, On&.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MTP3055E
N-CHANNEL 60V-0.1Q-12A TO-220
STripFET™ MOSFET
TYPE
MTP3055E
VDSS
60 V
RDS(on)
ID
< 0.15 a
12 A
TYPICAL RDS(on) = 0.1 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VDS
VDGR
VGS
ID
IDM
IDM(-)
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (Res = 20 kii)
Unit
60
V
60
V
± 20
V
Drain Current (continuous) at Tc = 25 °C
12
A
Drain Current (pulsed) at Tc = 100 °C
9
A
48
A
Gate-source Voltage
Drain Current (pulsed)
Plot
Total Dissipation at Tc = 25 °C
Tstg
Storage Temperature
Tj
Value
Max. Operating Junction Temperature
40
W
-65 to 175
°C
175
°c
{•) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders.
MTP3055E
THERMAL DATA
Rthj-case
Rlhj-amb
R|hc-s
I,
Max
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Typ
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
3.75
62.5
0.5
300
°C/W
oC/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
12
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 25 V)
50
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
loss
'GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
!D=250|uA
VGS=0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGs = 0) VDS = Max Rating x 0.8
Gate-body Leakage
Current (VDs = 0)
Min.
Typ.
Max.
Unit
V
60
T c = 125 °C
VQS = + 20 V
1
10
MA
± 100
nA
uA
ON (*)
Symbol
Parameter
Test Conditions
VcS(th)
Gate Threshold Voltage VDS = VGS
ID = 250 u.A
RoS(on)
Static Drain-source On
Resistance
VGS = 10V
ID= 7 A
lD(on)
On State Drain Current
VDS > lD(on) X RDS(on)ma!<
VGS = 10 V
Min.
Typ.
Max.
Unit
2
2.9
4
V
0.1
0.15
il
12
A
DYNAMIC
Symbol
9fs (*)
Ciss
Coss
Crss
Parameter
Test Conditions
Forward
Transconductance
VDS
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
>
lD(on) X RDS(on)max
f = 1 MHz
ID = 6 A
VGS = 0
Max.
Min.
Typ.
4
6
S
760
100
30
PF
PF
pF
Unit
MTP3055E
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VOD = 30 V I D = 7 A
R G = 50 £J
V G S = 10 V
(see test circuit)
20
65
70
35
ns
ns
ns
ns
Q9
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I D = 12 A VGS = 10 V
VDD = 40 V
(see test circuit)
15
7
5
nC
nC
nC
Qgs
Qgd
SOURCE DRAIN DIODE
Symbol
Parameter
ISDM(')
Source-drain Current
Source-drain Current
(pulsed)
V SD (»)
Forward On Voltage
ISD
Test Conditions
Typ.
Max.
12
48
ISD = 12 A
Reverse Recovery
ISD = 12 A
V DD = 30 V
Time
Reverse Recovery
Qrr
Charge
) Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
trr
Min.
V GS =0
di/dt = 100 A/us
Tj = 150 °C
2.0
L Unit
A
A
V
65
ns
0.17
uC