STMICROELECTRONICS STP80NS04Z

STP80NS04Z

N - CHANNEL CLAMPED 7.5mΩ - 80A - TO-220
FULLY PROTECTED MESH OVERLAY MOSFET
TYPE
STP80NS04Z
■
■
■
■
V DSS
R DS(on)
CLAMPED <0.008 Ω
ID
80 A
TYPICAL RDS(on) = 0.0075 Ω
100% AVALANCHE TESTED
LOW CAPACITANCE AND GATE CHARGE
175 oC MAXIMUM JUNCTION
TEMPERATURE
3
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in the automotive environment. Any other
application requiring extra ruggedness is also
recommended.
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
ABS, SOLENOID DRIVERS
■ MOTOR CONTROL
■ DC-DC CONVERTERS
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Un it
V DS
Drain-source Voltage (VGS = 0)
Parameter
CLAMPED
V
V DG
Drain- gate Voltage
CLAMPED
V
V GS
G ate-source Voltage
CLAMPED
V
80
A
ID
Drain Current (continuous) at Tc = 25 oC
o
ID
Drain Current (continuous) at Tc = 100 C
60
A
I DG
Drain Gate Current (continuous)
± 50
mA
I GS
G ate Source Current (continuous)
± 50
mA
I DM (•)
P tot
Drain Current (pulsed)
320
A
T otal Dissipation at Tc = 25 o C
160
W
Derating Factor
1.06
W /o C
V ESD (G-S ) G ate-Source ESD (HBM - C= 100pF , R=1.5 kΩ)
2
kV
V ESD (G-D) G ate-Drain ESD (HBM - C= 100pF, R=1.5 kΩ)
4
kV
V ESD ( D-S) Drain-Source ESD (HBM - C= 100pF, R=1.5 kΩ)
4
Ts tg
Tj
kV
Storage Temperature
-65 to 175
o
Max. Operating Junction Temperature
-40 to 175
o
(•) Pulse width limited by safe operating area
December 1999
C
C
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
STP80NS04Z
THERMAL DATA
R thj -case
R thj -case
R thj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-case
Typ
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
o
0.94
0.65
62.5
0.5
300
C/W
C/W
o
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
80
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 30 V)
500
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
Parameter
VCLAMP
Drain-Gate Breakdown
Voltage
Test Con ditions
I D = 1 mA V GS = 0
-40 < Tj < 175 o C
I DSS
V DS = 16 V
Zero Gate Voltage
Drain Current (V GS = 0)
IGSS
Gate-body Leakage
Current (VDS = 0)
V GS = ± 10 V
V GS = ± 16 V
V GSS
Gate-Source
Breakdown Voltage
I G = 100 µA
Min.
Typ.
Max.
33
Unit
V
T j = 175 o C
50
µA
T j = 175 oC
o
T j = 175 C
50
150
µA
µA
18
V
ON (∗)
Symbo l
Parameter
Test Con ditions
V GS(th)
Gate Threshold Voltage V DS =V GS ID = 1 mA
-40 < Tj < 150 o C
R DS(on)
Static Drain-source On
Resistance
V GS = 10V
V GS = 16V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
Typ.
Max.
Unit
1.7
3
4.2
V
8
7.5
9
8
mΩ
mΩ
ID = 40 A
ID = 40 A
80
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/8
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =40 A
V GS = 0
Min.
Typ.
30
50
4000
1250
230
Max.
Unit
S
5400
1700
320
pF
pF
pF
STP80NS04Z
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Qg
Q gs
Q gd
Parameter
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V DD = 16 V
I D = 80 A
Min.
V GS = 10 V
Typ.
Max.
Unit
105
24
41
142
nC
nC
nC
Typ.
Max.
Unit
60
140
220
80
190
300
ns
ns
ns
Typ.
Max.
Unit
80
320
A
A
1.5
V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
V CLAMP = 30 V I D = 80 A
R G =4.7 Ω V GS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 80 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 80 A
di/dt = 100 A/µs
Tj = 150 oC
V r = 25 V
(see test circuit, figure 5)
t rr
Q rr
I RRM
Min.
V GS = 0
75
ns
0.21
µC
6
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STP80NS04Z
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STP80NS04Z
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Zero Gate Voltage Drain Current vs
Temperature
Source-drain Diode Forward Characteristics
5/8
STP80NS04Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STP80NS04Z
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/8
STP80NS04Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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8/8
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