CS64N90 ® Pb CS64N90 Pb Free Plating Product 85V,92A N-Channel Trench Process Power MOSFET General Description CS64N90 CS64N90 series is N-channel MOS Field Effect Transistor (TO-220 HeatSink) designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. G D S Features ● VDS=85V; ID=92A@ VGS=10V; CS64N90F RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test (TO-220F FullPak) Schematic Diagram Application ● ● ● ● ● G 64V E-Bike Controller Applications Hard Switched and High Frequency Circuits Uninterruptible Power Supply Inverter Application Amplifier Application D S VDS = 85 V CS64N90B ID = 92A (TO-263/D2PAK) D S RDS(ON) = 6.2 mΩ G Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V) 85 V VGS Gate-Source Voltage (VDS=0V) ±25 V ID (DC) Drain Current (DC) at Tc=25℃ 92 A ID (DC) Drain Current (DC) at Tc=100℃ 64.4 A 368 A Peak Diode Recovery Voltage 30 V/ns Maximum Power Dissipation(Tc=25℃) 139 W Derating Factor 0.93 W/℃ 625 mJ -55 To 175 ℃ IDM (pluse) dv/dt PD EAS TJ,TSTG Drain Current-Continuous@ Current-Pulsed Single Pulse Avalanche Energy (Note 1) (Note 2) Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=40V,VG=10V,RG=25Ω B B Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/5 http://www.thinkisemi.com/ CS64N90 ® Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance,Junction-to-Case Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Value Unit 1.08 ℃/W Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 82 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=82V,VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=82V,VGS=0V 10 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 4 V RDS(ON) Drain-Source On-State Resistance 7.45 mΩ 2 VGS=10V, ID=40A 6.2 Dynamic Characteristics gFS Forward Transconductance Ciss Input Capacitance VDS=10V,ID=15A VDS=25V,VGS=0V, f=1.0MHz 20 S 5053 PF 442 PF Coss Output Capacitance Crss Reverse Transfer Capacitance 145 PF Qg Total Gate Charge 106 nC Qgs Gate-Source Charge 19 nC Qgd Gate-Drain Charge 47.9 nC 15 nS 18 nS 31 nS 38 nS VDS=50V,ID=40A, VGS=10V Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) tf VDD=30V,ID=40A,RL=15Ω VGS=10V,RG=2.5Ω Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Characteristics ISD Source-drain Current(Body Diode) 92 A ISDM Pulsed Source-Drain Current(Body Diode) 368 A VSD (Note 1) Forward On Voltage TJ=25℃,ISD=40A,VGS=0V (Note 1) trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-on Time (Note 1) TJ=25℃,IF=75A di/dt=100A/μs 0.78 0.95 V 56 nS 113 nC Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/5 http://www.thinkisemi.com/ CS64N90 ® Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/5 http://www.thinkisemi.com/ CS64N90 ® TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure2. Transfer Characteristics ID-Drain Current (A) ID-Drain Current (A) Figure1. Output Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. Rdson Vs Drain Current Figure4. Rdson Vs Junction Temperature Normalized On-Resistance RDS(ON) On-Resistance (mΩ) 3.0 ID- Drain Current (A) TJ-Junction Temperature(℃) Figure6. Source- Drain Diode Forward IS - Source Current (A) VGS Gate-Source Voltage (V) Figure5. Gate Charge Qg Gate Charge (nC) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. VSD Source-Drain Voltage (V) Page 4/5 http://www.thinkisemi.com/ CS64N90 ® Figure8. Safe Operation Area ID-Drain Current(A) C Capacitance (pF) Figure7. Capacitance vs Vds VDS Drain-Source Voltage (V) Figure10. VGS(th) vs Junction Temperature Normalized BVDSS Figure9. BVDSS vs Junction Temperature VDS Drain-Source Voltage (V) TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) R(t), Normalized Effective Transient Thermal Impedance Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 5/5 http://www.thinkisemi.com/