STP6NA80 STP6NA80FI - New Jersey Semiconductor

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TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
STP6NA80
STP6NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
STP6NA80
STP6NA80FI
VDSS
800V
800V
RDS(on)
ID
< 1.9ii
< 1.9 n
5.7 A
3.4 A
TYPICAL Ros(on) ^ 1.68 ti
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low Ros(on) and gate charge, unequalled
ruggedness and superior switching performance.
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
. HIGH CURRENT, HIGH SPEED SWITCHING
. SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
6(1)
5(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
STP6NA80
VDS
VDGR
VGS
Unit
STP6NA80FI
Drain-source Voltage (Vcs = 0)
800
V
Drain-gate Voltage (R G s = 20 ki2)
800
V
± 30
Gate-source Voltage
V
ID
Drain Current (continuous) at T c = 25 °C
5.7
3.4
A
ID
Drain Current (continuous) at T c = 100 °C
3.6
2.1
A
Drain Current (pulsed)
23
23
A
Total Dissipation at Tc = 25 °C
125
45
W
1
0.36
W/°C
—
2000
V
!DM(»)
Plot
Derating Factor
Viso
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
-65 to 150
°C
150
°C
(•) Pulse width limited by safe operating area
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
STP6NA80/FI
THERMAL DATA
TO-220
Rthj-case
Thermal Resistance Junction-case
Rthj-amb
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
Rthc-sink
T|
Max
ISOWATT220
1
2.78
°C/W
°c/w
°c/w
°c
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, 5 < 1%)
5.7
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
165
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max, 5 < 1%)
6.5
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 °C, pulse width limited by Tj max, 5 < 1%)
3.6
A
Symbol
Parameter
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
loss
IGSS
Parameter
Drain-source
Breakdown Voltage
VGS=0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGs = 0) V DS = Max Rating x 0.8
Gate-body Leakage
Current (Vos = 0)
Min.
Test Conditions
!D=250|xA
Typ.
Max.
Unit
V
800
TC=125°C
V GS = ± 30 V
25
250
HA
HA
± 100
nA
ON (*
Symbol
Parameter
Test Conditions
Vos(th)
Gate Threshold Voltage VDS = VGS ! D = 2 5 0 n A
RDS(on)
Static Drain-source On
Resistance
VGS = 10V | D = 3 A
iD(on)
On State Drain Current
VDS
>
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
1.68
1.9
iJ
A
6
lo(on) X RDS(on)max
V G s = 10 V
DYNAMIC
Symbol
9fs (*)
Ciss
Coss
Crss
Parameter
Test Conditions
Forward
Transconductance
VDS > lD(on) * RDS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS^ 25 V
f = 1 MHz
ID = 3 A
VGS= 0
Min.
Typ.
4
6.1
1330
160
40
Max.
Unit
S
1750
210
55
pF
pF
PF
STP6NA80/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Typ.
Max.
Unit
Turn-on Time
Rise Time
V DD = 4 0 0 V I D = 3 A
R G = 47 n
VGS = 10 V
(see test circuit, figure 3)
35
95
45
125
ns
ns
Turn-on Current Slope
VDD = 6 4 0 V l o = 6 A
RG=47n
VGS = 10V
(see test circuit, figure 5)
170
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 640 V
58
8
27
78
nC
nC
nC
Typ.
Max.
Unit
90
25
125
120
35
165
ns
ns
ns
Typ.
Max.
Unit
5.7
23
A
A
1.6
V
Symbol
td(on)
tr
(di/dt) on
Qg
Qgs
Qg<J
Parameter
Test Conditions
ID = 6 A
Min.
VGS = 10V
A/us
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Test Conditions
Off-voltage Rise Time
Fall Time
Cross-over Time
Min.
VDD = 6 4 0 V ID = 6 A
R G = 47 Q VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
|SDM(»)
Source-drain Current
Source-drain Current
(pulsed)
VSD(*)
Forward On Voltage
lso = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
!SD = 6 A di/dt = 100 A/U.S
VDD = 100 V
Tj = 150 °C
(see test circuit, figure 5)
trr
Qrr
IRRM
Min.
VGs=0
850
ns
15
M.C
35
A
*) Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
•) Pulse width limited by safe operating area
Safe Operating Areas for TO-220
10
Safe Operating Areas for ISOWATT220
10
.
-_
V D S (V)
10-'