/ , One. O1^ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. STP6NA80 STP6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP6NA80 STP6NA80FI VDSS 800V 800V RDS(on) ID < 1.9ii < 1.9 n 5.7 A 3.4 A TYPICAL Ros(on) ^ 1.68 ti ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low Ros(on) and gate charge, unequalled ruggedness and superior switching performance. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE POWER SUPPLIES (SMPS) . DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 6(1) 5(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value STP6NA80 VDS VDGR VGS Unit STP6NA80FI Drain-source Voltage (Vcs = 0) 800 V Drain-gate Voltage (R G s = 20 ki2) 800 V ± 30 Gate-source Voltage V ID Drain Current (continuous) at T c = 25 °C 5.7 3.4 A ID Drain Current (continuous) at T c = 100 °C 3.6 2.1 A Drain Current (pulsed) 23 23 A Total Dissipation at Tc = 25 °C 125 45 W 1 0.36 W/°C — 2000 V !DM(») Plot Derating Factor Viso Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature -65 to 150 °C 150 °C (•) Pulse width limited by safe operating area NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors STP6NA80/FI THERMAL DATA TO-220 Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose Rthc-sink T| Max ISOWATT220 1 2.78 °C/W °c/w °c/w °c 62.5 0.5 300 AVALANCHE CHARACTERISTICS Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, 5 < 1%) 5.7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 165 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, 5 < 1%) 6.5 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 °C, pulse width limited by Tj max, 5 < 1%) 3.6 A Symbol Parameter ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS loss IGSS Parameter Drain-source Breakdown Voltage VGS=0 Zero Gate Voltage VDS = Max Rating Drain Current (VGs = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (Vos = 0) Min. Test Conditions !D=250|xA Typ. Max. Unit V 800 TC=125°C V GS = ± 30 V 25 250 HA HA ± 100 nA ON (* Symbol Parameter Test Conditions Vos(th) Gate Threshold Voltage VDS = VGS ! D = 2 5 0 n A RDS(on) Static Drain-source On Resistance VGS = 10V | D = 3 A iD(on) On State Drain Current VDS > Min. Typ. Max. Unit 2.25 3 3.75 V 1.68 1.9 iJ A 6 lo(on) X RDS(on)max V G s = 10 V DYNAMIC Symbol 9fs (*) Ciss Coss Crss Parameter Test Conditions Forward Transconductance VDS > lD(on) * RDS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS^ 25 V f = 1 MHz ID = 3 A VGS= 0 Min. Typ. 4 6.1 1330 160 40 Max. Unit S 1750 210 55 pF pF PF STP6NA80/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Typ. Max. Unit Turn-on Time Rise Time V DD = 4 0 0 V I D = 3 A R G = 47 n VGS = 10 V (see test circuit, figure 3) 35 95 45 125 ns ns Turn-on Current Slope VDD = 6 4 0 V l o = 6 A RG=47n VGS = 10V (see test circuit, figure 5) 170 Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V 58 8 27 78 nC nC nC Typ. Max. Unit 90 25 125 120 35 165 ns ns ns Typ. Max. Unit 5.7 23 A A 1.6 V Symbol td(on) tr (di/dt) on Qg Qgs Qg<J Parameter Test Conditions ID = 6 A Min. VGS = 10V A/us SWITCHING OFF Symbol tr(Voff) tf tc Parameter Test Conditions Off-voltage Rise Time Fall Time Cross-over Time Min. VDD = 6 4 0 V ID = 6 A R G = 47 Q VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD |SDM(») Source-drain Current Source-drain Current (pulsed) VSD(*) Forward On Voltage lso = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current !SD = 6 A di/dt = 100 A/U.S VDD = 100 V Tj = 150 °C (see test circuit, figure 5) trr Qrr IRRM Min. VGs=0 850 ns 15 M.C 35 A *) Pulsed: Pulse duration = 300 us, duty cycle 1.5 % •) Pulse width limited by safe operating area Safe Operating Areas for TO-220 10 Safe Operating Areas for ISOWATT220 10 . -_ V D S (V) 10-'