DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA1980 P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING PACKAGE DRAWING (Unit: mm) DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. 0 to 0.1 FEATURES • 1.8 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 135 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A) RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A) • Low reverse current (Schottky barrier diode) IR = 20 µA MAX. (VR = 40 V) 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1: Anode 2: Source 3: Gate 4: Drain 5: N/C 6: Cathode PIN CONNECTION (Top View) ORDERING INFORMATION PART NUMBER PACKAGE µ PA1980TE SC-95 (Mini Mold Thin Type) 6 5 4 1 2 3 Marking: TW Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ± 100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16550EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 µ PA1980 MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS −20.0 V Gate to Source Voltage (VDS = 0 V) VGSS m8.0 V Drain Current (DC) ID(DC) m2.0 A ID(pulse) m8.0 A PT 0.57 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +125 °C Drain Current (pulse) Note1 Total Power Dissipation Note2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 2 SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Repetitive Peak Reverse Voltage VRRM 40 V IF(AV) 0.5 A IFSM 5.5 A Junction Temperature Tj +125 °C Storage Temperature Tstg −55 to +125 °C Average Forward Current Surge Current Note3 Note4 2 Notes 3. Mounted on FR-4 board of 5000 mm x 1.1 mm 4. 50 Hz sine wave, 1 cycle 2 Data Sheet G16550EJ1V0DS µ PA1980 MOS FET ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20.0 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 µA −1.50 V Gate Cut-off Voltage Note Forward Transfer Admittance VDS = −10.0 V, ID = −1.0 mA VGS(off) Note Drain to Source On-state Resistance Note −0.45 −0.75 1.0 4.1 | yfs | VDS = −10.0 V, ID = −1.0 A RDS(on)1 VGS = −4.5 V, ID = −1.0 A 116 135 mΩ RDS(on)2 VGS = −2.5 V, ID = −1.0 A 142 183 mΩ RDS(on)3 VGS = −1.8 V, ID = −0.5 A 170 284 mΩ S Input Capacitance Ciss VDS = −10.0 V 272 pF Output Capacitance Coss VGS = 0 V 60 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 30 pF Turn-on Delay Time td(on) VDD = −10.0 V, ID = −1.0 A 9 ns VGS = −4.0 V 5 ns RG = 10 Ω 33 ns 9 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = −16.0 V 2.3 nC Gate to Source Charge QGS VGS = −4.0 V 0.6 nC Gate to Drain Charge QGD ID = −2.0 A 0.6 nC IF = 2.0 A, VGS = 0 V 0.90 V Body Diode Forward Voltage VF(S-D) Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Forward Voltage VF IF = 0.5 A Reverse Current IR VR = 40.0 V TEST CIRCUIT 1 SWITCHING TIME MIN. UNIT 0.44 0.51 V 3 20 µA D.U.T. VGS(−) RL VGS RG MAX. TEST CIRCUIT 2 GATE CHARGE D.U.T. PG. TYP. Wave Form VDD 0 VGS 10% IG = −2 mA RL 50 Ω VDD 90% PG. VDS(−) 90% VGS(−) 0 90% VDS VDS τ τ = 1 µs Duty Cycle ≤ 1% 10% 0 10% Wave Form td(on) tr ton td(off) tf toff Data Sheet G16550EJ1V0DS 3 µ PA1980 MOS FET TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 Mounted on FR-4 board of 2 5000 mm x 1.1 mm, t ≤ 5 sec. 0.5 0.4 0.3 0.2 0.1 0 0 0 25 50 75 100 125 150 175 0 TA - Ambient Temperature - °C 25 50 75 100 FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A R D S (o n) Lim ite d (V G S = –4.5 V ) I D (pu lse) I D (D C ) PW = 1 m s -1 10 m s - 0 .1 100 m s S ingle p ulse M o unted on F R -4 bo ard o f 2 500 0 m m x 1.1 m m - 0 .01 - 0 .1 -1 5 s - 10 - 1 00 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm PD (FET) : P (SBD) = 1:0 1 1m 10 m 100 m 1 PW - Pulse Width - s 4 150 TA - Ambient Temperature - °C - 1 00 - 10 125 Data Sheet G16550EJ1V0DS 10 100 1000 175 µ PA1980 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS -8 - 10 V D S = – 1 0 .0 V P u ls e d Pulsed - 1 -4 ID - Drain Current - A ID - Drain Current - A V GS = –4.5 V -6 –2.5 V -2 –1.8 V - 0 .0 0 1 - 0 .0 0 0 0 1 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 0 .5 - 1 - 1 .5 - 2 - 2 .5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -1 V DS = –10.0 V I D = –1.0 m A - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 -50 0 - 1.2 0 50 100 | yfs | - Forward Transfer Admittance - S 0 150 10 V D S = –10.0 V Pulsed 1 T A = –25°C 25°C 75°C 125°C 0.1 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 V G S = –4.5 V Pulsed 250 200 T A = 125°C 75°C 25°C –25°C 150 100 50 - 0.01 - 0.1 -1 - 10 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V - 0 .0 1 - 0 .0 0 0 1 0 RDS(on) - Drain to Source On-state Resistance - mΩ T A = 1 25 °C 7 5°C 2 5°C – 25 °C - 0 .1 300 250 V G S = –2.5 V Pulsed T A = 125°C 75°C 25°C –25°C 200 150 100 50 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A Data Sheet G16550EJ1V0DS 5 300 V G S = –1.8 V Pulsed T A = 125°C 250 75°C 200 25°C –25°C 150 100 50 - 0.01 - 0.1 -1 - 10 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 ID = –1.0 A Pulsed 250 200 150 100 50 0 -6 -8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 300 1000 VGS = 0 V f = 1.0 M H z Pulsed 250 V GS = –1.8 V, ID = –0.5 A V GS = –2.5 V, ID = –1.0 A 200 150 100 V GS = –4.5 V, ID = –1.0 A C iss 100 C oss C rss 50 -50 0 50 100 10 - 0.1 150 SWITCHING CHARACTERISTICS - 10 - 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 tf 10 t d(on) tr ID = –2.0 A VGS - Gate to Source Voltage - V V DD = –10.0 V V G S = –4.0 V R G = 10 Ω t d(off) 1 - 0.1 -1 VDS - Drain to Source Voltage - V 100 td(on), tr, td(off), tf - Switching Time - ns -4 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C -4 V DD = –4.0 V –10.0 V –16.0 V -3 -2 -1 0 -1 - 10 ID - Drain Current - A 6 -2 ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1980 0 0.5 1 1.5 2 QG - Gate Change - nC Data Sheet G16550EJ1V0DS 2.5 3 µ PA1980 SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 10 VGS = 0 V Pulsed 1 0.1 0.01 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE 10000 T A = 125°C 75°C 25°C –25°C 1 IR - Reverse Current - µA IF - Forward Current - A 10 0.1 Pulsed 1000 T A = 125°C 100 75°C 10 25°C 1 0.1 –25°C 0.01 Pulsed 0.01 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VF - Forward Voltage - V 0 10 20 30 40 50 VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE CT - Terminal Capacitance - pF 140 f = 1.0 MHz 120 100 80 60 40 20 0 0 10 20 30 40 50 VR - Reverse Voltage - V Data Sheet G16550EJ1V0DS 7 µ PA1980 • The information in this document is current as of February, 2003. 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