DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V (Min) 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature LOGOXYY 150 Degrees C 150 Degrees C 0.175 - 0.185 (4.450 - 4.700) 2N 6076 SEATING POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C PLANE 625 mW 0.500 (12.70) VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base IC Collector Current 25 V 25 V 5V 500 mA MIN 0.016 - 0.021 (0.410- 0.533) 0.045 - 0.055 (1.143- 1.397) 0.095 - 0.105 (2.413 - 2.667) ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated) SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS BVCBO Collector to Base Voltage 25 V IC = 100 uA BVCEO Collector to Emitter Voltage 25 V IC = 10 mA BVEBO Emitter to Base Voltage 5 V IE = 10 uA ICBO Collector Cutoff Current 100 nA VCB = 25 V 10 uA VCB = 25 V , T=+100°C ICES Collector Cutoff Current 100 nA VCE = 25 V IEBO Emitter Cutoff Current 100 uA VEB = 3.0 V hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage 0.25 V IC = 10mA IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage 0.8 V IC = 10mA IB = 1.0mA VBE(on) Base -Emitter On Voltage 1.2 V VCE = 10 V 1998 Fairchild Semiconductor Corporation 100 0.5 500 VCE = 10 V IC = 10 mA IC = 10mA 2n6076.ppt6894 revA DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated) SYM CHARACTERISTICS MIN MAX UNITS Ccb Output Capacitance 1 13 hfe Small Signal Current Gain 100 750 pF TEST CONDITIONS VCB = 10 V, f = 1 MHz VCE = 10 V, IC=10 mA, f =1KHz NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings are based on a maximum junction temperature of 150 degrees C.