APT50GN120B2(G)
1200V
TYPICAL PERFORMANCE CURVES
APT50GN120B2
APT50GN120B2G*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT’s
have a very short, low amplitude tail current and low Eoff. The Trench Gate design
results in superior VCE(on) performance. Easy paralleling results from very tight
parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in
gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive
design and minimizes losses.
(B2)
T-Max®
• 1200V NPT Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
10µs Short Circuit Capability
Intergrated Gate Resistor: Low EMI, High Reliability
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50GN120B2(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
8
@ TC = 25°C
UNIT
Volts
134
66
Amps
150
@ TC = 150°C
150A @ 1200V
Switching Safe Operating Area @ TJ = 150°C
543
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 400µA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
RGINT
Intergrated Gate Resistor
5.8
6.5
1.4
1.7
2.1
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V)
5
Units
Volts
1.9
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
I GES
MAX
1200
(VCE = VGE, I C = 2mA, Tj = 25°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
100
2
600
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
10-2005
V(BR)CES
MIN
Rev C
Characteristic / Test Conditions
050-7602
Symbol
APT50GN120B2(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
3600
VGE = 0V, VCE = 25V
210
f = 1 MHz
170
Gate Charge
9.5
VGE = 15V
315
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
I C = 50A
SSOA
Switching Safe Operating Area
TJ = 150°C, R G = 2.2Ω 7, VGE =
VCE = 600V
15V, L = 100µH,VCE = 1200V
Short Circuit Safe Operating Area
VCC = 960V, VGE = 15V,
TJ = 125°C, R G = 2.2Ω 7
td(on)
tr
td(off)
tf
Eon1
Eon2
Turn-on Delay Time
Turn-off Switching Energy
td(on)
Turn-on Delay Time
tr
td(off)
tf
TBD
TJ = +25°C
Inductive Switching (125°C)
28
VCC = 800V
27
VGE = 15V
395
RG = 2.2Ω 7
205
TBD
I C = 50A
Current Fall Time
44
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
µJ
3900
4495
Turn-off Delay Time
Turn-off Switching Energy
115
RG = 2.2Ω 7
Current Rise Time
Eon2
ns
320
6
Eon1
Eoff
µs
I C = 50A
Turn-on Switching Energy (Diode)
Eoff
nC
10
27
5
V
A
VGE = 15V
4
pF
150
VCC = 800V
Current Fall Time
UNIT
190
28
Turn-off Delay Time
MAX
20
Inductive Switching (25°C)
Current Rise Time
Turn-on Switching Energy
TYP
Capacitance
Qg
SCSOA
MIN
55
TJ = +125°C
ns
5660
66
µJ
6795
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.23
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
10-2005
8 Continuous current limited by package lead temperature.
050-7602
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance.
Rev C
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
15V
15V
140
80
10V
60
9V
40
8V
20
7V
0
2
4
6
8
10
12
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
IC, COLLECTOR CURRENT (A)
120
TJ = 125°C
100
TJ = 25°C
80
TJ = -55°C
60
40
20
0
0
10V
60
9V
40
8V
20
7V
0
2
4
6
8
10
12
14
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
140
11V
80
0
FIGURE 1, Output Characteristics(TJ = 25°C)
160
100
J
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 50A
C
T = 25°C
14
0
50
IC = 100A
3
2.5
IC = 50A
2
1.5
IC = 25A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
1.00
350
3
IC = 100A
2.5
2
IC = 50A
1.5
IC = 25A
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50
-25
0
25
50
75 100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
1.10
1.05
300
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.5
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
4
100 150 200 250
GATE CHARGE (nC)
160
140
120
100
80
60
Lead Temperature
Limited
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
100
12V
Rev C
11V
120
050-7602
IC, COLLECTOR CURRENT (A)
12V
120
IC, COLLECTOR CURRENT (A)
140
APT50GN120B2(G)
160
160
VGE = 15V
25
20
15
10
VCE = 800V
5 TJ = 25°C, TJ =125°C
RG = 2.2Ω
L = 100 µH
VCE = 800V
RG = 2.2Ω
L = 100 µH
300
RG = 2.2Ω, L = 100µH, VCE = 800V
100
250
80
200
60
40
TJ = 25 or 125°C,VGE = 15V
25000
G
20000
TJ = 125°C,VGE =15V
15000
10000
5000
TJ = 25°C,VGE =15V
TJ = 25°C, VGE = 15V
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
12000
G
TJ = 125°C, VGE = 15V
10000
8000
6000
4000
TJ = 25°C, VGE = 15V
2000
0
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
Eon2,100A
J
40000
30000
Eoff,100A
20000
Eon2,50A
Eon2,25A
Eoff,50A
Eoff,25A
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
22000
V
= 800V
CE
V
= +15V
GE
T = 125°C
0
100
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
150
0
0
10000
TJ = 125°C, VGE = 15V
14000
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
50000
RG = 2.2Ω, L = 100µH, VCE = 800V
50
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
100
120
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=25°C
200
0
0
10-2005
300
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
20
Rev C
VGE =15V,TJ=125°C
400
20 30 40 50 60 70 80 90 100 110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
tf, FALL TIME (ns)
tr, RISE TIME (ns)
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
30
0
050-7602
APT50GN120B2(G)
500
35
V
= 800V
CE
V
= +15V
GE
R = 2.2Ω
20000
G
18000
16000
Eon2,100A
Eoff,100A
14000
12000
10000
8000
Eon2,50A
6000
4000
Eoff,25A
2000
0
Eoff,50A
Eon2,25A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
Cies
1,000
500
140
120
100
80
60
40
C0es
20
Cres
100
APT50GN120B2(G)
160
6,000
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.9
0.20
0.7
0.15
0.5
Note:
0.10
PDM
0.3
t2
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
0.115
0.0088F
0.115
0.188F
Power
(watts)
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
FMAX, OPERATING FREQUENCY (kHz)
120
Junction
temp. (°C)
50
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 2.2Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10 20
30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0.1
Rev C
0.05
0
t1
050-7602
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
APT50GN120B2(G)
APT30DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
IC
V CC
Collector Current
V CE
90%
tr
5%
10%
5%
A
D.U.T.
CollectorVoltage
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90%
*DRIVER SAME TYPE AS D.U.T.
TJ = 125°C
Gate Voltage
A
CollectorVoltage
td(off)
V CE
90%
100uH
V CLAMP
tf
10%
Switching Energy
IC
A
0
DRIVER*
Collector Current
Figure 24, EON1 Test Circuit
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX™ (B2) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
Rev C
10-2005
4.50 (.177) Max.
050-7602
B
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
D.U.T.