5